78733 - SOLID STATE ELECTRONICS M

Conoscenze e abilità da conseguire

The aim of the course is to give tools for the quantum-mechanical study and interpretation of the electron transport in devices made up by molecules or molecular layers or nanostructures between metallic contacts, with a special emphasis on the current flow when a voltage is applied across the device. The course proposes theoretical models to interpret the electric conductance on the atomic scale and to describe phenomena taking place when the dimensions of the system are progressively increased. The course can be considered an introduction to the recent rapidly growing research field named Molecular Electronics.

Contenuti

Requirements/Prior knowledge

Prerequisite for the understanding of the arguments is the knowledge of the key concepts on electron devices and circuits and basic concepts of mathematics and physics acquired from earlier courses. In particular, the student should be able to analyze the behaviour of simple analog circuits using diodes, MOSFETs, BJTs or OPAMPs both in stationary and transient conditions.

Fluent spoken and written English is a necessary pre-requisite: all lectures and tutorials, and all study material will be in English.

Course contents

Course introduction: new technologies for integrated solid state sensors (Microelectronics and Micro-Electro-Mechanics Systems), definition and classification of sensors (the sensor cube by Middelhoek and Noorlag). Definition of noise signals in the time domain. The noise power spectrum. Definition of noise signals in frequency domain. Description of noise models for resistors, diodes, MOSFETs, BJTs and OPAMPs. Brief description on the absorption of radiation in a semiconductor material. Elementary optical sensors: photoresistor, photodiode (in dc and pulsed regime), MOS photocapacitor, MOS and bipolar phototransistors. Structure and operation of charge-coupled devices (CCD); linear-array and full-frame image sensors. Performance analysis of solid-state video cameras. Noise contributions to image sensors. Introduction to the elasticity theory; description of the mechanical deformation of cantilever beams and membranes; equations of the distribution of the reaction forces and moments with general loads. Piezoresistive sensors of acceleration and pressure. Piezoelectric accelerometer. Vertical and lateral capacitive accelerometers. Noise contributions in piezoresistive sensors. Introduction to the thermoelectric and thermoresistive effects. Thermal sensors: integrated thermopile sensors; semiconductor-junction temperature sensors; proportional-to-absolute-temperature sensors (PTAT). Introduction to Hall and magnetoresistance effects. Magnetic sensors: Hall plates; differential-amplification magnetic sensors (DAMS); MAGFET and dual-drain MAGFET; vertical and lateral magnetotransistors. Energy-efficient micro-hotplates for resistive and infra-red gas sensors based on SOI-CMOS/MEMS technology.

In the lab practice, a number of tools suitable for the numerical simulation of the sensors will be shown and used to illustrate the functioning principles of solid-state sensors based on silicon devices. For each sensor, the physical effect, the model used for its characterization and the technological aspects used for the overall realization will be discussed.

Testi/Bibliografia

S. M. Sze “Semiconductor Sensors” , Wiley Interscience.

S. D. Senturia "Microsystem Design", Springer, 2001, ISBN 978-1-4757-7458-0

M. Rudan, "Physics of Semiconductor Devices", Springer, Springer, 2018. ISBN 978-3-319-63153-0

Metodi didattici

The course consists of classroom lectures in which the physical effects and the models used for the characterization of the solid-state sensors are presented, the technological aspects used for the overall realization are discussed, the circuit solutions adopted to optimize the performance and the signal-to-noise answer are proposed. The theoretical presentation of the topics is followed by several laboratory activities devoted to the TCAD simulation of sensor aiming to acquire the method for analyzing and designing simple devices.

Modalità di verifica e valutazione dell'apprendimento

Learning assessment is done through a final exam that ensures acquisition of knowledge and expected skills. The student will carry out an oral test.

The oral test consists in 3 questions, one to verify the ability to analyze circuits or devices used in integrated sensors, the second covering the main theoretical instruments for the analysis of the physical properties of materials or devices suitable for the transduction effect, and a third one involving the noise analysis of the semiconductor devices and circuits. To obtain a passing grade, the student must demonstrate the capacity to manage the key concepts illustrated in the course program. The duration of the oral test is about 60 minutes.

To attend the exam it is required to register via Almaesami. Those who do not succeed to register by the deadline are required to promptly notify the problem at the Secretary's office.

Strumenti a supporto della didattica

Teaching material: slides, notes and examples of TCAD simulation setups will be available to students via the distribution list or in https://www.unibo.it/sitoweb/susanna.reggiani/contenuti-utili

Orario di ricevimento

Consulta il sito web di Susanna Reggiani