Foto del docente

Daniela Cavalcoli

Associate Professor

Department of Physics and Astronomy "Augusto Righi"

Academic discipline: FIS/03 Physics of Matter

Publications

D. Cavalcoli; M. Rossi.; A. Tomasi; A.Cavallini, Degeneracy and instability of nanocontacts between conductive tips and hydrogenated nanocrystalline Si surfaces in conductive atomic force microscopy, «NANOTECHNOLOGY», 2009, 20, pp. 045702 - 045708 [Scientific article]

B. Fraboni; D. Cavalcoli; A. Cavallini; P. Fochuk, Electrical activity of deep traps in high resistivity CdTe: Spectroscopic characterization, «JOURNAL OF APPLIED PHYSICS», 2009, 105, pp. 73705 - 073705-6 [Scientific article]

A. Cavallini; D. Cavalcoli, Nanostructures in Silicon Investigated by Atomic Force Microscopy and Surface Photovoltage Spectroscopy, «SCANNING», 2008, 30 Issue: 4, pp. 358 - 363 [Scientific article]

A.S. Asha; M. Canino; C. Summonte; S. Binetti; M. Acciarri; J. Libal; D.Cavalcoli; A. Cavallini, Proceedings of the 23rd European Photovoltaic Solar Energy Conference and Exhibition, Valencia, 2008, in: H. A. OSSENBRINK, Proceedings of the 23rd European Photovoltaic Solar Energy Conference, MUNICH, DRIP, 2008, pp. 2DV1-30 - 2DV1-30 (atti di: 23rd European Photovoltaic Solar Energy Conference, Valencia, Spain, 1.5 Sept 2008) [Contribution to conference proceedings]

D Cavalcoli; B Fraboni; A Cavallini, Surface Photovoltage Spectroscopy Analyses of Cd1-x ZnxTe, «JOURNAL OF APPLIED PHYSICS», 2008, 103 (5), pp. 043713 - 043719 [Scientific article]

A. Cavallini; D. Cavalcoli; M. Rossi; A. Tomasi; S. Pizzini; D. Chrastina; G. Isella, Defect analysis of hydrogenated nanocrystalline Si thin films, «PHYSICA. B, CONDENSED MATTER», 2007, 401-402, pp. 519 - 522 [Scientific article]

D. Cavalcoli; A. Cavallini, Electronic states related to dislocations in silicon, «PHYSICA STATUS SOLIDI. C», 2007, 4, Article number: 72959 , pp. 2871 - 2877 [Scientific article]

A Cavallini; D Cavalcoli; M Rossi; A Tomasi; B Pichaud; M Texier; A Le Donne; S Pizzini; D Chrastina; G Isella, Hydrogenated nanocrystalline silicon investigated by conductive atomic force microscopy, in: A. G. CULLIS, P.A. MIGDLEY, Proceedings of the Conference Microscopy of Semiconducting Materials 2007, OXFORD, IOP, 2007, pp. 301 - 304 (atti di: Microscopy of Semiconducting Materials XV, Churchill College, Cambridge, UK, 2 – 5 April 2007) [Contribution to conference proceedings]

D.Cavalcoli;M.Rossi; A. Tomasi; A.Cavallini;D.Chrastina; G.Isella, Hydrogenated nanocrystalline silicon thin films studied by scanning force microscopy., «DIFFUSION AND DEFECT DATA, SOLID STATE DATA. PART B, SOLID STATE PHENOMENA», 2007, 131-133, pp. 547 - 552 [Scientific article]

D. Cavalcoli; A.Castaldini; A. Cavallini, Interaction between oxygen and dislocations in p-type silicon, «APPLIED PHYSICS. A, MATERIALS SCIENCE & PROCESSING», 2007, 90, pp. 619 - 622 [Scientific article]

D.Cavalcoli; A.Cavallini; M. Rossi; A.Tomasi; G Isella; and D. Chrastina, OPTICAL AND ELECTRICAL CHARACTERIZATION OF HYDROGENATED NANOCRYSTALLINE SILICON FILMS, in: Twenty second European Photovoltaic Solar Energy Conference Proceedings of the International Conference held in Milan , Italy 3 - 7 September 2007, MUNCHEN, WIP, 2007, 1, pp. 2219 - 2221 (atti di: Twenty second European Photovoltaic Solar Energy Conference, Milano, Italy, 3 - 7 September 2007) [Contribution to conference proceedings]

A. Cavallini; A. Castaldini; D. Cavalcoli; B. Fraboni, Photocurrent and Surface Photovoltage Spectroscopy Investigations of CdTe-Based Compounds, «IEEE TRANSACTIONS ON NUCLEAR SCIENCE», 2007, 54, pp. 1719 - 1722 [Scientific article]

M. Spurio; D. Cavalcoli; A. Cavallini; B. Fraboni; G. Sartorelli; L. Patrizii; D.Dallacasa; F.Bonoli; P. Focardi; E. Gandolfi ; D. Falchieri; G. Mandrioli; F. Casali; P. Fantazzini; B. Pecori; M.P. Morigi., Progetto lauree Scientifiche-Fisica, 2007. [Exhibition]

M Texier; M Acciarri; S Binetti; D Cavalcoli; A Cavallini; D Chrastina; G Isella; M Lancin; A Le Donne; A Tomasi; B Pichaud; S Pizzini; M Rossi, Structural Characterization of Nanocrystalline Silicon Layers Grown by LEPCVD for Optoelectronic Applications, in: PROCEEDINGS OF THE CONFERENCE MICROSCOPY OF SEMICONDUCTING MATERIALS 2007 XV, CAMBRIDGE, A. G. CULLIS, PA MIGDLEY, 2007, pp. 305 - 308 (atti di: MICROSCOPY OF SEMICONDUCTING MATERIALS XV., CHURCHILL COLLEGE, CAMBRIDGE, UK., 2 – 5 APRIL 2007) [Contribution to conference proceedings]

Coordination of a Research Project: Affidabilità e condizioni di utilizzo di Light Emitting Diodes, LED, su GaN per illuminazione a stato solido..