Emanuele, Baravelli; Elena, Gnani; Roberto, Grassi; Antonio, Gnudi; Susanna, Reggiani; Giorgio, Baccarani, Optimization of n-and p-type TFETs integrated on the same InAs/Al xGa1-xSb technology platform, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2014, 61, pp. 178 - 185 [Scientific article]
Pugnaghi, Claudio; Grassi, Roberto; Gnudi, Antonio; Di Lecce, Valerio; Gnani, Elena; Reggiani, Susanna; Baccarani, Giorgio, Semianalytical quantum model for graphene field-effect transistors, «JOURNAL OF APPLIED PHYSICS», 2014, 116, Article number: 114505 , pp. 1145051 - 1145059 [Scientific article]
Federico, Monti; Susanna, Reggiani; Barone, G.; Elena, Gnani; Antonio, Gnudi; Giorgio, Baccarani; Poli, S.; Chuang, M.-Y.; Tian, W.; Varghese, D.; Wise, R., TCAD analysis of HCS degradation in LDMOS devices under AC stress conditions, in: Proceedings of the 2014 44th European Solid State Device Research Conference (ESSDERC 2014), 2014, pp. 333 - 336 (atti di: 2014 44th European Solid State Device Research Conference (ESSDERC 2014), Venice, Italy, Sept 22-26, 2014) [Contribution to conference proceedings]
Imperiale, I.; Reggiani, S.; Gnani, E.; Gnudi, A.; Baccarani, G.; Nguyen, L.; Denison, M., TCAD modeling of charge transport in HV-IC encapsulation materials, in: 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2014, pp. 450 - 453 (atti di: 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD), Waikoloa, Hawaii (USA), June 15-19, 2014) [Contribution to conference proceedings]
Imperiale, I.; Reggiani, S.; Gnani, E.; Gnudi, A.; Baccarani, G.; Nguyen, L.; Denison, M., TCAD modeling of encapsulation layer in high-voltage, high-temperature operation regime, in: Proceedings of the 2014 44th European Solid State Device Research Conference (ESSDERC 2014), 2014, pp. 325 - 328 (atti di: 44th European Solid State Device Research Conference (ESSDERC), Venice, Italy, Sept 22-26, 2014) [Contribution to conference proceedings]
Emanuele, Baravelli; Elena, Gnani; Antonio, Gnudi; Susanna, Reggiani; Giorgio, Baccarani, TFET Inverters With n-/p-Devices on the Same Technology Platform for Low-Voltage/Low-Power Applications, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2014, 61, pp. 473 - 478 [Scientific article]
G. Iannaccone;G. Fiori;S. Reggiani;M. Pala, Beyond CMOS Nanoscale CMOS, in: Nanoscale CMOS, Hoboken, NJ, John Wiley and sons, Inc., 2013, pp. 443 - 470 [Chapter or essay]
BETTI BENEVENTI, Giovanni; Gnani, Elena; Gnudi, Antonio; Reggiani, Susanna; Baccarani, Giorgio, Boosting InAs TFET on-current above 1 mA/um with no leakage penalty, in: 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC), IEEE Computer Society, 2013, pp. 73 - 76 (atti di: European Solid-State Device Research Conference (ESSDERC), Bucharest, 16-20 Sept. 2013) [Contribution to conference proceedings]
Giovanni Betti Beneventi;Elena Gnani;Antonio Gnudi;Susanna Reggiani;Giorgio Baccarani, Can Interface Traps Suppress TFET Ambipolarity?, «IEEE ELECTRON DEVICE LETTERS», 2013, 34, pp. 1557 - 1559 [Scientific article]
E. Baravelli;E. Gnani;R. Grassi;A. Gnudi;S. Reggiani;G. Baccarani, Complementary n- and p-type TFETs on the same InAs/Al(0.05)Ga(0.95)Sb platform, in: 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC), IEEE Computer Society, 2013, pp. 69 - 72 (atti di: European Solid-State Device Research Conference (ESSDERC), Bucharest, 16-20 Sept. 2013) [Contribution to conference proceedings]
DI LECCE, Valerio; Grassi, Roberto; Gnudi, Antonio; Gnani, Elena; Reggiani, Susanna; Baccarani, Giorgio, DC and small-signal numerical simulation of graphene base transistor for terahertz operation, in: 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC), IEEE Computer Society, 2013, pp. 314 - 317 (atti di: European Solid-State Device Research Conference (ESSDERC), Bucharest, 16-20 Sept. 2013) [Contribution to conference proceedings]
E. Gnani; A. Gnudi; S. Reggiani; G. Baccarani, Deterministic solution of the 1D Boltzmann transport equation: Application to the study of current transport in nanowire FETs, «MICROELECTRONICS JOURNAL», 2013, 44, pp. 20 - 25 [Scientific article]
E. Gnani;A. Gnudi;S. Reggiani;G. Baccarani, Drain-conductance optimization in nanowire TFETs by means of a physics-based analytical model, «SOLID-STATE ELECTRONICS», 2013, 84, pp. 96 - 102 [Scientific article]
E. Baravelli; E. Gnani; A. Gnudi; S. Reggiani; G. Baccarani, Full-quantum simulation of heterojunction TFET inverters providing better performance than multi-gate CMOS at sub-0.35V VDD, in: 2013 Third Berkeley Symposium on Energy Efficient Electronic Systems (E3S), 2013, pp. 1 - 2 (atti di: 2013 3rd Berkeley Symposium on Energy Efficient Electronic Systems, Berkeley, CA, 28-29 October, 2013) [Abstract]
Maiorano, Pasquale; Gnani, Elena; Gnudi, Antonio; Reggiani, Susanna; Baccarani, Giorgio, Gate stack optimization to minimize power consumption in super-lattice FETs, in: 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC), IEEE Computer Society, 2013, pp. 81 - 84 (atti di: European Solid-State Device Research Conference (ESSDERC), Bucharest, 16-20 Sept. 2013) [Contribution to conference proceedings]
