Foto del docente

Massimo Rudan

Professor emeritus

Alma Mater Studiorum - Università di Bologna

Adjunct professor

Department of Electrical, Electronic, and Information Engineering "Guglielmo Marconi"

Adjunct professor

Department of Electrical, Electronic, and Information Engineering "Guglielmo Marconi"

Publications

E. Gnani; A. Marchi; S. Reggiani; M. Rudan; G. Baccarani, Comparison of device performance and scaling capability of cylindrical nanowires (CNW) and carbon nanotube (CNT) transistors, in: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2006), MONTEREY, CA, s.n, 2006(atti di: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey CA, 6-8 September) [Contribution to conference proceedings]

E. Gnani; A. Marchi; S. Reggiani; M. Rudan; G. Baccarani, Comparison of device performance and scaling properties of cylindrical nanowires (CNW) and carbon nanotube (CNT) transistors, in: International Conference on the Physics of Semiconductors (ICPS-28), VIENNA, s.n, 2006, 28, pp. 338 - 338 (atti di: 28th International Conference on the Physics of Semiconductors (ICPS-28), Vienna, 24-28 July) [Abstract]

E. Gnani; S. Reggiani; M. Rudan; G. Baccarani, Design considerations and comparative investigation of ultra-thin SOI, double-gate and cylindrical nanowire FETs, in: Proceedings of the 36th European Solid-State Device Research Conference, MONTREUX, s.n, 2006, pp. 371 - 374 (atti di: European Solid-State Device Research Conference (ESSDERC 2006), Montreux, 19-21 september) [Contribution to conference proceedings]

E. Gnani; S. Reggiani; M. Rudan; G. Baccarani, Effects of band-structure modification in silicon nanowires with small diameters, in: Proceedings of the 36th European Solid-State Device Research Conference, MONTREUX, s.n, 2006, pp. 170 - 173 (atti di: 36th European Solid-State Device Research Conference (ESSDERC 2006), Montreux, 19-21 September) [Contribution to conference proceedings]

E. Gnani; S. Reggiani; M. Rudan; G. Baccarani, Effects of high-κ (HfO) gate dielectric in double-gate and cylindrical-nanowire MOSFETs scaled to the ultimate technology nodes, in: IEEE 2006 Silicon Nanoelectronics Workshop, HONOLULU, HAWAII, s.n, 2006, 11, pp. 121 - 122 (atti di: IEEE 2006 Silicon Nanoelectronics Workshop, Honolulu, Hawaii, 11-12 June 2006) [Contribution to conference proceedings]

S. Reggiani; E. Gnani; M. Rudan; G. Baccarani, Effects of the low-field mobility in single-gate and double-gate ultrathin-body MOSFETs scaled to the ultimate technology nodes, in: IEEE 2006 Silicon Nanoelectronics Workshop, HONOLULU, HAWAII, s.n, 2006, 11, pp. 33 - 34 (atti di: IEEE 2006 Silicon Nanoelectronics Workshop, Honolulu, Hawaii, 11-12 June 2006) [Contribution to conference proceedings]

S. Reggiani; E. Gnani; M. Rudan; G. Baccarani; S. Bychikhin; J. Kuzmik; D. Pogany; E. Gornik; M. Denison; N. Jensen; G. Groos and M. Stecher, Experimental investigation on carrier dynamics at the thermal breakdown, in: International Conference on the Physics of Semiconductors (ICPS-28), VIENNA, s.n, 2006, 28(atti di: 28th International Conference on the Physics of Semiconductors (ICPS-28), Vienna, 24-28 July) [Abstract]

M. Rudan; S. Reggiani; E. Gnani; G. Baccarani, Extension of the R-Sigma method to any order, in: Book of Abstracts of the 11th International Workshop on Computational Electronics (IWCE-11)., VIENNA, Vienna University of Technology, 2006, pp. 295 - 296 (atti di: IWCE-11, Vienna (Austria), 25-27 maggio 2006) [Contribution to conference proceedings]

A. Marchi; E. Gnani; S. Reggiani; M. Rudan; G. Baccarani, Investigating the performance limits of silicon-nanowire and carbon-nanotube FETs, «SOLID-STATE ELECTRONICS», 2006, 50, pp. 78 - 85 [Scientific article]

M. RUDAN, Models and Numerical Issues in the Quantum-Mechanical Approach to Nanometric Devices, in: Recent Advances in Modeling and Simulation of Semiconductor Devices (SEMIC 2006), VIENNA, Vienna University of Technology, 2006(atti di: SEMIC 2006, Vienna, February 16-17) [Contribution to conference proceedings]

M. Rudan, Models and numerical issues in the quantum-mechanical approach to nanometric devices, in: Recent Advances in Modeling and Simulation of Semiconductor Devices (SEMIC 2006)., VIENNA, Vienna University of Technology, 2006(atti di: SEMIC 2006, Vienna (Austria), 16-17 febbraio 2006) [Contribution to conference proceedings]

R. Katilius; M. Rudan, Noise as a tool for tracing effects of nonclassical correlations in a degenerate nonequilibrium electron gas, «PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS», 2006, 74, pp. 233101-1 - 233101-4 [Scientific article]

A. Marchi; S. Reggiani; M. Rudan; A. Bertoni, Numerical simulation of ballistic surface transport in cylindrical nanosystems, «JOURNAL OF COMPUTATIONAL ELECTRONICS», 2006, 5, pp. 177 - 180 [Scientific article]

M. Rudan; S. Reggiani; E. Gnani; G. Baccarani; C. Corvasce; M. Ciappa; M. Stecher; D. Pogany; E. Gornik, Physical Models for Smart-Power Devices, in: Proceedings of the 13th International Conference on Mixed Design of Integrated Circuits and Systems (MIXDESS 2006), GDYNIA, s.n, 2006, pp. 28 - 33 (atti di: 13th International Conference on Mixed Design of Integrated Circuits and Systems” (MIXDESS 2006), Gdynia, Poland, June 22-24) [Contribution to conference proceedings]

E. Gnani; A. Marchi; S. Reggiani; M. Rudan; G. Baccarani, Quantum mechanical analysis of the electrostatics in silicon nanowires and carbon nanotubes FETs, «SOLID-STATE ELECTRONICS», 2006, 50, pp. 709 - 717 [Scientific article]