Arienti, G; Imperiale, I.; Reggiani, S.; Gnani, E.; Gnudi, A.; Baccarani, G.; Nguyen, L.; Hernandez-Luna, A.; Huckabee, J.; Denison, M., Optimization of HV LDMOS devices accounting for packaging interaction, in: Proceedings of the International Symposium on Power Semiconductor Devices and ICs, Institute of Electrical and Electronics Engineers Inc., 2015, 2015-, pp. 305 - 308 (atti di: 27th IEEE International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015, Kowloon Shangri-La, chn, 2015) [Contribution to conference proceedings]
Imperiale, Ilaria; Reggiani, Susanna; Gnani, Elena; Gnudi, Antonio; Baccarani, Giorgio; Nguyen, Luu; Hernandez-Luna, Alex; Huckabee, James; Denison, Marie; Varghese, Dhanoop, Role of encapsulation formulation on charge transport phenomena and HV device instability, in: Proceedings - Electronic Components and Technology Conference, Institute of Electrical and Electronics Engineers Inc., 2015, 2015-, pp. 159 - 167 (atti di: 2015 65th IEEE Electronic Components and Technology Conference, ECTC 2015, Sheraton San Diego Hotel and Marina, usa, 2015) [Contribution to conference proceedings]
Di Lecce, Valerio; Gnudi, Antonio; Gnani, Elena; Reggiani, Susanna; Baccarani, Giorgio, Simulations of Graphene Base Transistors with Improved Graphene Interface Model, «IEEE ELECTRON DEVICE LETTERS», 2015, 36, Article number: 7147793 , pp. 969 - 971 [Scientific article]
Baccarani, G.; Baravelli, E.; Gnani, E.; Gnudi, A.; Reggiani, S., Theoretical analyses and modeling for nanoelectronics, in: European Solid-State Device Research Conference, Editions Frontieres, «PROCEEDINGS OF THE EUROPEAN SOLID STATE DEVICE RESEARCH CONFERENCE», 2015, 2015-, pp. 4 - 9 (atti di: 45th European Solid-State Device Research Conference, ESSDERC 2015, Messe Congress, aut, 2015) [Contribution to conference proceedings]
Baccarani, G.; Baravelli, E.; Gnani, E.; Gnudi, A.; Reggiani, S., Theoretical analyses and modeling for nanoelectronics, in: European Solid-State Circuits Conference, IEEE Computer Society, 2015, 2015-, pp. 4 - 9 (atti di: 41st European Solid-State Circuits Conference, ESSCIRC 2015, Messe Congress, aut, 2015) [Contribution to conference proceedings]
Villani, F.; Gnani, E.; Gnudi, A.; Reggiani, S.; Baccarani, G., A quasi 2D semianalytical model for the potential profile in hetero and homojunction tunnel FETs, in: 2014 44th European Solid State Device Research Conference (ESSDERC), Bez, R; Pavan, P; Meneghesso, G;, 2014, pp. 262 - 265 (atti di: 2014 44th European Solid State Device Research Conference (ESSDERC), Venice, Italy, Sept 22-26, 2014) [Contribution to conference proceedings]
R. Grassi; A. Gnudi; V. Di Lecce; E. Gnani; S. Reggiani; G. Baccarani, Boosting the voltage gain of graphene FETs through a differential amplifier scheme with positive feedback, «SOLID-STATE ELECTRONICS», 2014, 100, pp. 54 - 60 [Scientific article]
Baravelli, E.; Gnani, E.; Gnudi, A.; Reggiani, S.; Baccarani, G., Capacitance estimation for InAs Tunnel FETs by means of full-quantum k·p simulation, in: 2014 15th International Conference on Ultimate Integration on Silicon (ULIS), 2014, pp. 17 - 20 (atti di: ULIS 2014 - 2014 15th International Conference on Ultimate Integration on Silicon, Stockholm, Sweden, 5-7 April 2014) [Contribution to conference proceedings]
Susanna Reggiani; Gaetano Barone; Elena Gnani; Antonio Gnudi; Giorgio Baccarani; Stefano Poli; Rick Wise; Ming-Yeh Chuang; Weidong Tian; Sameer Pendharkar; Marie Denison, Characterization and modeling of electrical stress degradation in STI-based integrated power devices, «SOLID-STATE ELECTRONICS», 2014, 102, pp. 25 - 41 [Scientific article]
Pasquale, Maiorano; Elena, Gnani; Antonio, Gnudi; Susanna, Reggiani; Giorgio, Baccarani, Design and optimization of impurity- and electrostatically-doped superlattice FETs to meet all the ITRS power targets at VDD=0.4V, «SOLID-STATE ELECTRONICS», 2014, 101, pp. 70 - 78 [Scientific article]
Giovanni Betti Beneventi; Elena Gnani; Antonio Gnudi; Susanna Reggiani; Giorgio Baccarani, Dual-Metal-Gate InAs Tunnel FET With Enhanced Turn-On Steepness and High On-Current, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2014, 61, pp. 776 - 784 [Scientific article]
Roberto, Grassi; Antonio, Gnudi; Valerio Di, Lecce; Elena, Gnani; Susanna, Reggiani; Giorgio, Baccarani, Exploiting Negative Differential Resistance in Monolayer Graphene FETs for High Voltage Gains, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2014, 61, pp. 617 - 624 [Scientific article]
Valerio, Di Lecce; Roberto, Grassi; Antonio, Gnudi; Elena, Gnani; Susanna, Reggiani; Giorgio, Baccarani, Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation, in: 2014 44th European Solid State Device Research Conference (ESSDERC), Bez, R; Pavan, P; Meneghesso, G;, 2014, pp. 313 - 316 (atti di: 2014 44th European Solid State Device Research Conference (ESSDERC), Venice, Italy, Sept 22-26, 2014) [Contribution to conference proceedings]
Maiorano, P.; Gnani, E.; Grassi, R.; Gnudi, A.; Reggiani, S.; Baccarani, G., Investigation on the electrical properties of superlattice FETs using a non-parabolic band model, «SOLID-STATE ELECTRONICS», 2014, 98, pp. 45 - 49 [Scientific article]
S. Reggiani; F. Monti; G. Barone; E. Gnani; A. Gnudi; G. Baccarani; S. Poli; M.-Y. Chuang; W. Tian; R. Wise, Linear drain current degradation of STI-based LDMOS transistors under AC stress conditions, in: Proceedings of the International Symposium on Power Semiconductor Devices and ICs, 2014, pp. 193 - 196 (atti di: 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD), Waikoloa, Hawaii (USA), June 15-19, 2014) [Contribution to conference proceedings]
