Grassi, Roberto; Gnudi, Antonio; Valerio Di, Lecce; Gnani, Elena; Reggiani, Susanna; Baccarani, Giorgio, Exploiting Negative Differential Resistance in Monolayer Graphene FETs for High Voltage Gains, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2014, 61, pp. 617 - 624 [articolo]
DI LECCE, Valerio; Grassi, Roberto; Gnudi, Antonio; Gnani, Elena; Reggiani, Susanna; Baccarani, Giorgio, Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation, in: 2014 44th European Solid State Device Research Conference (ESSDERC), Bez, R; Pavan, P; Meneghesso, G;, 2014, pp. 313 - 316 (atti di: 2014 44th European Solid State Device Research Conference (ESSDERC), Venice, Italy, Sept 22-26, 2014) [Contributo in Atti di convegno]
Maiorano, P.; Gnani, E.; Grassi, R.; Gnudi, A.; Reggiani, S.; Baccarani, G., Investigation on the electrical properties of superlattice FETs using a non-parabolic band model, «SOLID-STATE ELECTRONICS», 2014, 98, pp. 45 - 49 [articolo]
Reggiani, Susanna; Monti, Federico; G., Barone; Gnani, Elena; Gnudi, Antonio; Baccarani, Giorgio; S., Poli; M. Y., Chuang; W., Tian; R., Wise, Linear drain current degradation of STI-based LDMOS transistors under AC stress conditions, in: Proceedings of the International Symposium on Power Semiconductor Devices and ICs, 2014, pp. 193 - 196 (atti di: 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD), Waikoloa, Hawaii (USA), June 15-19, 2014) [Contributo in Atti di convegno]
Baravelli, Emanuele; Gnani, Elena; Grassi, Roberto; Gnudi, Antonio; Reggiani, Susanna; Baccarani, Giorgio, Optimization of n-and p-type TFETs integrated on the same InAs/Al xGa1-xSb technology platform, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2014, 61, pp. 178 - 185 [articolo]
Pugnaghi, Claudio; Grassi, Roberto; Gnudi, Antonio; Di Lecce, Valerio; Gnani, Elena; Reggiani, Susanna; Baccarani, Giorgio, Semianalytical quantum model for graphene field-effect transistors, «JOURNAL OF APPLIED PHYSICS», 2014, 116, Article number: 114505, pp. 1145051 - 1145059 [articolo]
Monti, Federico; Reggiani, Susanna; Barone, G.; Gnani, Elena; Gnudi, Antonio; Baccarani, Giorgio; Poli, S.; Chuang, M. Y.; Tian, W.; Varghese, D.; Wise, R., TCAD analysis of HCS degradation in LDMOS devices under AC stress conditions, in: Proceedings of the 2014 44th European Solid State Device Research Conference (ESSDERC 2014), 2014, pp. 333 - 336 (atti di: 2014 44th European Solid State Device Research Conference (ESSDERC 2014), Venice, Italy, Sept 22-26, 2014) [Contributo in Atti di convegno]
Imperiale, Ilaria; Reggiani, Susanna; Gnani, Elena; Gnudi, Antonio; Baccarani, Giorgio; Nguyen, L.; Denison, M., TCAD modeling of charge transport in HV-IC encapsulation materials, in: 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2014, pp. 450 - 453 (atti di: 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD), Waikoloa, Hawaii (USA), June 15-19, 2014) [Contributo in Atti di convegno]
Imperiale, Ilaria; Reggiani, Susanna; Gnani, Elena; Gnudi, Antonio; Baccarani, Giorgio; Nguyen, L.; Denison, M., TCAD modeling of encapsulation layer in high-voltage, high-temperature operation regime, in: Proceedings of the 2014 44th European Solid State Device Research Conference (ESSDERC 2014), 2014, pp. 325 - 328 (atti di: 44th European Solid State Device Research Conference (ESSDERC), Venice, Italy, Sept 22-26, 2014) [Contributo in Atti di convegno]
Baravelli, Emanuele; Gnani, Elena; Gnudi, Antonio; Reggiani, Susanna; Baccarani, Giorgio, TFET Inverters With n-/p-Devices on the Same Technology Platform for Low-Voltage/Low-Power Applications, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2014, 61, pp. 473 - 478 [articolo]
G. Iannaccone;G. Fiori;S. Reggiani;M. Pala, Beyond CMOS Nanoscale CMOS, in: Nanoscale CMOS, Hoboken, NJ, John Wiley and sons, Inc., 2013, pp. 443 - 470 [capitolo di libro]
BETTI BENEVENTI, Giovanni; Gnani, Elena; Gnudi, Antonio; Reggiani, Susanna; Baccarani, Giorgio, Boosting InAs TFET on-current above 1 mA/um with no leakage penalty, in: 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC), IEEE Computer Society, 2013, pp. 73 - 76 (atti di: European Solid-State Device Research Conference (ESSDERC), Bucharest, 16-20 Sept. 2013) [Contributo in Atti di convegno]
Giovanni Betti Beneventi;Elena Gnani;Antonio Gnudi;Susanna Reggiani;Giorgio Baccarani, Can Interface Traps Suppress TFET Ambipolarity?, «IEEE ELECTRON DEVICE LETTERS», 2013, 34, pp. 1557 - 1559 [articolo]
E. Baravelli;E. Gnani;R. Grassi;A. Gnudi;S. Reggiani;G. Baccarani, Complementary n- and p-type TFETs on the same InAs/Al(0.05)Ga(0.95)Sb platform, in: 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC), IEEE Computer Society, 2013, pp. 69 - 72 (atti di: European Solid-State Device Research Conference (ESSDERC), Bucharest, 16-20 Sept. 2013) [Contributo in Atti di convegno]
DI LECCE, Valerio; Grassi, Roberto; Gnudi, Antonio; Gnani, Elena; Reggiani, Susanna; Baccarani, Giorgio, DC and small-signal numerical simulation of graphene base transistor for terahertz operation, in: 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC), IEEE Computer Society, 2013, pp. 314 - 317 (atti di: European Solid-State Device Research Conference (ESSDERC), Bucharest, 16-20 Sept. 2013) [Contributo in Atti di convegno]
