S. Reggiani; E. Gnani; M. Rudan; G. Baccarani; C. Corvasce; D. Barlini; M. Ciappa; W. Fichtner; M. Denison; N. Jensen; G. Groos; M. Stecher, Measurement and modeling of the electron impact-ionization coefficient in silicon up to very high temperatures, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2005, 52, pp. 2290 - 2299 [articolo]
F. Affinito; E. Piccinini; A. Bigiani; R. Brunetti; C. Jacoboni; M. Rudan, Noise Properties of Single Open Ion Channels: an Atomistic Computational Approach, in: Unsolved Problems of Noise and Fluctuations, NEW YORK, Melville, 2005, pp. 388 - 393 (atti di: UPoN 2005: Fourth International Conference on Unsolved Problems of Noise and Fluctuations in Physics, Biology and High Technology, Gallipoli, Italy, June 6-10, 2005) [Contributo in Atti di convegno]
A. Marchi; A. Bertoni; S. Reggiani; M. Rudan, Numerical simulation of ballistic surface transport in cylindrical nanosystems, in: Book of Abstracts of MSED 2005, PISA, s.n, 2005, 1, pp. 103 - 104 (atti di: 15th Workshop on Modelling and Simulation of Electron Devices (MSED 2005), Pisa, 4-5 July, 2005) [Contributo in Atti di convegno]
E. Gnani; S. Reggiani; M. Rudan; G. Baccarani, On the Electrostatics of Double-Gate and Cylindrical Nanowire MOSFETs, «JOURNAL OF COMPUTATIONAL ELECTRONICS», 2005, 4, pp. 71 - 74 [articolo]
E. Piccinini; F. Affinito; R. Brunetti; C. Jacoboni; M. Rudan, Physical Mechanisms for Ion-Current Levelling off in the KcsA Channel through Combined Monte Carlo/Molecular Dynamics Simulations, in: Proc of the 14th International Conference on Nonequilibrium
Carrier Dynamics in Semiconductors (HCIS-14), CHICAGO, IL, IEEE, 2005, pp. 15 - 16 (atti di: 14th International Conference on Nonequilibrium
Carrier Dynamics in Semiconductors (HCIS-14), Chicago, July 24-29, 2005) [Contributo in Atti di convegno]
S. Reggiani; E. Gnani; M. Rudan; G. Baccarani; S. Bychikhin; J. Kuzmik; D. Pogany; E. Gornik; M. Denison; N. Jensen; G. Groos; M. Stecher, Predictive device simulation for ESD protection structures validated with transient interferometric thermal-mapping experiments, in: Proceedings of the European Solid-State Device Research Conference (ESSDERC 2005), GRENOBLE, s.n, 2005, pp. 411 - 414 (atti di: European Solid-State Device Research Conference (ESSDERC 2005), Grenoble, 11-15 Settembre 2005) [Contributo in Atti di convegno]
E. Gnani; A. Marchi; S. Reggiani; M. Rudan; G. Baccarani, Quantum-mechanical analysis of the electrostatics in silicon-nanowire and carbon-nanotube FETs, in: Proceedings of the European Solid-State Device Research Conference (ESSDERC 2005), GRENOBLE, s.n, 2005, pp. 161 - 164 (atti di: European Solid-State Device Research Conference (ESSDERC 2005), Grenoble, 13-15 Settembre 2005) [Contributo in Atti di convegno]
M. Rudan; A. Marchi; R. Brunetti; S. Reggiani; E. Gnani, The R-Sigma Approach to Tunneling in Nanoscale Devices, in: Proc. of the 14th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-14)., CHICAGO, IL, IEEE, 2005, pp. 45 - 46 (atti di: 14th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-14)., Chicago, July 24-29, 2005) [Contributo in Atti di convegno]
M. Rudan, The R-Sigma Method for Nanoscale-Device Analysis, in: Proc. of the 2005 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2005), TOKYO, IEEE EDS and Japan Society of Applied Physics, 2005, pp. 13 - 18 (atti di: 2005 International Conference on Simulation of Semiconductor Processes and Devices (2005), Tokyo, Japan, September 1-3, 2005) [Contributo in Atti di convegno]
A. Marchi; A. Bertoni; S. Reggiani; M. Rudan, 3D simulation of quantum-wire confining potential for a GaAs/AlGaAs 2DEG heterostructure, «SEMICONDUCTOR SCIENCE AND TECHNOLOGY», 2004, 19, pp. 415 - 417 [articolo]
M. Rudan; G. Perroni, A Method for Determining the Screening Length of the Coulombic Scattering in Non-Degenerate and Degenerate Semiconductors, in: Simulation of Semiconductor Processes and Devices (SISPAD 2004), WIEN, Springer, 2004, 1, pp. 121 - 124 (atti di: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD-2004), Munich, 2-4 Settembre 2004) [Contributo in Atti di convegno]
E. Gnani; S. Reggiani; M. Rudan; G. Baccarani, A new approach to the self-consistent solution of the Schroedinger-Poisson Equations in nanowire MOSFETs, in: Proceedings of the 34th European Solid-State Deviec Research Conference, LEUVEN, s.n, 2004, pp. 177 - 180 (atti di: European Solid-State Device Research Conference (ESSDERC 2004), Leuven, BE, 21-23 Settembre 2004) [Contributo in Atti di convegno]
AFFINITO F.; BIGIANI A.; BRUNETTI R.; CARLONI P.; JACOBONI C.; PICCININI E.; RUDAN M., A simulative method for the analysis of conduction properties of ion channels based on first-principle approaches, in: Proceedings of the Tenth International Workshop on Computational Electronics (IWCE-10), WEST LAFAYETTE, IN, IEEE, 2004, pp. 137 - 138 (atti di: Tenth International Workshop on Computational Electronics (IWCE-10), West Lafayette, IN, Oct. 24-27, 2004) [Contributo in Atti di convegno]
RONCAGLIA A.; ELMI I.; DORI L.; RUDAN M., Adaptive K-NN for the detection of air pollutants with a sensor array, «IEEE SENSORS JOURNAL», 2004, 4, pp. 248 - 256 [articolo]
E. Gnani; F. Ghidoni; M. Rudan, Automatic Optimization Algorithm for a Direct 2D and 3D Mesh Generation from the Layout Information, in: Simulation of Semiconductor Processes and Devices (SISPAD 2004), WIEN, Springer, 2004, 1, pp. 343 - 346 (atti di: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD-2004), Munich, 2-4 Settembre 2004) [Contributo in Atti di convegno]
