The research activity of the group addresses the physical modeling, numerical simulation, and characterization of solid-state electron devices and sensors fabricated with emerging technologies. Specifically, the activities focus on devices based on carbon, 2D semiconductors, ferroelectric materials, III-V semiconductors, tunnel-effect transistors, phase-change memories, advanced silicon, GaN/AlGaN and SiC devices for high-voltage applications. Physical modeling is an essential aspect for better understanding the physical properties of the devices under investigation, and for exploring/optimizing the different implementations. To this purpose, the research group adopts and develops suitable simulation tools and, in parallel, carries out measurements for device characterization and model validation.
Modeling and characterization of the hot-carrier stress degradation
in Smart Power MOSFETs
One of the key challenges in building power devices for next
generation Smart-Power technology is their reliability. In this
research activity the high-voltage devices will be studied with
respect to their major electrical characteristics, namely, specific
on-resistance versus breakdown voltage and safe operating area
before and after hot carrier stress. Extensive numerical
investigations will be carried out with the aim of clarifying the
most relevant physical effects up to high drain and gate biases.
The major goal of this activity is the development of a predictive
TCAD tool for HCS degradation.
Package Influences on High-Voltage Semiconductor FETs
The current trend towards increasing the integration of
high-voltage devices and low-voltage circuits within one package to
realize compact power systems and/or increase operation frequency
drives new configurations (e.g. stacked dies) for which no
reliability study has been published yet. Little analysis has been
reported on the physical mechanisms, material features and design
aspects that drive them. The proposed research activity deals with
the effect of charging and polarization of molding compounds and
other packaging materials, experimental characterization of losses
and model validation. The expected outcome of the research activity
is an extensive overview of package-to-die coupling effects versus
modeled material properties, die technology and package
designs.
Investigation of Reliability Issues and Physical Mechanisms of
Breakdown in High-Voltage GaN/AlGaN HFETs on Silicon Substrates
This project focuses on the investigation of reliability issues
and achievable performance of GaN-HFETs grown on Si substrates for
power conversion applications as replacement for Si-based MOSFETs.
TCAD device simulations, physical modeling and reliability
investigations will be extensively addressed. The simulation decks
of power GaN FETs on silicon substrate will be set up by accounting
for different stacks of materials. The main goal will be the
determination and comparison of performance stability and
robustness of GaN devices for different geometries, by varying the
interface trap configurations and the operating temperatures.
