Valerio Di Lecce;Roberto Grassi;Antonio Gnudi;Elena Gnani;Susanna Reggiani;Giorgio Baccarani, Graphene Base Transistors: A Simulation Study of DC and Small-Signal Operation, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2013, 60, pp. 3584 - 3591 [articolo]
Valerio Di Lecce;Roberto Grassi;Antonio Gnudi;Elena Gnani;Susanna Reggiani;Giorgio Baccarani, Graphene-Base Heterojunction Transistor: An Attractive Device for Terahertz Operation, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2013, 60, pp. 4263 - 4268 [articolo]
R. Grassi;A. Gnudi;I. Imperiale;E. Gnani;S. Reggiani;G. Baccarani, Mode space approach for tight-binding transport simulations in graphene nanoribbon field-effect transistors including phonon scattering, «JOURNAL OF APPLIED PHYSICS», 2013, 113, pp. 144506-1 - 144506-9 [articolo]
Reggiani, Susanna; Gnani, Elena; Gnudi, Antonio; Baccarani, Giorgio; Poli, Stefano; Wise, R.; Chuang, M. Y.; Tian, W.; Denison, M., Modeling and characterization of hot-carrier stress degradation in power MOSFETs, in: 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC), IEEE Computer Society, 2013, pp. 91 - 94 (atti di: European Solid-State Device Research Conference (ESSDERC), Bucharest, 16-20 Sept. 2013) [Contributo in Atti di convegno]
P. Maiorano;E. Gnani;R. Grassi;A. Gnudi;S. Reggiani;G. Baccarani, Non-parabolic band effects on the electrical properties of superlattice FETs, in: 2013 14th International Conference on Ultimate Integration on Silicon (ULIS), 2013, pp. 93 - 96 (atti di: 2013 14th International Conference on Ultimate Integration on Silicon (ULIS), Coventry; United Kingdom, 19-21 March 2013) [Contributo in Atti di convegno]
Antonio Gnudi;Susanna Reggiani;Elena Gnani;Giorgio Baccarani, Semianalytical Model of the Subthreshold Current in Short-Channel Junctionless Symmetric Double-Gate Field-Effect Transistors, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2013, 60, pp. 1342 - 1348 [articolo]
S. Reggiani;G. Barone;E. Gnani;A. Gnudi;G. Baccarani;S. Poli;M.-Y. Chuang;W. Tian;R. Wise, TCAD predictions of linear and saturation HCS degradation in STI-based LDMOS transistors stressed in the impact-ionization regime, in: 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2013, pp. 375 - 378 (atti di: 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD), Kanazawa; Japan, 26-30 May 2013) [Contributo in Atti di convegno]
Susanna Reggiani;Gaetano Barone;Stefano Poli;Elena Gnani;Antonio Gnudi;Giorgio Baccarani;Ming-Yeh Chuang;Weidong Tian;Rick Wise, TCAD Simulation of Hot-Carrier and Thermal Degradation in STI-LDMOS Transistors, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2013, 60, pp. 691 - 698 [articolo]
A. Gnudi; S. Reggiani; E. Gnani; G. Baccarani, Analysis of threshold voltage variability due to random dopant fluctuations in junctionless FETs, «IEEE ELECTRON DEVICE LETTERS», 2012, 33, pp. 336 - 338 [articolo]
A. Gnudi; S. Reggiani; E. Gnani; G. Baccarani, Analytical Model for the Threshold Voltage Variability due to Random Dopant Fluctuations in Junctionless FETs, in: Proceedings of the 2012 International Conference on Simulation of Semiconductor Processes and Devices, s.l, s.n, 2012, pp. 117 - 120 (atti di: The International Conference on Simulation of Semiconductor Processes and Devices, Denver, Colorado, 5-7 settembre 2012) [Contributo in Atti di convegno]
E. Gnani; S. Reggiani; A. Gnudi; G. Baccarani, Drain-conductance optimization in nanowire TFETs, in: Proceedings of the 42.nd European Solid-State Device Research Conference, PISCATAWAY, NJ, IEEE, 2012, pp. 105 - 108 (atti di: European Solid-State Device Research Conference (ESSDERC 2012), Bordeaux, 18-20 September) [Contributo in Atti di convegno]
E. Gnani; A. Gnudi; S. Reggiani; G. Baccarani; N. Shen; N. Singh; G.Q. Lo; D.L. Kwong, Numerical investigation on the junctionless nanowire FET, «SOLID-STATE ELECTRONICS», 2012, 71, pp. 13 - 18 [articolo]
S. Poli; S. Reggiani; R.K. Sharma; M. Denison; E. Gnani; A. Gnudi; G. Baccarani, Optimization and Analysis of the Dual n/p-LDMOS Device, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2012, 59, pp. 745 - 753 [articolo]
E. Gnani; A. Gnudi; S. Reggiani; G. Baccarani, Physical Model of the Junctionless UTB SOI-FET, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2012, 59, pp. 941 - 948 [articolo]
Gnani, Elena; Reggiani, Susanna; Gnudi, Antonio; Baccarani, Giorgio, Physical Model of the Junctionless UTB SOI-FET, in: Proc. of the 8th European Workshop on Silicon on Insulator Technology, Devices and Circuits (EUROSOI 2012), s.l, s.n, 2012, 59, pp. 941 - 948 (atti di: 8th European Workshop on Silicon on Insulator Technology, Devices and Circuits (EUROSOI 2012), Montpellier, 23-25 January) [atti di convegno-abstract]
