Foto del docente

Massimo Rudan

Emeritus Professor

Alma Mater Studiorum - Università di Bologna

Adjunct professor

Department of Industrial Engineering

Department of Electrical, Electronic, and Information Engineering "Guglielmo Marconi"


Keywords: Nanoscale silicon devices Phase-change memories Ovonic devices Numerical simulation Carbon nanotube FETs

The physical size of the solid-state devices has reached some of the fundamentals limits of the material and fabrication processes. This makes it necessary to envisage architectures and materials able to provide the technological evolution. The main candidates are the MOS architectures with two or more gates, and the carbon-nanotube devices. The first research line tackles these aspects of the technological innovation by improving and developing numerical-simulation tools. Object of the second research line is the definition of new physical models able to improve the accuracy of the numerical simulations and to develop innovative methods for device design. The third research line is devoted to the analysis of the application of nanometirc devices to the quantum-computing field, with the final objective of realizing fundamental quantum gates. The fourth research line deals with nanometric memory devices of the "ovonic" or phase-change type. Such devices, whose feasibility has been demonstrated in 2009, are presently those that better lend themself to the scalability in the nanometric region.