Zunarelli, L.; Rotorato, S.; Gnani, E.; Reggiani, S.; Sankaralingam, R.; Dissegna, M.; Boselli, G., Optimization of the drain-side configuration in ESD-protection SCR-LDMOS for high holding-voltage applications, «MICROELECTRONICS RELIABILITY», 2025, 168, Article number: 115664, pp. 1 - 7 [articolo]
Ercolano, F.; Balestra, L.; Krause, S.; Leone, S.; Streicher, I.; Waltereit, P.; Dammann, M.; Reggiani, S., TCAD analysis of the high-temperature reverse-bias stress on AlGaN/GaN HEMTs, «POWER ELECTRONIC DEVICES AND COMPONENTS», 2025, 10, Article number: 100080, pp. 1 - 7 [articolo]Open Access
Balestra, L.; Gnani, E.; Rossetti, M.; Depetro, R.; Reggiani, S., Characterization and TCAD Modeling of the Lateral Space Charge Accumulation in Epoxy Molding Compound in Packaged HV-ICs, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2024, 71, pp. 2565 - 2569 [articolo]Open Access
Balestra, L.; Gnani, E.; Reggiani, S.; Rossetti, M.; Depetro, R., Characterization and TCAD Simulation of the Electrostatic Potential Distortion in HV-ICs due to Losses in the Epoxy Mold Compound, in: Proceedings of the 2024 IEEE Latin American Electron Devices Conference, 345 E 47TH ST, NEW YORK, NY 10017 USA, IEEE, 2024, pp. 286 - 289 (atti di: 2024 IEEE Latin American Electron Devices Conference, LAEDC 2024, Guatemala City, 8 May 2024) [Contributo in Atti di convegno]
Ercolano, F.; Tallarico, A. N.; Millesimo, M.; Gnani, E.; Reggiani, S.; Fiegna, C.; Borga, M.; Posthuma, N.; Bakeroot, B., GaN HEMT with p-Type Schottky Gate: A Case Study of TCAD Modeling of the Gate Leakage Current, in: Proceedings of SIE 2023 54th Annual Meeting of the Italian Electronics Society, Springer Science and Business Media Deutschland GmbH, «LECTURE NOTES IN ELECTRICAL ENGINEERING», 2024, 1113, pp. 288 - 297 (atti di: 54th Annual Meeting of the Italian Electronics Society, SIE 2023, Noto (SR), Italy, 6/8 September 2023) [Contributo in Atti di convegno]
Balestra L.; Cirioni L.; Cavallini A.; Reggiani S.; Rossetti M.; Gallo M.; Guarnera S.; Depetro R., Anomalous increase of leakage current in epoxy moulding compounds under wet conditions, «SOLID-STATE ELECTRONICS», 2023, 208, Article number: 108728, pp. 1 - 4 [articolo]Open Access
Gnudi A.; Gnani E.; Reggiani S.; Baccarani G., Application of the k ⋅ p Method to Device Simulation, in: Springer Handbooks, Cham, Springer Science and Business Media Deutschland GmbH, 2023, pp. 1491 - 1514 (SPRINGER HANDBOOKS) [capitolo di libro]
Giuliano, Federico; Reggiani, Susanna; Gnani, Elena; Gnudi, Antonio; Rossetti, Mattia; Depetro, Riccardo, Breakdown-Voltage Degradation Under AC Stress of Thick SiO2 Capacitors for Galvanic Insulation, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2023, 70, pp. 4953 - 4957 [articolo]Open Access
Rudan M.; Reggiani S.; Baccarani G., MOS Capacitors, MOS Transistors, and Charge-Transfer Devices, in: Springer Handbooks, Cham, Springer Science and Business Media Deutschland GmbH, 2023, pp. 331 - 369 (SPRINGER HANDBOOKS) [capitolo di libro]
Balestra L.; Ercolano F.; Gnani E.; Reggiani S., TCAD Modeling of High-Field Electron Transport in Bulk Wurtzite GaN: The Full-Band SHE-BTE, «IEEE ACCESS», 2023, 11, pp. 6293 - 6298 [articolo]Open Access
Zunarelli L.; Balestra L.; Reggiani S.; Sankaralingam R.; Dissegna M.; Boselli G., TCAD study of the Holding-Voltage Modulation in Irradiated SCR-LDMOS for HV ESD Protection, in: IEEE International Reliability Physics Symposium Proceedings, Institute of Electrical and Electronics Engineers Inc., «IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS», 2023, 2023-, pp. 1 - 6 (atti di: 61st IEEE International Reliability Physics Symposium, IRPS 2023, usa, 2023) [Contributo in Atti di convegno]
Giuliano, F.; Reggiani, S.; Gnani, E.; Gnudi, A.; Rossetti, M.; Depetro, R.; Croce, G., Characterization and numerical analysis of breakdown in thick amorphous SiO2 capacitors, «SOLID-STATE ELECTRONICS», 2022, 192, Article number: 108256, pp. 1 - 7 [articolo]Open Access
Balestra L.; Gnani E.; Reggiani S., Electron effective masses of Scx Al1- x N and Alx Ga1- x N from first-principles calculations of unfolded band structure, «JOURNAL OF APPLIED PHYSICS», 2022, 132, Article number: 215108, pp. 1 - 6 [articolo]Open Access
Balestra L.; Reggiani S.; Gnani E.; Gnudi A., Group velocity of electrons in 4H-SiC from Density Functional Theory simulations, «SOLID-STATE ELECTRONICS», 2022, 194, Article number: 108338, pp. 1 - 4 [articolo]Open Access
Balestra, L.; Reggiani, S.; Gnudi, A.; Gnani, E.; Dobrzynska, J.; Vobecky, J., On the breakdown voltage temperature dependence of high-voltage power diodes passivated with diamond-like carbon, «SOLID-STATE ELECTRONICS», 2022, 193, Article number: 108284, pp. 1 - 7 [articolo]Open Access
