S. Pandey; D. Cavalcoli; B. Fraboni; A.Cavallini, Surface photovoltage spectroscopy
characterization of Al1-xInxN/AlN/GaN heterostructures, «PHYSICA STATUS SOLIDI. C», 2012, 9, pp. 693 - 696 [Scientific article]
A. Minj; D.Cavalcoli; A.Cavallini, Thermionic emission from the 2DEG assisted by image-charge-induced barrier lowering in AlInN/AlN/GaN heterostructures, «NANOTECHNOLOGY», 2012, 23, pp. 115701 - 115707 [Scientific article]
F. Fabbri; D.Cavalcoli; A. Cavallini, 4H-SiC band structure investigated by surface
photovoltage spectroscopy, «ACTA MATERIALIA», 2012, 60, pp. 3350 - 3354 [Scientific article]
D.Cavalcoli; S. Pandey; B. Fraboni; A. Cavallini, Band gap shift in Al1−xInxN/AlN/GaN heterostructures studied by surface photovoltage spectroscopy, «APPLIED PHYSICS LETTERS», 2011, 98, pp. 142111 - 142114 [Scientific article]
A. Minj; D. Cavalcoli ; A. Cavallini, Defect investigation in Al0.87In0.13N/AlN/GaN heterostructures
by scanning force microscopy methods, «JOURNAL OF PHYSICS. CONFERENCE SERIES», 2011, 326, pp. 012011 - 012017 [Scientific article]
D. Cavalcoli; M. Rossi; A.Cavallini, Defect States in nc-Si:H investigated by surface photovoltage spectroscopy, «JOURNAL OF APPLIED PHYSICS», 2011, 109, pp. 053719 - 053725 [Scientific article]
S. Pandey; B Fraboni; D.Cavalcoli; A. Minj; A.Cavallini, Two-dimensional electron gas properties by current-voltage analyses of Al0.86In0.14N/AlN/GaN heterostructures, «APPLIED PHYSICS LETTERS», 2011, 99, pp. 012111 - 012114 [Scientific article]
A. Minj; D. Cavalcoli; A. Cavallini, Conduction Mechanisms in Al0.84In0.16N/AlN/GaN investigated at the nanoscale, in: Book of Abstract of the 10th International Workshop on Beam Injection Assessment
of Microstructures in Semiconductors - BIAMS 2010, s.l, s.n, 2010, pp. 2 - 3 (atti di: 10th International Workshop on Beam Injection Assessment
of Microstructures in Semiconductors - BIAMS 2010, Halle, Germany, 4-8 luglio 2010) [Abstract]
A. Cavallini; D. Cavalcoli; G. Micard; B.Thereiden; G. Hahn, Conduction Mechanisms in Hydrogenated Nanocrystalline Silicon, in: E-MRS Spring meeting, Symp I: Advanced silicon materials research for electronic and photovoltaic applications II, s.l, s.n, 2010, pp. 4 - 4 (atti di: E-MRS Spring meeting, Symp I: Advanced silicon materials research for electronic and photovoltaic applications II, Starsbourg, 7-11.06.2010) [Abstract]
G. Micard;G. Hahn; B. Terheiden; D. Chrastina; G.Isella;T. Moiseev; D. Cavalcoli; A. Cavallini; S. Binetti; M. Acciarri; A. Le Donne; M. Texier; B. Pichaud, Electrical and structural properties of p-type nanocrystalline silicon grown by LEPECVD for photovoltaic applications, «PHYSICA STATUS SOLIDI. C», 2010, 1, pp. 1 - 4 [Scientific article]
D. Cavalcoli; A. Cavallini, Electronic properties of Hydrogenated nanocrystalline Silicon for Photovoltaic Applications, in: E-MRS Fall meeting 2010 C: Materials, devices and economics issues for tomorrow's photovoltaics, s.l, s.n, 2010, pp. 16 - 16 (atti di: Fall 2010 C: Materials, devices and economics issues for tomorrow's photovoltaics, Varsavia, 13-17 sept 2010) [Abstract]
A Minj; D.Cavalcoli; A.Cavallini, Indium segregation in AlInN/AlN/GaN heterostructures, «APPLIED PHYSICS LETTERS», 2010, 97, pp. 132114 - 132117 [Scientific article]
D. Cavalcoli; A. Minj; A. Cavallini, Nano-scale Electrical Characterization of advanced semiconductors, in: E-MRS Fall 2010 D: Multidimensional electrical and chemical characterization, s.l, s.n, 2010, pp. 26 - 26 (atti di: E-MRS Fall 2010 D: Multidimensional electrical and chemical characterization, Varsavia, 13-17 sept 2010) [Abstract]
D. Cavalcoli; A. Cavallini, Surface Photovoltage Spectroscopy. Method and Applications., «PHYSICA STATUS SOLIDI. C, CURRENT TOPICS IN SOLID STATE PHYSICS», 2010, 7, pp. 1293 - 1300 [Scientific article]
D Cavalcoli; A Cavallini, Surface Photovoltage Spectroscopy of Semiconductor Nanostructures, in: Program and Abstract 10th International Workshop on Beam Injection Assessment of Microstructures in Semiconductors, s.l, s.n, 2010, pp. o19 - o19 (atti di: 10th International Workshop on Beam Injection Assessment of Microstructures in Semiconductors, Halle, Germany, 4-8 July 2010) [Abstract]
