Daniela Cavalcoli

A.Castaldini, D.Cavalcoli and A.Cavallini: "Processing Effects on the Electrical Properties of Defects in Silicon" Material Science and Engineering B4 (1989), p. 343- 346.

A.Castaldini, D.Cavalcoli and A.Cavallini: "Electronic States in Plastically Deformed Silicon" Solid State Phenomena 47-48, Sci. Tec. Publ. (1989) p. 211-220.

D. Cavalcoli, A.Cavallini and A.Castaldini: "Determination of Minority Carrier Diffusion Length by Integral Properties of Electron Beam Induced Current Profiles" J. Appl. Phys., 70 (4) (1991). 2163-2168.

A.Castaldini, D.Cavalcoli and A. Cavallini: "Investigation of Electrical Contacts on n- type Si" Solid State Phenomena 19-20, Sci-Tec.Publ. (1991) 529-534.

A.Cavallini, B.Fraboni and D.Cavalcoli: "Evaluation of Diffusion Length and Surface Recombination Velocity in Semiconductor Devices by the Method of Moments" J. Appl. Phys. 71 (12), (1992) 5964.

D.Cavalcoli, A.Cavallini, E.Gombia and M.Reiche: "Properties of Dislocations and Point Defects in Fz-Si” Solid State Phenomena Scitec Publ. 32-33 (1993) 319 -324.

D.Cavalcoli and A.Cavallini: "Evaluation of Diffusion Length at Different Excess Carrier Concentration" Mat Sci and Engineering B24 (1994), 98-100.

D.Cavalcoli, A.Cavallini and B.Fraboni: "The Injection Dose Effects on the Evaluation of Bulk and Surface Parameters in Semiconductors" Philosophical Magazine B, 70 (5) (1994), 1095-1110.

D.Cavalcoli, G.Matteucci and M.Muccini: "Simulation of electron holographic contour maps of linear charged dislocations" Ultramicroscopy, 57 (1995) 385-390.

D.Cavalcoli, A.Cavallini, C.Capperdoni, D.Palmeri and G. Martinelli: "On the Electrical Activity of First and Second Order Twin Boundaries in Silicon" Semicond. Sci. and Technol. 10 (1995) 660-665.

A.Castaldini, D.Cavalcoli, A.Cavallini, G.Martinelli, D.Palmeri, A.Parisini and G. Sartori: "Analysis of ∑ =3 and ∑= 9 Twin Boundaries in Three - Crystal Silicon Ingots" Solid State Phenomena 47-48 Scitec Pubblications (1995) 455-460

D.Cavalcoli, A.Cavallini and E. Gombia “Defect states in plastically deformed n-type silicon”. Phys. Rev. B 56 (16) (1997) 10208.

D.Cavalcoli, A.Cavallini and E. Gombia "Anomalous temperature dependence of deep level transient spectroscopy peak amplitude" Phys. Rev. B 56 (23) (1997) 14890-14892.

D.Cavalcoli, A.Cavallini and E. Gombia "Energy Levels Associated with extended defects in plastically deformed n-type Silicon" J. Phys III France 7 (1997) 1399- 1409.

D.Cavalcoli, A.Cavallini and E. Gombia "Thermal behaviour of deep levels at dislocations in n-type silicon" J. Phys. III France 7 (1997) 2361-2366.

A.Castaldini, D Cavalcoli and A.Cavallini; "Degradation Effects at Aluminum- Silicon Schottky Diodes" Electrochem. Solid-State Lett. 1, 83 (1998).

A.Castaldini, D.Cavalcoli, A. Cavallini, S Pizzini, and E.Susi “Electrical Characterization of As-grown and Thermally treated 8” Silicon Wafers” Solid State Phenomena 69-70 (1999) 143-148.

Castaldini A., D.Cavalcoli, A.Cavallini “Determination of bulk and surface transport properties by photocurrent spectral measurements” Appl. Physics A 71, 305-310, (2000).

Susi E, Castaldini A., Cavalcoli D., and Cavallini A. “Surface Damage in Silicon Substrates after the SiCl4 Dry etch of a Poly-Si film Journal of the Electrochemical Society 148 (3) G150-155 (2001).

E.Susi, A.Castaldini, D.Cavalcoli, A.Cavallini D.Jones V.Palermo, and M.Cocchi: “Electrical and structural properties of processed silicon surfaces” in Recent Res. Devel. in Vacuum Sci. and Tech., Trans. Res. Network 3 (2001):189-2001

Castaldini A., D.Cavalcoli, A.Cavallini, T Minarelli and E. Susi. “Characterisation of surface and near surface region in High Purity Cz Si” Sol State Phenomena Vols 82-84 (2002) pp 747-752.

A.Castaldini, D.Cavalcoli, A.Cavallini and M.Rossi “Surface analyses of polycristalline and Cz Si wafers”, Solar Energy Materials & Solar Cells Vol 72 issues 1-4 pp 561-571 (2002)