Foto del docente

Daniela Cavalcoli

Associate Professor

Department of Physics and Astronomy "Augusto Righi"

Academic discipline: FIS/03 Physics of Matter

Delegate for Mobility of teachers, Students and Professional Staff


vai alle Pubblicazioni

Publications prior to 2004

  1. A.Mittiga, M.Capizzi, C.Coluzza, A.Frova, V.Parisi, D.Cavalcoli, L.Moro, M. Prudenziati. "Oblique Grain Boundaries: Analysis of LBIC and EBIC Profiles" J. Appl. Phys. 63 (9) (1988), p. 4748.

  2. A.Castaldini, D.Cavalcoli and A.Cavallini: "Processing Effects on the Electrical Properties of Defects in Silicon" Material Science and Engineering B4 (1989), p. 343- 346.

  3. A.Castaldini, D.Cavalcoli and A.Cavallini: "Electronic States in Plastically Deformed Silicon" Solid State Phenomena 47-48, Sci. Tec. Publ. (1989) p. 211-220.

  4. D. Cavalcoli, A.Cavallini and A.Castaldini: "Determination of Minority Carrier Diffusion Length by Integral Properties of Electron Beam Induced Current Profiles" J. Appl. Phys., 70 (4) (1991). 2163-2168.

  5. A.Castaldini, D.Cavalcoli and A. Cavallini: "Investigation of Electrical Contacts on n- type Si" Solid State Phenomena 19-20, Sci-Tec.Publ. (1991) 529-534.

  6. A.Cavallini, B.Fraboni and D.Cavalcoli: "Evaluation of Diffusion Length and Surface Recombination Velocity in Semiconductor Devices by the Method of Moments" J. Appl. Phys. 71 (12), (1992) 5964.

  7. D.Cavalcoli, A.Cavallini, E.Gombia and M.Reiche: "Properties of Dislocations and Point Defects in Fz-Si” Solid State Phenomena Scitec Publ. 32-33 (1993) 319 -324.

  8. D.Cavalcoli and A.Cavallini: "Evaluation of Diffusion Length at Different Excess Carrier Concentration" Mat Sci and Engineering B24 (1994), 98-100.

  9. D.Cavalcoli, A.Cavallini and B.Fraboni: "The Injection Dose Effects on the Evaluation of Bulk and Surface Parameters in Semiconductors" Philosophical Magazine B, 70 (5) (1994), 1095-1110.

  10. D.Cavalcoli, G.Matteucci and M.Muccini: "Simulation of electron holographic contour maps of linear charged dislocations" Ultramicroscopy, 57 (1995) 385-390.

  11. D.Cavalcoli, A.Cavallini, C.Capperdoni, D.Palmeri and G. Martinelli: "On the Electrical Activity of First and Second Order Twin Boundaries in Silicon" Semicond. Sci. and Technol. 10 (1995) 660-665.

  12. A.Castaldini, D.Cavalcoli, A.Cavallini, G.Martinelli, D.Palmeri, A.Parisini and G. Sartori: "Analysis of ∑ =3 and ∑= 9 Twin Boundaries in Three - Crystal Silicon Ingots" Solid State Phenomena 47-48 Scitec Pubblications (1995) 455-460

  13. D.Cavalcoli, A.Cavallini and E. Gombia “Defect states in plastically deformed n-type silicon”. Phys. Rev. B 56 (16) (1997) 10208.

  14. D.Cavalcoli, A.Cavallini and E. Gombia "Anomalous temperature dependence of deep level transient spectroscopy peak amplitude" Phys. Rev. B 56 (23) (1997) 14890-14892.

  15. D.Cavalcoli, A.Cavallini and E. Gombia "Energy Levels Associated with extended defects in plastically deformed n-type Silicon" J. Phys III France 7 (1997) 1399- 1409.

  16. D.Cavalcoli, A.Cavallini and E. Gombia "Thermal behaviour of deep levels at dislocations in n-type silicon" J. Phys. III France 7 (1997) 2361-2366.

  17. A.Castaldini, D Cavalcoli and A.Cavallini; "Degradation Effects at Aluminum- Silicon Schottky Diodes" Electrochem. Solid-State Lett. 1, 83 (1998).

  18. A.Castaldini, D.Cavalcoli, A. Cavallini, S Pizzini, and E.Susi “Electrical Characterization of As-grown and Thermally treated 8” Silicon Wafers” Solid State Phenomena 69-70 (1999) 143-148.

  19. Castaldini A., D.Cavalcoli, A.Cavallini “Determination of bulk and surface transport properties by photocurrent spectral measurements” Appl. Physics A 71, 305-310, (2000).

  20. Susi E, Castaldini A., Cavalcoli D., and Cavallini A. “Surface Damage in Silicon Substrates after the SiCl4 Dry etch of a Poly-Si film Journal of the Electrochemical Society 148 (3) G150-155 (2001).

  21. E.Susi, A.Castaldini, D.Cavalcoli, A.Cavallini D.Jones V.Palermo, and M.Cocchi: “Electrical and structural properties of processed silicon surfaces” in Recent Res. Devel. in Vacuum Sci. and Tech., Trans. Res. Network 3 (2001):189-2001

  22. Castaldini A., D.Cavalcoli, A.Cavallini, T Minarelli and E. Susi. “Characterisation of surface and near surface region in High Purity Cz Si” Sol State Phenomena Vols 82-84 (2002) pp 747-752.

  23. A.Castaldini, D.Cavalcoli, A.Cavallini and M.Rossi “Surface analyses of polycristalline and Cz Si wafers”, Solar Energy Materials & Solar Cells Vol 72 issues 1-4 pp 561-571 (2002)

  24. A.Castaldini, D.Cavalcoli, A.Cavallini and M.Rossi “Surface Photovoltage analysis of crystalline silicon for photovoltaic applications”, Solar Energy Materials & Solar Cells, Vol 72 issues 1-4 pp 427-434 (2002).

  25. A.Castaldini, D.Cavalcoli, A.Cavallini and M.Rossi. “Scanning Kelvin Probe and Surface Photovoltage Analysis of Multicrystalline Silicon” Mat Sci and Eng B, 2002, Vol. 91-92 pp. 234-238.

  26. A. Castaldini, D. Cavalcoli, A. Cavallini, E. Susi: “Hydrogen-induced boron passivation in CzSi” Appl Phys A 75 (2002) 5, 601-605.

  27. A. Castaldini, D. Cavalcoli, A. Cavallini, D. Jones, V. Palermo, and E. Susi “Surface modifications in Si after RTA” Journal of the Electrochemical Society, 149 (12) (2002) G633-637.

  28. D. Cavalcoli, A.Cavallini, M.Rossi, S.Binetti, F.Izzia and S.Pizzini “Surface Contaminant Detection in Semiconductors Using Non-Contacting Techniques” Journal of The Electrochemical Society, 150 G456-G460 (2003).

  29. D.Cavalcoli, A.Cavallini, M.Rossi and K Peter “Minority Carrier Diffusion Lengths in Multi-crystalline Silicon Wafers and Solar Cells”:Solid State Phenomena, Vol. 95- 96, p.205 (2003).