Foto del docente

Daniela Cavalcoli

Associate Professor

Department of Physics and Astronomy "Augusto Righi"

Academic discipline: FIS/03 Physics of Matter

Delegate for Mobility of teachers, Students and Professional Staff

Publications

M.A. Fazio; M. Perani; N. Brinkmann; B. Terheiden; D. Cavalcoli, Electrical characterization at the nanoscale of Si-based thin films for photovoltaic applications, in: Electrical characterization at the nanoscale of Si-based thin films for photovoltaic applications, 2016, pp. 1 - 1 (atti di: BIAMS 2016 - Beam Injection Assessment of Microstructures in Semiconductors, Versailles, Francia, 5-9 giugno 2016) [Abstract]

Ruolo editoriale nella rivista «Material Science in Semiconductor Processing»

Perani, Martina; Carapezzi, Stefania; Mutta, Geeta Rani; Cavalcoli, Daniela, Nanostructured surfaces investigated by quantitative morphological studies, «NANOTECHNOLOGY», 2016, 27, Article number: 185703 , pp. 185703 - 185711 [Scientific article]

Cavalcoli, Daniela; Cros, Ana; Rigutti, Lorenzo, Preface of the Special Issue: Special Issue: III-Nitride Nanostructures Preface, in: Cavalcoli, Daniela, Special Issue: III-Nitride Nanostructures, Amsterdam, Elsevier, 2016, pp. 1 - 1 [Preface]

Pomaska, Manuel; Mock, Jan; Köhler, Florian; Zastrow, Uwe; Perani, Martina; Astakhov, Oleksandr; Cavalcoli, Daniela; Carius, Reinhard; Finger, Friedhelm; Ding, Kaining, Role of oxygen and nitrogen in n-type microcrystalline silicon carbide grown by hot wire chemical vapor deposition, «JOURNAL OF APPLIED PHYSICS», 2016, 120, pp. 225105 - 225105 [Scientific article]

Minj, A; Skuridina, D.; Cavalcoli, D.; Cros, A.; Vogt, P.; Kneissl, M.; Giesen, C.; Heuken, M., Surface properties of AlInGaN/GaN heterostructure, «MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING», 2016, 55, pp. 26 - 31 [Scientific article]

Albert Minj;Daniela Cavalcoli;Geeta Rani Mutta Popuri;Arantxa Vilalta-Clemente;Pierre Ruterana;Anna Cavallini, Electrical properties of extended defects in III-nitrides, «ACTA MATERIALIA», 2015, 89, Article number: http://www.sciencedirect.com/science/article/pii/S , pp. 290 - 297 [Scientific article]

M. Perani;D. Cavalcoli;M. Canino;M. Allegrezza;M. Bellettato;C. Summonte, Electrical properties of silicon carbide/silicon rich carbide multilayers for photovoltaic applications, «SOLAR ENERGY MATERIALS AND SOLAR CELLS», 2015, 135, pp. 29 - 34 [Scientific article]

Perani, M.; Brinkmann, N.; Hammud, A.; Cavalcoli, D.; Terheiden, B., Nanocrystal formation in silicon oxy-nitride films for photovoltaic applications: Optical and electrical properties, «JOURNAL OF PHYSICAL CHEMISTRY. C», 2015, 119, pp. 13907 - 13914 [Scientific article]

Cavalcoli, D.; Impellizzeri, G.; Romano, L.; Miritello, M.; Grimaldi, M.G.; Fraboni, B., Optical Properties of Nanoporous Germanium Thin Films, «ACS APPLIED MATERIALS & INTERFACES», 2015, 7, pp. 16992 - 16998 [Scientific article]

Daniela, Cavalcoli; Beatrice, Fraboni; Anna, Cavallini, Surface and Defect States in Semiconductors Investigated by Surface PhotovoltageDefects in Semiconductors, «SEMICONDUCTORS AND SEMIMETALS», 2015, 91, pp. 251 - 278 [Scientific article]

D. Cavalcoli;A. Minj;S. Pandey;A. Cavallini, Electrical properties of dislocations in III-Nitrides, in: AIP Conference Proceedings, AIP Publishing, 2014, pp. 301 - 304 (atti di: NTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS 2013, Bologna, Italy, 21–26 July 2013) [Contribution to conference proceedings]

M. Perani; D. Cavalcoli; M. Canino; M. Allegrezza; M. Bellettato; C. Summonte, Electrical properties of silicon nanodots embedded in a SiC matrix for photovoltaic applications, in: Microscopie, 2014, pp. 33 - 34 (atti di: Science through Scanning Probe Microscopy 2013 - StSPM'13, Bologna, Dicembre 2013) [Contribution to conference proceedings]

G. Naresh-Kumar;A. Vilalta-Clemente;S. Pandey;D. Skuridina;H. Behmenburg;P. Gamarra;G. Patriarche;I. Vickridge;M. A. di Forte-Poisson;P. Vogt;M. Kneissl;M. Morales;P. Ruterana;A. Cavallini;D. Cavalcoli;C. Giesen;M. Heuken;C. Trager-Cowan, Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistors, «AIP ADVANCES», 2014, 4, Article number: 127101 , pp. 127101 - 127113 [Scientific article]

D. Cavalcoli;B. Fraboni;G. Impellizzeri;L. Romano;E. Scavetta;M.G. Grimaldi, Optoelectronic properties of nanoporous Ge layers investigated by surface photovoltage spectroscopy, «MICROPOROUS AND MESOPOROUS MATERIALS», 2014, 196, pp. 175 - 178 [Scientific article]