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Susanna Reggiani

Professoressa ordinaria

Dipartimento di Ingegneria dell'Energia Elettrica e dell'Informazione "Guglielmo Marconi"

Settore scientifico disciplinare: ING-INF/01 ELETTRONICA

Pubblicazioni

Antonio Gnudi;Susanna Reggiani;Elena Gnani;Giorgio Baccarani, Semianalytical Model of the Subthreshold Current in Short-Channel Junctionless Symmetric Double-Gate Field-Effect Transistors, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2013, 60, pp. 1342 - 1348 [articolo]

S. Reggiani;G. Barone;E. Gnani;A. Gnudi;G. Baccarani;S. Poli;M.-Y. Chuang;W. Tian;R. Wise, TCAD predictions of linear and saturation HCS degradation in STI-based LDMOS transistors stressed in the impact-ionization regime, in: 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2013, pp. 375 - 378 (atti di: 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD), Kanazawa; Japan, 26-30 May 2013) [Contributo in Atti di convegno]

Susanna Reggiani;Gaetano Barone;Stefano Poli;Elena Gnani;Antonio Gnudi;Giorgio Baccarani;Ming-Yeh Chuang;Weidong Tian;Rick Wise, TCAD Simulation of Hot-Carrier and Thermal Degradation in STI-LDMOS Transistors, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2013, 60, pp. 691 - 698 [articolo]

A. Gnudi; S. Reggiani; E. Gnani; G. Baccarani, Analysis of threshold voltage variability due to random dopant fluctuations in junctionless FETs, «IEEE ELECTRON DEVICE LETTERS», 2012, 33, pp. 336 - 338 [articolo]

A. Gnudi; S. Reggiani; E. Gnani; G. Baccarani, Analytical Model for the Threshold Voltage Variability due to Random Dopant Fluctuations in Junctionless FETs, in: Proceedings of the 2012 International Conference on Simulation of Semiconductor Processes and Devices, s.l, s.n, 2012, pp. 117 - 120 (atti di: The International Conference on Simulation of Semiconductor Processes and Devices, Denver, Colorado, 5-7 settembre 2012) [Contributo in Atti di convegno]

E. Gnani; S. Reggiani; A. Gnudi; G. Baccarani, Drain-conductance optimization in nanowire TFETs, in: Proceedings of the 42.nd European Solid-State Device Research Conference, PISCATAWAY, NJ, IEEE, 2012, pp. 105 - 108 (atti di: European Solid-State Device Research Conference (ESSDERC 2012), Bordeaux, 18-20 September) [Contributo in Atti di convegno]

E. Gnani; A. Gnudi; S. Reggiani; G. Baccarani; N. Shen; N. Singh; G.Q. Lo; D.L. Kwong, Numerical investigation on the junctionless nanowire FET, «SOLID-STATE ELECTRONICS», 2012, 71, pp. 13 - 18 [articolo]

S. Poli; S. Reggiani; R.K. Sharma; M. Denison; E. Gnani; A. Gnudi; G. Baccarani, Optimization and Analysis of the Dual n/p-LDMOS Device, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2012, 59, pp. 745 - 753 [articolo]

E. Gnani; A. Gnudi; S. Reggiani; G. Baccarani, Physical Model of the Junctionless UTB SOI-FET, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2012, 59, pp. 941 - 948 [articolo]

Gnani, Elena; Reggiani, Susanna; Gnudi, Antonio; Baccarani, Giorgio, Physical Model of the Junctionless UTB SOI-FET, in: Proc. of the 8th European Workshop on Silicon on Insulator Technology, Devices and Circuits (EUROSOI 2012), s.l, s.n, 2012, 59, pp. 941 - 948 (atti di: 8th European Workshop on Silicon on Insulator Technology, Devices and Circuits (EUROSOI 2012), Montpellier, 23-25 January) [atti di convegno-abstract]

Gnani, Elena; Gnudi, Antonio; Reggiani, Susanna; Baccarani, Giorgio, Physics -Based Analytical Model of Nanowire Tunnel-FETs, in: Proc of the 11th International Conference on Solid-State and Integrated Circuit Technology Proceedings (ICSICT 2012), 445 HOES LANE, PISCATAWAY, NJ, IEEE Press, 2012, pp. 1 - 4 (atti di: International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Xi'An, Oct. 29-Nov. 1 2012) [Contributo in Atti di convegno]

Gnani, Elena; Gnudi, Antonio; Reggiani, Susanna; Baccarani, Giorgio, Physics-Based Analytical Model of Nanowire Tunnel-FETs, in: 10th MOS-AK/GSA ESSDERC ESSCIRC Workshop, s.l, s.n, 2012, pp. 1 - 1 (atti di: 10th MOS-AK/GSA ESSDERC ESSCIRC Workshop, Bordeaux, 21 September) [atti di convegno-abstract]

S. Reggiani; G. Barone; S. Poli; M.-Y. Chuang; W. Tian, Predictive TCAD Approach for the Analysis of Hot-Carrier-Stress Degradation in Integrated STI-based LDMOS Transistors, in: Proceedings of the 2012 International Conference on Simulation of Semiconductor Processes and Devices, s.l, s.n, 2012, pp. 31 - 34 (atti di: The International Conference on Simulation of Semiconductor Processes and Devices, Denver, Colorado, 5-7 settembre 2012) [Contributo in Atti di convegno]

S. Reggiani; G. Barone; E. Gnani; A. Gnudi; S. Poli; M.-Y. Chuang; W. Tian; R. Wise, TCAD degradation modeling for LDMOS transistors, in: Proceedings of the 42nd European Solid-State Device Research Conference, s.l, s.n, 2012, pp. 185 - 188 (atti di: 42nd European Solid-State Device Research Conference (ESSDERC), Bordeaux, France, 17-21 settembre 2012) [Contributo in Atti di convegno]

Elena Gnani; Antonio Gnudi; Susanna Reggiani; Giorgio Baccarani, Theory of the Junctionless UTB SOI-FET, in: MOS-AK 2012: Over Two Decades of Enabling Compact Modeling R&D Exchange, s.l, s.n, 2012, pp. 1 - 1 (atti di: MOS-AK 2012: Over Two Decades of Enabling Compact Modeling R&D Exchange, Dresden, 26-27 April) [atti di convegno-abstract]

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