Gnani, Elena; Gnudi, Antonio; Reggiani, Susanna; Baccarani, Giorgio, Physics -Based Analytical Model of Nanowire Tunnel-FETs, in: Proc of the 11th International Conference on Solid-State and Integrated Circuit Technology Proceedings (ICSICT 2012), 445 HOES LANE, PISCATAWAY, NJ, IEEE Press, 2012, pp. 1 - 4 (atti di: International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Xi'An, Oct. 29-Nov. 1 2012) [Contributo in Atti di convegno]
Gnani, Elena; Gnudi, Antonio; Reggiani, Susanna; Baccarani, Giorgio, Physics-Based Analytical Model of Nanowire Tunnel-FETs, in: 10th MOS-AK/GSA ESSDERC ESSCIRC Workshop, s.l, s.n, 2012, pp. 1 - 1 (atti di: 10th MOS-AK/GSA ESSDERC ESSCIRC Workshop, Bordeaux, 21 September) [atti di convegno-abstract]
S. Reggiani; G. Barone; S. Poli; M.-Y. Chuang; W. Tian, Predictive TCAD Approach for the Analysis of Hot-Carrier-Stress Degradation in Integrated STI-based LDMOS Transistors, in: Proceedings of the 2012 International Conference on Simulation of Semiconductor Processes and Devices, s.l, s.n, 2012, pp. 31 - 34 (atti di: The International Conference on Simulation of Semiconductor Processes and Devices, Denver, Colorado, 5-7 settembre 2012) [Contributo in Atti di convegno]
S. Reggiani; G. Barone; E. Gnani; A. Gnudi; S. Poli; M.-Y. Chuang; W. Tian; R. Wise, TCAD degradation modeling for LDMOS transistors, in: Proceedings of the 42nd European Solid-State Device Research Conference, s.l, s.n, 2012, pp. 185 - 188 (atti di: 42nd European Solid-State Device Research Conference (ESSDERC), Bordeaux, France, 17-21 settembre 2012) [Contributo in Atti di convegno]
Elena Gnani; Antonio Gnudi; Susanna Reggiani; Giorgio Baccarani, Theory of the Junctionless UTB SOI-FET, in: MOS-AK 2012: Over Two Decades of Enabling Compact Modeling R&D Exchange, s.l, s.n, 2012, pp. 1 - 1 (atti di: MOS-AK 2012: Over Two Decades of Enabling Compact Modeling R&D Exchange, Dresden, 26-27 April) [atti di convegno-abstract]
E. Gnani; S. Reggiani; A. Gnudi; G. Baccarani, A Quasi-Analytical Model of the Junctionless Nanowire Field-Eect Transistor, in: Proc. of the International Semiconductor Device Research Symposium 2011 (ISDRS 2011), s.l, s.n, 2011, pp. 1 - 2 (atti di: International Semiconductor Device Research Symposium 2011 (ISDRS 2011), College Park, Maryland, 7-9 December) [atti di convegno-abstract]
E. Gnani; P. Maiorano; S. Reggiani; A. Gnudi; G. Baccarani, An investigation on steep-slope and low-power nanowire FETs, in: Proceedings of the 41st European Solid-State Device Research Conference, Piscataway, IEEE Publishing Services, 2011, pp. 299 - 302 (atti di: European Solid-State Device Research Conference (ESSDERC 2011), Helsinki, 13-15 September 2011) [Contributo in Atti di convegno]
S. Poli; S. Reggiani; M. Denison; G. Baccarani; E. Gnani; A. Gnudi; S. Pendharkar; R. Wise, Full Understanding of Hot-Carrier-Induced Degradation in STI-based LDMOS transistors in the Impact-Ionization Operating Regime, in: 23th International Symposium on Power Semiconductor Devices and ICs, Piscataway, IEEE Publishing Services, 2011, pp. 152 - 155 (atti di: (ISPSD 2011)., San Diego CA, 23-26 May, 2011) [Contributo in Atti di convegno]
V. Passi; F. Ravaux; E. Dubois; S. Clavaguera; A. Carella; C. Celle;
J. Simonato; L. Silvestri; S. Reggiani; D. Vuillaume; J. Raskin, High Gain and Fast Detection of Warfare Agents Using Back-Gated Silicon-Nanowired MOSFETs, «IEEE ELECTRON DEVICE LETTERS», 2011, 32, pp. 976 - 978 [articolo]
I. Imperiale; A. Gnudi; E. Gnani; S. Reggiani; G. Baccarani, High-frequency analog GNR-FET design criteria, in: Proceedings of the 41st European Solid-State Device Research Conference, Piscataway, IEEE Publishing Services, 2011, pp. 303 - 306 (atti di: European Solid-State Device Research Conference, Helsinki, 13-15 September 2011) [Contributo in Atti di convegno]
S. Poli; S. Reggiani; G. Baccarani; E. Gnani; A. Gnudi; M. Denison; S. Pendharkar; R. Wise, Hot-carrier stress induced degradation in Multi-STI-Finger LDMOS: An experimental and numerical insight, «SOLID-STATE ELECTRONICS», 2011, 65-66, pp. 57 - 63 [articolo]
E. Gnani; P. Maiorano; S. Reggiani; A. Gnudi; G. Baccarani, Investigation on Superlattice Heterostructures for Steep-Slope Nanowire FETs, in: 69th Device Research Conference Digest, Piscataway, IEEE Publishing Services, 2011, pp. 201 - 202 (atti di: Device Research Conference (DRC), Santa Barbara CA, 20-22 June) [atti di convegno-abstract]
R. Grassi; A. Gnudi; E. Gnani; S. Reggiani; G. Baccarani, Mode Space Approach for Tight-Binding Transport Simulation in Graphene Nanoribbon FETs, «IEEE TRANSACTIONS ON NANOTECHNOLOGY», 2011, 10, pp. 371 - 378 [articolo]
E. Gnani; A. Gnudi; S. Reggiani; G. Baccarani; N. Shen; N. Singh; G.Q. Lo; D.L. Kwong, Numerical Investigation on the Junctionless Nanowire FET, in: Proceedings of the 9th International Conference on Ultimate Integration of Silicon (ULIS 2011), pp. 1-4, Cork, 2011, Piscataway, IEEE Publishing Services, 2011, pp. 1 - 4 (atti di: 9th International Conference on Ultimate Integration of Silicon (ULIS 2011), Cork, Ireland, 14-16 March) [Contributo in Atti di convegno]
Gnani, Elena; Maiorano, Pasquale; Reggiani, Susanna; Gnudi, Antonio; Baccarani, Giorgio, Performance Limits of Superlattice-Based Steep-Slope Nanowire FETs, in: Technical Digest of 2011 International Electron Devices Meeting, PISCATAWAY, NJ 08855-1331, IEEE, 2011, pp. 5.1.1 - 5.1.4 [capitolo di libro]
