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Susanna Reggiani

Professoressa ordinaria

Dipartimento di Ingegneria dell'Energia Elettrica e dell'Informazione "Guglielmo Marconi"

Settore scientifico disciplinare: ING-INF/01 ELETTRONICA

Pubblicazioni

Villani, F.; Gnani, E.; Gnudi, A.; Reggiani, S.; Baccarani, G., A quasi 2D semianalytical model for the potential profile in hetero and homojunction tunnel FETs, in: 2014 44th European Solid State Device Research Conference (ESSDERC), Bez, R; Pavan, P; Meneghesso, G;, 2014, pp. 262 - 265 (atti di: 2014 44th European Solid State Device Research Conference (ESSDERC), Venice, Italy, Sept 22-26, 2014) [Contributo in Atti di convegno]

R. Grassi; A. Gnudi; V. Di Lecce; E. Gnani; S. Reggiani; G. Baccarani, Boosting the voltage gain of graphene FETs through a differential amplifier scheme with positive feedback, «SOLID-STATE ELECTRONICS», 2014, 100, pp. 54 - 60 [articolo]

Baravelli, E.; Gnani, E.; Gnudi, A.; Reggiani, S.; Baccarani, G., Capacitance estimation for InAs Tunnel FETs by means of full-quantum k·p simulation, in: 2014 15th International Conference on Ultimate Integration on Silicon (ULIS), 2014, pp. 17 - 20 (atti di: ULIS 2014 - 2014 15th International Conference on Ultimate Integration on Silicon, Stockholm, Sweden, 5-7 April 2014) [Contributo in Atti di convegno]

Susanna Reggiani; Gaetano Barone; Elena Gnani; Antonio Gnudi; Giorgio Baccarani; Stefano Poli; Rick Wise; Ming-Yeh Chuang; Weidong Tian; Sameer Pendharkar; Marie Denison, Characterization and modeling of electrical stress degradation in STI-based integrated power devices, «SOLID-STATE ELECTRONICS», 2014, 102, pp. 25 - 41 [articolo]

Pasquale, Maiorano; Elena, Gnani; Antonio, Gnudi; Susanna, Reggiani; Giorgio, Baccarani, Design and optimization of impurity- and electrostatically-doped superlattice FETs to meet all the ITRS power targets at VDD=0.4V, «SOLID-STATE ELECTRONICS», 2014, 101, pp. 70 - 78 [articolo]

Giovanni Betti Beneventi; Elena Gnani; Antonio Gnudi; Susanna Reggiani; Giorgio Baccarani, Dual-Metal-Gate InAs Tunnel FET With Enhanced Turn-On Steepness and High On-Current, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2014, 61, pp. 776 - 784 [articolo]

Roberto, Grassi; Antonio, Gnudi; Valerio Di, Lecce; Elena, Gnani; Susanna, Reggiani; Giorgio, Baccarani, Exploiting Negative Differential Resistance in Monolayer Graphene FETs for High Voltage Gains, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2014, 61, pp. 617 - 624 [articolo]

Valerio, Di Lecce; Roberto, Grassi; Antonio, Gnudi; Elena, Gnani; Susanna, Reggiani; Giorgio, Baccarani, Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation, in: 2014 44th European Solid State Device Research Conference (ESSDERC), Bez, R; Pavan, P; Meneghesso, G;, 2014, pp. 313 - 316 (atti di: 2014 44th European Solid State Device Research Conference (ESSDERC), Venice, Italy, Sept 22-26, 2014) [Contributo in Atti di convegno]

Maiorano, P.; Gnani, E.; Grassi, R.; Gnudi, A.; Reggiani, S.; Baccarani, G., Investigation on the electrical properties of superlattice FETs using a non-parabolic band model, «SOLID-STATE ELECTRONICS», 2014, 98, pp. 45 - 49 [articolo]

S. Reggiani; F. Monti; G. Barone; E. Gnani; A. Gnudi; G. Baccarani; S. Poli; M.-Y. Chuang; W. Tian; R. Wise, Linear drain current degradation of STI-based LDMOS transistors under AC stress conditions, in: Proceedings of the International Symposium on Power Semiconductor Devices and ICs, 2014, pp. 193 - 196 (atti di: 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD), Waikoloa, Hawaii (USA), June 15-19, 2014) [Contributo in Atti di convegno]

Emanuele, Baravelli; Elena, Gnani; Roberto, Grassi; Antonio, Gnudi; Susanna, Reggiani; Giorgio, Baccarani, Optimization of n-and p-type TFETs integrated on the same InAs/Al xGa1-xSb technology platform, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2014, 61, pp. 178 - 185 [articolo]

Pugnaghi, Claudio; Grassi, Roberto; Gnudi, Antonio; Di Lecce, Valerio; Gnani, Elena; Reggiani, Susanna; Baccarani, Giorgio, Semianalytical quantum model for graphene field-effect transistors, «JOURNAL OF APPLIED PHYSICS», 2014, 116, pp. 1145051 - 1145059 [articolo]

Federico, Monti; Susanna, Reggiani; Barone, G.; Elena, Gnani; Antonio, Gnudi; Giorgio, Baccarani; Poli, S.; Chuang, M.-Y.; Tian, W.; Varghese, D.; Wise, R., TCAD analysis of HCS degradation in LDMOS devices under AC stress conditions, in: Proceedings of the 2014 44th European Solid State Device Research Conference (ESSDERC 2014), 2014, pp. 333 - 336 (atti di: 2014 44th European Solid State Device Research Conference (ESSDERC 2014), Venice, Italy, Sept 22-26, 2014) [Contributo in Atti di convegno]

Imperiale, I.; Reggiani, S.; Gnani, E.; Gnudi, A.; Baccarani, G.; Nguyen, L.; Denison, M., TCAD modeling of charge transport in HV-IC encapsulation materials, in: 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2014, pp. 450 - 453 (atti di: 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD), Waikoloa, Hawaii (USA), June 15-19, 2014) [Contributo in Atti di convegno]

Imperiale, I.; Reggiani, S.; Gnani, E.; Gnudi, A.; Baccarani, G.; Nguyen, L.; Denison, M., TCAD modeling of encapsulation layer in high-voltage, high-temperature operation regime, in: Proceedings of the 2014 44th European Solid State Device Research Conference (ESSDERC 2014), 2014, pp. 325 - 328 (atti di: 44th European Solid State Device Research Conference (ESSDERC), Venice, Italy, Sept 22-26, 2014) [Contributo in Atti di convegno]

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