B8390 - DISPOSITIVI E CIRCUITI INTEGRATI DI POTENZA LM

Learning outcomes

At the end of the course, the student will acquire advanced knowledge of semiconductor power devices, including emerging technologies based on gallium nitride (GaN) and silicon carbide (SiC). They will be able to analyze the reliability of power transistors and identify techniques to improve their robustness and performance in practical applications. Finally, they will possess basic skills in the design and simulation of simple yet fundamental integrated power circuits using GaN technology.

Course contents

Introduction to Power Electronics

• Introduction to power electronics
• Application examples
• Types of devices and their functions

Semiconductor Power Devices

• Silicon (Si) power transistors:
  • Vertical MOSFET, Super Junction MOSFET, Laterally-Diffused MOSFET
    
  • Main characteristics (breakdown voltage, on-resistance, intrinsic capacitances) and operation
  • Typical applications: discrete vs integrated
• Silicon Carbide (SiC) power transistors:
  • Advantages and disadvantages compared to Si
  • Characteristics and operation
  • Typical applications: discrete
• Gallium Nitride (GaN) power transistors:
  • Advantages and disadvantages compared to Si and SiC
  • Depletion HEMT, Cascode, Enhancement HEMT (MISHEMT vs pGaN HEMT vs Fe-gate HEMT)
  • Characteristics and operating principles
  • Typical applications: discrete vs integrated
• Gallium Nitride (GaN) Schottky diodes:
  • Operating principle
  • Characteristics and applications

Reliability of Power Devices

• Common reliability issues in semiconductor devices
• Degradation and failure mechanisms in power transistors
• Mitigation techniques and reliability improvement
• Case studies of failures and research analysis
• Laboratory activities: experiments on semiconductor power transistors

Integrated Design in GaN

• Fundamentals of power circuits
• Introduction to integrated design
• Design of power circuits with GaN devices
• Circuits and driving techniques for GaN transistors and related challenges
• Layout techniques

Laboratory: Final Project

• Design of a GaN transistor (or half-bridge) with integrated gate driver
• Simulation of the project using EDA tools for integrated circuits
• Performance analysis and optimization

Readings/Bibliography

[1] B. Jayant Baliga, "Fundamentals of Power Semiconductor Devices", Springer New York, NY, ISBN978-1-4899-7765-6.

[2] Bernhard Wicht, "Design of Power Management Integrated Circuits", Wiley-IEEE Press, ISBN: 9781119123064.

[3] M. P. Kaufmann. B. Wicht, "Monolithic Integration in E-Mode GaN Technology", Springer Cham, ISBN978-3-031-15627-4.

Teaching methods

The course will be mainly structured through theoretical classroom lectures (65%) and practical laboratory exercises (35%).

NOTE: In order to attend the laboratory activities, all students must have completed the safety and health training course for study environments, specifically modules 1 and 2, in e-learning mode [https://www.unibo.it/it/servizi-e-opportunita/salute-e-assistenza/salute-e-sicurezza/sicurezza-e-salute-nei-luoghi-di-studio-e-tirocinio].

Assessment methods

The final assessment includes the completion of a project and an oral exam. The latter consists of a series of questions aimed at verifying the knowledge of the topics covered in lectures and laboratory exercises, as well as the design aspects.

Teaching tools

Slides are made available on virtuale.unibo.it as support materials for the lessons conducted on the blackboard.

Office hours

See the website of Andrea Natale Tallarico