Betti Beneventi, Giovanni; Reggiani, Susanna; Gnudi, Antonio; Gnani, Elena; Alian, Alireza; Collaert, Nadine; Mocuta, Anda; Thean, Aaron; Baccarani, Giorgio, A TCAD Low-Field Electron Mobility Model for Thin-Body InGaAs on InP MOSFETs Calibrated on Experimental Characteristics, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2015, 62, Article number: 7293162, pp. 3645 - 3652 [articolo]
Betti Beneventi, Giovanni; Reggiani, Susanna; Gnudi, Antonio; Gnani, Elena; Aliane, Alireza; Collaert, Nadine; Mocuta, Anda; Thean, Aaron; Baccarani, Giorgio, Analytical model of thin-body InGaAs-on-InP MOSFET low-field electron mobility for integration in TCAD tools, in: EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Institute of Electrical and Electronics Engineers Inc., 2015, pp. 241 - 244 (atti di: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2015, ita, 2015) [Contributo in Atti di convegno]
Gnani, E.; Baravelli, E.; Gnudi, A.; Reggiani, S.; Baccarani, G., Capacitance estimation for InAs Tunnel FETs by means of full-quantum k.p simulation, «SOLID-STATE ELECTRONICS», 2015, 108, pp. 104 - 109 [articolo]
Reggiani, Susanna; Barone, Gaetano; Gnani, Elena; Gnudi, Antonio; Baccarani, Giorgio; Poli, Stefano; Wise, Rick; Chuang, Ming-Yeh; Tian, Weidong; Pendharkar, Sameer; Denison, Marie, Characterization and modeling of high-voltage LDMOS transistors, in: Hot Carrier Degradation in Semiconductor Devices, Cham, Switzerland, Springer International Publishing, 2015, pp. 309 - 339 [capitolo di libro]
Maiorano, P.; Gnani, E.; Gnudi, A.; Reggiani, S.; Baccarani, G., Effects of Dit-induced degradation on InGaAs/InAlAs nanowire superlattice-FET using Al2O3 and HfO2/La2O3 as gate stacks, in: EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Institute of Electrical and Electronics Engineers Inc., 2015, pp. 57 - 60 (atti di: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2015, ita, 2015) [Contributo in Atti di convegno]
Di Lecce, Valerio; Grassi, Roberto; Gnudi, Antonio; Gnani, Elena; Reggiani, Susanna; Baccarani, Giorgio, Graphene base heterojunction transistor: An explorative study on device potential, optimization, and base parasitics, «SOLID-STATE ELECTRONICS», 2015, 114, pp. 23 - 29 [articolo]
Di Lecce, Valerio; Gnudi, Antonio; Gnani, Elena; Reggiani, Susanna; Baccarani, Giorgio, Graphene-base heterojunction transistors for post-CMOS high-speed applications: Hopes and challenges, in: Device Research Conference (DRC), 2015 73rd Annual, 2015, pp. 91 - 92 (atti di: 2015 73rd Annual Device Research Conference (DRC), Columbus, OH, 21-24 June 2015) [Contributo in Atti di convegno]
Cornigli, D.; Monti, F.; Reggiani, S.; Gnani, E.; Gnudi, A.; Baccarani, G., Leakage current and breakdown of GaN-on-Silicon vertical structures, in: EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Institute of Electrical and Electronics Engineers Inc., 2015, pp. 25 - 28 (atti di: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2015, ita, 2015) [Contributo in Atti di convegno]
Cornigli, Davide; Reggiani, Susanna; Gnani, Elena; Gnudi, Antonio; Baccarani, Giorgio; Moens, Peter; Vanmeerbeek, Piet; Banerjee, Abhishek; Meneghesso, Gaudenzio, Numerical investigation of the lateral and vertical leakage currents and breakdown regimes in GaN-on-Silicon vertical structures, in: 2015 IEEE International Electron Devices Meeting (IEDM), Institute of Electrical and Electronics Engineers Inc., 2015, pp. 5.3.1 - 5.3.4 (atti di: 61st IEEE International Electron Devices Meeting, IEDM 2015, usa, 2015) [Contributo in Atti di convegno]
Monti, F; Imperiale, I.; Reggiani, S.; Gnani, E.; Gnudi, A.; Baccarani, G.; Nguyen, L.; Hernandez-Luna, A.; Huckabee, J.; Tipirneni, N.; Denison, M., Numerical study of GaN-on-Si HEMT breakdown instability accounting for substrate and packaging interactions, in: Proceedings of the International Symposium on Power Semiconductor Devices and ICs, Institute of Electrical and Electronics Engineers Inc., 2015, 2015-, pp. 381 - 384 (atti di: 27th IEEE International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015, Kowloon Shangri-La, chn, 2015) [Contributo in Atti di convegno]
Betti Beneventi, Giovanni; Gnani, Elena; Gnudi, Antonio; Reggiani, Susanna; Baccarani, Giorgio, Optimization of a Pocketed Dual-Metal-Gate TFET by Means of TCAD Simulations Accounting for Quantization-Induced Bandgap Widening, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2015, 62, Article number: 6971197, pp. 44 - 51 [articolo]Open Access
Arienti, G; Imperiale, I.; Reggiani, S.; Gnani, E.; Gnudi, A.; Baccarani, G.; Nguyen, L.; Hernandez-Luna, A.; Huckabee, J.; Denison, M., Optimization of HV LDMOS devices accounting for packaging interaction, in: Proceedings of the International Symposium on Power Semiconductor Devices and ICs, Institute of Electrical and Electronics Engineers Inc., 2015, 2015-, pp. 305 - 308 (atti di: 27th IEEE International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015, Kowloon Shangri-La, chn, 2015) [Contributo in Atti di convegno]
Imperiale, Ilaria; Reggiani, Susanna; Gnani, Elena; Gnudi, Antonio; Baccarani, Giorgio; Nguyen, Luu; Hernandez-Luna, Alex; Huckabee, James; Denison, Marie; Varghese, Dhanoop, Role of encapsulation formulation on charge transport phenomena and HV device instability, in: Proceedings - Electronic Components and Technology Conference, Institute of Electrical and Electronics Engineers Inc., 2015, 2015-, pp. 159 - 167 (atti di: 2015 65th IEEE Electronic Components and Technology Conference, ECTC 2015, Sheraton San Diego Hotel and Marina, usa, 2015) [Contributo in Atti di convegno]
Di Lecce, Valerio; Gnudi, Antonio; Gnani, Elena; Reggiani, Susanna; Baccarani, Giorgio, Simulations of Graphene Base Transistors with Improved Graphene Interface Model, «IEEE ELECTRON DEVICE LETTERS», 2015, 36, Article number: 7147793, pp. 969 - 971 [articolo]
Baccarani, G.; Baravelli, E.; Gnani, E.; Gnudi, A.; Reggiani, S., Theoretical analyses and modeling for nanoelectronics, in: European Solid-State Device Research Conference, Editions Frontieres, 2015, 2015-, pp. 4 - 9 (atti di: 45th European Solid-State Device Research Conference, ESSDERC 2015, Messe Congress, aut, 2015) [Contributo in Atti di convegno]
Baccarani, G.; Baravelli, E.; Gnani, E.; Gnudi, A.; Reggiani, S., Theoretical analyses and modeling for nanoelectronics, in: European Solid-State Circuits Conference, IEEE Computer Society, 2015, 2015-, pp. 4 - 9 (atti di: 41st European Solid-State Circuits Conference, ESSCIRC 2015, Messe Congress, aut, 2015) [Contributo in Atti di convegno]
