Foto del docente

Massimo Rudan

Professore ordinario

Dipartimento di Ingegneria dell'Energia Elettrica e dell'Informazione "Guglielmo Marconi"

Professore a contratto a titolo gratuito

Dipartimento di Ingegneria dell'Energia Elettrica e dell'Informazione "Guglielmo Marconi"

Settore scientifico disciplinare: ING-INF/01 ELETTRONICA

Pubblicazioni

Enrico Piccinini; Andrea Cappelli; Feng Xiong; Ashkan Behnam; Fabrizio Buscemi; Rossella Brunetti; Massimo Rudan; Eric Pop; Carlo Jacoboni, Novel 3D random-network model for threshold switching of phase-change memories, in: IEDM Tech. Digest, IEEE, 2013, pp. 22.6.1 (641) - 22.6.4 (644) (atti di: International Electron Devices Meeting - IEDM, Washington DC, 9-11 Dec. 2013) [Contributo in Atti di convegno]

M. Lenzi; A. Gnudi; S. Reggiani; E. Gnani; M. Rudan; G. Baccarani, Semiclassical Transport in Silicon Nanowire FETs including Surface Roughness, «JOURNAL OF COMPUTATIONAL ELECTRONICS», 2008, 7, pp. 355 - 358 [articolo]

G. Baccarani; E. Gnani; A. Gnudi; S. Reggiani; M. Rudan, Theoretical foundations of the quantum drift-diffusion and density-gradient models, «SOLID-STATE ELECTRONICS», 2008, 52, pp. 526 - 532 [articolo]

M. Lenzi; E. Gnani; S. Reggiani; A. Gnudi; M. Rudan; G. Baccarani, A deterministic solution of the Boltzmann transport equation for a one-dimensional electron gas in silicon nanowires, in: Proceedings of the 8th International Conference on Ultimate Integration on Silicon, s.l, s.n, 2007, pp. 47 - 50 (atti di: 8th International Conference on Ultimate Integration on Silicon (ULIS 2007), Leuven, Belgium, 15-16 March, 2007) [Contributo in Atti di convegno]

E. Gnani; A. Gnudi; S. Reggiani; M. Rudan; G. Baccarani, A new solution method of the 1D open-boundary Schrödinger equation for transport in NW-FETs including band effects, in: Abstracts of the 12th International Workshop on Computational Electronics (IWCE-12), s.l, s.n, 2007, pp. 1 - 1 (atti di: 12th International Workshop on Computational Electronics (IWCE-12), Amherst, USA, 8-10 October, 2007) [Contributo in Atti di convegno]

E. Gnani; A. Gnudi; S. Reggiani; M. Rudan; G. Baccarani, Band Structure Effects on the Current-Voltage Characteristics of SNW-FETs, in: Technical Digest of the International Electron Device Meeting (IEDM 2007), s.l, s.n, 2007, pp. 101 - 104 (atti di: International Electron Device Meeting (IEDM 2007), Washington, USA, 10-12 December, 2007) [Contributo in Atti di convegno]

E.Gnani; S.Reggiani; A.Gnudi; P.Parruccini; R.Colle; M.Rudan; G.Baccarani, Band-Structure Effects in Ultrascaled Silicon Nanowires, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2007, 54, pp. 2243 - 2254 [articolo]

E. Gnani; A. Marchi; S. Reggiani; M. Rudan; G. Baccarani, Comparison of Device Performance and Scaling Properties of Cylindrical-Nanowire (CNW) and Carbon-Nanotube (CNT) Transistors, in: AIP Conference Proceedings, s.l, s.n, 2007, 893, pp. 737 - 738 (atti di: 28th International Conference on the Physics of Semiconductors - (ICPS 2006), Vienna, Austria, 24-28 July, 2006) [Contributo in Atti di convegno]

E. Gnani; S. Reggiani; M. Rudan; G. Baccarani, Effects of High-k (HfO2) Gate Dielectrics in Double-Gate and Cylindrical-Nanowire FETs Scaled to the Ultimate Technology Nodes, «IEEE TRANSACTIONS ON NANOTECHNOLOGY», 2007, 6, pp. 90 - 96 [articolo]

S. Reggiani; E. Gnani; M. Rudan; G. Baccarani; S. Bychikhin; J. Kuzmik; D. Pogany; E. Gornik; M. Denison; N. Jensen; G. Groos; M. Stecher, Experimental Investigation on Carrier Dynamics at the Thermal Breakdown, in: AIP Conference Proceedings, s.l, s.n, 2007, 893, pp. 1497 - 1498 (atti di: 28th International Conference on the Physics of Semiconductors (ICPS 2006), Vienna, Austria, 24-28 July, 2006) [Contributo in Atti di convegno]

M. Rudan; R. Katilius; S. Reggiani; E. Gnani; G. Baccarani, Impact-Ionization Coefficient in Silicon at High Fields – A Parametric Approach, in: Abstracts of the 12th International Workshop on Computational Electronics (IWCE-12), s.l, s.n, 2007, pp. 1 - 2 (atti di: 12th International Workshop on Computational Electronics (IWCE-12), Amherst, USA, 8-10 October, 2007) [Contributo in Atti di convegno]

S. Reggiani; E. Gnani; A. Gnudi; M. Rudan; G. Baccarani, Low-Field Electron Mobility Model for Ultrathin-Body SOI and Double-Gate MOSFETs with Extremely Small Silicon Thicknesses, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2007, 54, pp. 2204 - 2212 [articolo]

R. Grassi; S. Poli; S. Reggiani; A. Gnudi; M. Rudan; G. Baccarani, Phonon-scattering effects in CNT-FETs with different dimensions and dielectric materials, in: Proceedings of the 37th European Solid-State Device Research Conference (ESSDERC 2007), s.l, s.n, 2007, pp. 247 - 250 (atti di: 37th European Solid-State Device Research Conference (ESSDERC 2007), Munich, Germany, 11-13 September, 2007) [Contributo in Atti di convegno]

M. Lenzi; A. Gnudi; S. Reggiani; E. Gnani; M. Rudan; G. Baccarani, Semiclassical transport in silicon cylindrical nanowire FETs including surface roughness, in: Abstracts of the 12th International Workshop on Computational Electronics (IWCE-12), s.l, s.n, 2007, pp. 1 - 2 (atti di: 12th International Workshop on Computational Electronics (IWCE-12), Amherst, USA, 8-10 October, 2007) [Contributo in Atti di convegno]

G. Baccarani; E. Gnani; A. Gnudi; S. Reggiani; M. Rudan, Theoretical foundations of the quantum drift-diffusion and density-gradient models, in: Proceedings of the 8th International Conference on Ultimate Integration on Silicon (ULIS 2007), LEUVEN, s.n, 2007, pp. 33 - 38 (atti di: 8th International Conference on Ultimate Integration on Silicon (ULIS 2007), Leuven, Belgum, 15-16 March, 2007) [Contributo in Atti di convegno]