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Daniela Cavalcoli

Professoressa associata

Dipartimento di Fisica e Astronomia "Augusto Righi"

Settore scientifico disciplinare: FIS/03 FISICA DELLA MATERIA

Delegata per la mobilità di Docenti, Studenti e Personale Tecnico Amministrativo

Pubblicazioni

vai alle Pubblicazioni

Pubblicazioni antecedenti il 2004

  1. A.Mittiga, M.Capizzi, C.Coluzza, A.Frova, V.Parisi, D.Cavalcoli, L.Moro, M. Prudenziati. "Oblique Grain Boundaries: Analysis of LBIC and EBIC Profiles" J. Appl. Phys. 63 (9) (1988), p. 4748.

  2. A.Castaldini, D.Cavalcoli and A.Cavallini: "Processing Effects on the Electrical Properties of Defects in Silicon" Material Science and Engineering B4 (1989), p. 343- 346.

  3. A.Castaldini, D.Cavalcoli and A.Cavallini: "Electronic States in Plastically Deformed Silicon" Solid State Phenomena 47-48, Sci. Tec. Publ. (1989) p. 211-220.

  4. D. Cavalcoli, A.Cavallini and A.Castaldini: "Determination of Minority Carrier Diffusion Length by Integral Properties of Electron Beam Induced Current Profiles" J. Appl. Phys., 70 (4) (1991). 2163-2168.

  5. A.Castaldini, D.Cavalcoli and A. Cavallini: "Investigation of Electrical Contacts on n- type Si" Solid State Phenomena 19-20, Sci-Tec.Publ. (1991) 529-534.

  6. A.Cavallini, B.Fraboni and D.Cavalcoli: "Evaluation of Diffusion Length and Surface Recombination Velocity in Semiconductor Devices by the Method of Moments" J. Appl. Phys. 71 (12), (1992) 5964.

  7. D.Cavalcoli, A.Cavallini, E.Gombia and M.Reiche: "Properties of Dislocations and Point Defects in Fz-Si” Solid State Phenomena Scitec Publ. 32-33 (1993) 319 -324.

  8. D.Cavalcoli and A.Cavallini: "Evaluation of Diffusion Length at Different Excess Carrier Concentration" Mat Sci and Engineering B24 (1994), 98-100.

  9. D.Cavalcoli, A.Cavallini and B.Fraboni: "The Injection Dose Effects on the Evaluation of Bulk and Surface Parameters in Semiconductors" Philosophical Magazine B, 70 (5) (1994), 1095-1110.

  10. D.Cavalcoli, G.Matteucci and M.Muccini: "Simulation of electron holographic contour maps of linear charged dislocations" Ultramicroscopy, 57 (1995) 385-390.

  11. D.Cavalcoli, A.Cavallini, C.Capperdoni, D.Palmeri and G. Martinelli: "On the Electrical Activity of First and Second Order Twin Boundaries in Silicon" Semicond. Sci. and Technol. 10 (1995) 660-665.

  12. A.Castaldini, D.Cavalcoli, A.Cavallini, G.Martinelli, D.Palmeri, A.Parisini and G. Sartori: "Analysis of ∑ =3 and ∑= 9 Twin Boundaries in Three - Crystal Silicon Ingots" Solid State Phenomena 47-48 Scitec Pubblications (1995) 455-460

  13. D.Cavalcoli, A.Cavallini and E. Gombia “Defect states in plastically deformed n-type silicon”. Phys. Rev. B 56 (16) (1997) 10208.

  14. D.Cavalcoli, A.Cavallini and E. Gombia "Anomalous temperature dependence of deep level transient spectroscopy peak amplitude" Phys. Rev. B 56 (23) (1997) 14890-14892.

  15. D.Cavalcoli, A.Cavallini and E. Gombia "Energy Levels Associated with extended defects in plastically deformed n-type Silicon" J. Phys III France 7 (1997) 1399- 1409.

  16. D.Cavalcoli, A.Cavallini and E. Gombia "Thermal behaviour of deep levels at dislocations in n-type silicon" J. Phys. III France 7 (1997) 2361-2366.

  17. A.Castaldini, D Cavalcoli and A.Cavallini; "Degradation Effects at Aluminum- Silicon Schottky Diodes" Electrochem. Solid-State Lett. 1, 83 (1998).

  18. A.Castaldini, D.Cavalcoli, A. Cavallini, S Pizzini, and E.Susi “Electrical Characterization of As-grown and Thermally treated 8” Silicon Wafers” Solid State Phenomena 69-70 (1999) 143-148.

  19. Castaldini A., D.Cavalcoli, A.Cavallini “Determination of bulk and surface transport properties by photocurrent spectral measurements” Appl. Physics A 71, 305-310, (2000).

  20. Susi E, Castaldini A., Cavalcoli D., and Cavallini A. “Surface Damage in Silicon Substrates after the SiCl4 Dry etch of a Poly-Si film Journal of the Electrochemical Society 148 (3) G150-155 (2001).

  21. E.Susi, A.Castaldini, D.Cavalcoli, A.Cavallini D.Jones V.Palermo, and M.Cocchi: “Electrical and structural properties of processed silicon surfaces” in Recent Res. Devel. in Vacuum Sci. and Tech., Trans. Res. Network 3 (2001):189-2001

  22. Castaldini A., D.Cavalcoli, A.Cavallini, T Minarelli and E. Susi. “Characterisation of surface and near surface region in High Purity Cz Si” Sol State Phenomena Vols 82-84 (2002) pp 747-752.

  23. A.Castaldini, D.Cavalcoli, A.Cavallini and M.Rossi “Surface analyses of polycristalline and Cz Si wafers”, Solar Energy Materials & Solar Cells Vol 72 issues 1-4 pp 561-571 (2002)

  24. A.Castaldini, D.Cavalcoli, A.Cavallini and M.Rossi “Surface Photovoltage analysis of crystalline silicon for photovoltaic applications”, Solar Energy Materials & Solar Cells, Vol 72 issues 1-4 pp 427-434 (2002).

  25. A.Castaldini, D.Cavalcoli, A.Cavallini and M.Rossi. “Scanning Kelvin Probe and Surface Photovoltage Analysis of Multicrystalline Silicon” Mat Sci and Eng B, 2002, Vol. 91-92 pp. 234-238.

  26. A. Castaldini, D. Cavalcoli, A. Cavallini, E. Susi: “Hydrogen-induced boron passivation in CzSi” Appl Phys A 75 (2002) 5, 601-605.

  27. A. Castaldini, D. Cavalcoli, A. Cavallini, D. Jones, V. Palermo, and E. Susi “Surface modifications in Si after RTA” Journal of the Electrochemical Society, 149 (12) (2002) G633-637.

  28. D. Cavalcoli, A.Cavallini, M.Rossi, S.Binetti, F.Izzia and S.Pizzini “Surface Contaminant Detection in Semiconductors Using Non-Contacting Techniques” Journal of The Electrochemical Society, 150 G456-G460 (2003).

  29. D.Cavalcoli, A.Cavallini, M.Rossi and K Peter “Minority Carrier Diffusion Lengths in Multi-crystalline Silicon Wafers and Solar Cells”:Solid State Phenomena, Vol. 95- 96, p.205 (2003).


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