Balestra, L.; Di Stasi, S.; Gnani, E.; Reggiani, S.; Chen, M. -Y.; Iwai, H.; Chang, E. Y., Impact of interface traps on the subthreshold performance of InGaAs nanosheet transistors, «SOLID-STATE ELECTRONICS», 2026, 231, Article number: 109265, pp. 109265-1 - 109265-4 [articolo]
Ercolano, F.; Balestra, L.; Krause, S.; Leone, S.; Streicher, I.; Waltereit, P.; Dammann, M.; Reggiani, S., Reliability of AlScN/GaN HEMTs Under Pulsed Measurements and HTRB Step-Stress Tests: Experimental and TCAD Insights, «IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY», 2026, 14, pp. 1 - 9 [articolo]
Balestra, L.; Rossetti, M.; Gnani, E.; Reggiani, S., Impact of water absorption on electrical properties of epoxy composite polymers: Suppressed charge trapping and enhanced ion transport, «JOURNAL OF APPLIED PHYSICS», 2025, 138, Article number: 025105, pp. 025105-1 - 025105-13 [articolo]
Balestra, L.; Gnani, E.; Reggiani, S.; Rossetti, M.; Depetro, R., In-Package Measurements of Space-Charge Accumulation in Epoxy Mold Compound Through Silicon Integrated Charge Sensors, in: Annual Report - Conference on Electrical Insulation and Dielectric Phenomena, CEIDP, Institute of Electrical and Electronics Engineers Inc., 2025, pp. 588 - 591 (atti di: 100th IEEE Conference on Electrical Insulation and Dielectric Phenomena, CEIDP 2025, Conference Centre at the University of Manchester, Nancy Rothwell Building, Booth St E, gbr, 2025) [Contributo in Atti di convegno]
Drudi, G.; Reggiani, S.; Sankaralingam, R.; Dissegna, M.; Boselli, G., Novel Floating-p SCR-LDMOS Design for BCD Technology: Improving ESD Protection with High Holding Voltages and Fast Turn-On, in: 2025 47th Annual EOS/ESD Symposium (EOS/ESD), 2025, pp. 1 - 7 (atti di: 2025 47th Annual EOS/ESD Symposium (EOS/ESD), Riverside, CA, USA, September 13th - 18th, 2025) [Contributo in Atti di convegno]
Zunarelli, L.; Rotorato, S.; Gnani, E.; Reggiani, S.; Sankaralingam, R.; Dissegna, M.; Boselli, G., Optimization of the drain-side configuration in ESD-protection SCR-LDMOS for high holding-voltage applications, «MICROELECTRONICS RELIABILITY», 2025, 168, Article number: 115664, pp. 1 - 7 [articolo]Open Access
Ercolano, F.; Balestra, L.; Krause, S.; Leone, S.; Streicher, I.; Waltereit, P.; Dammann, M.; Reggiani, S., TCAD analysis of the high-temperature reverse-bias stress on AlGaN/GaN HEMTs, «POWER ELECTRONIC DEVICES AND COMPONENTS», 2025, 10, Article number: 100080, pp. 1 - 7 [articolo]Open Access
Balestra, L.; Gnani, E.; Rossetti, M.; Depetro, R.; Reggiani, S., Characterization and TCAD Modeling of the Lateral Space Charge Accumulation in Epoxy Molding Compound in Packaged HV-ICs, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2024, 71, pp. 2565 - 2569 [articolo]Open Access
Balestra, L.; Gnani, E.; Reggiani, S.; Rossetti, M.; Depetro, R., Characterization and TCAD Simulation of the Electrostatic Potential Distortion in HV-ICs due to Losses in the Epoxy Mold Compound, in: Proceedings of the 2024 IEEE Latin American Electron Devices Conference, 345 E 47TH ST, NEW YORK, NY 10017 USA, IEEE, 2024, pp. 286 - 289 (atti di: 2024 IEEE Latin American Electron Devices Conference, LAEDC 2024, Guatemala City, 8 May 2024) [Contributo in Atti di convegno]
Balestra, L.; Riaz, M. T.; Giuliano, F.; Cavallini, A.; Reggiani, S.; Oldani, L.; Guarnera, S. S.; Rossetti, M.; Depetro, R., Dielectric Breakdown of in-Package Epoxy Mold Compound under Wet and Dry Conditions: Frequency and Temperature dependence, in: Proceedings of the 26th Electronics Packaging Technology Conference, EPTC 2024, Institute of Electrical and Electronics Engineers Inc., 2024, pp. 690 - 694 (atti di: 26th Electronics Packaging Technology Conference, EPTC 2024, Grand Copthorne Waterfront Hotel, sgp, 2024) [Contributo in Atti di convegno]
Ercolano, F.; Tallarico, A. N.; Millesimo, M.; Gnani, E.; Reggiani, S.; Fiegna, C.; Borga, M.; Posthuma, N.; Bakeroot, B., GaN HEMT with p-Type Schottky Gate: A Case Study of TCAD Modeling of the Gate Leakage Current, in: Proceedings of SIE 2023 54th Annual Meeting of the Italian Electronics Society, Springer Science and Business Media Deutschland GmbH, «LECTURE NOTES IN ELECTRICAL ENGINEERING», 2024, 1113, pp. 288 - 297 (atti di: 54th Annual Meeting of the Italian Electronics Society, SIE 2023, Noto (SR), Italy, 6/8 September 2023) [Contributo in Atti di convegno]
Balestra L.; Cirioni L.; Cavallini A.; Reggiani S.; Rossetti M.; Gallo M.; Guarnera S.; Depetro R., Anomalous increase of leakage current in epoxy moulding compounds under wet conditions, «SOLID-STATE ELECTRONICS», 2023, 208, Article number: 108728, pp. 1 - 4 [articolo]Open Access
Gnudi A.; Gnani E.; Reggiani S.; Baccarani G., Application of the k ⋅ p Method to Device Simulation, in: Springer Handbooks, Cham, Springer Science and Business Media Deutschland GmbH, 2023, pp. 1491 - 1514 (SPRINGER HANDBOOKS) [capitolo di libro]
Giuliano, Federico; Reggiani, Susanna; Gnani, Elena; Gnudi, Antonio; Rossetti, Mattia; Depetro, Riccardo, Breakdown-Voltage Degradation Under AC Stress of Thick SiO2 Capacitors for Galvanic Insulation, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2023, 70, pp. 4953 - 4957 [articolo]Open Access
Rudan M.; Reggiani S.; Baccarani G., MOS Capacitors, MOS Transistors, and Charge-Transfer Devices, in: Springer Handbooks, Cham, Springer Science and Business Media Deutschland GmbH, 2023, pp. 331 - 369 (SPRINGER HANDBOOKS) [capitolo di libro]
