Carapezzi S.; Reggiani S.; Gnani E.; Gnudi A., TCAD Simulation Framework of Gas Desorption in CNT FET NO2Sensors, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2020, 67, Article number: 9199415, pp. 4682 - 4686 [articolo]Open Access
Giuliano F.; Magnone P.; Pistollato S.; Tallarico A.N.; Reggiani S.; Fiegna C.; Depetro R.; Rossetti M.; Croce G., TCAD simulation of hot-carrier stress degradation in split-gate n-channel STI-LDMOS transistors, «MICROELECTRONICS RELIABILITY», 2020, 109, Article number: 113643, pp. 1 - 5 [articolo]Open Access
Luigi Balestra, Susanna Reggiani, Antonio Gnudi, Elena Gnani, Jagoda Dobrzynska, Jan Vobecký, TCAD Study of VLD Termination in Large-Area Power Devices Featuring a DLC Passivation, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2020, 67, Article number: 9166703, pp. 4645 - 4648 [articolo]Open Access
Cornigli, D.; Tallarico, A. N.; Reggiani, S.; Fiegna, C.; Sangiorgi, E.; Sanchez, L.; Valdivieso, C.; Consentino, G.; Crupi, F., Characterization and Modeling of BTI in SiC MOSFETs, in: European Solid-State Device Research Conference, Editions Frontieres, «PROCEEDINGS OF THE EUROPEAN SOLID STATE DEVICE RESEARCH CONFERENCE», 2019, 2019-, pp. 82 - 85 (atti di: 49th European Solid-State Device Research Conference, ESSDERC 2019, Cracow, POLAND, SEP 23-26, 2019) [Contributo in Atti di convegno]Open Access
Gnani E.; Malago P.; Reggiani S.; Gnudi A., New DG FeFET architecture with enhanced SS and non-hysteretic behaviour, in: 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019, Institute of Electrical and Electronics Engineers Inc., 2019, pp. 1 - 4 (atti di: 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019, fra, 2019) [Contributo in Atti di convegno]
Balestra L.; Reggiani S.; Gnudi A.; Gnani E.; Baccarani G.; Dobrzynska J.; Vobecky J., Numerical investigation of the leakage current and blocking capabilities of high-power diodes with doped dlc passivation layers, in: International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, Institute of Electrical and Electronics Engineers Inc., 2019, 2019-, pp. 1 - 4 (atti di: 24th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019, Palazzo di Toppo Wassermann, ita, 2019) [Contributo in Atti di convegno]
Carapezzi S.; Reggiani S.; Gnani E.; Gnudi A., On the electron mobility of strained InGaAs channel MOSFETs, in: European Solid-State Device Research Conference, Editions Frontieres, «PROCEEDINGS OF THE EUROPEAN SOLID STATE DEVICE RESEARCH CONFERENCE», 2019, 2019-, pp. 266 - 269 (atti di: 49th European Solid-State Device Research Conference, ESSDERC 2019, pol, 2019) [Contributo in Atti di convegno]
F. Giuliano, A. N. Tallarico, S. Reggiani, A. Gnudi, E. Sangiorgi, C. Fiegna, M. Rossetti, A. Molfese, S. Manzini, R. Depetro, G. Croce, TCAD predictions of hot-electron injection in p-type LDMOS transistors, in: ESSDERC 2019 49th European Solid State Device Research Conference (ESSDERC), 2019, pp. 86 - 89 (atti di: ESSDERC 2019, Cracovia, 23-26/09/2019) [Contributo in Atti di convegno]
Gnani, E.; Visciarelli, M.; Gnudi, A.; Reggiani, S.; Baccarani, G., TFET inverter static and transient performances in presence of traps and localized strain, «SOLID-STATE ELECTRONICS», 2019, 159, pp. 38 - 42 [articolo]
Giuseppe Consentino, Esteban Guevara, Luis Sanchez, Felice Crupi, Susanna Reggiani, Gaudenzio Meneghesso, Threshold Voltage Instability in SiC Power MOSFETs, in: PCIM Europe Conference Proceedings 2019, VDE VERLAG GMBH · Berlin · Offenbach, 2019, pp. 34 - 37 (atti di: PCIM Europe 2019; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Nuremberg, Germany, 7 – 9 May 2019) [Contributo in Atti di convegno]Open Access
Cornigli, Davide*; Reggiani, Susanna; Gnudi, Antonio; Gnani, Elena; Baccarani, Giorgio; Fabiani, Davide; Varghese, Dhanoop; Tuncer, Enis; Krishnan, Srikanth; Nguyen, Luu, Characterization of dielectric properties and conductivity in encapsulation materials with high insulating filler contents, «IEEE TRANSACTIONS ON DIELECTRICS AND ELECTRICAL INSULATION», 2018, 25, Article number: 8561350, pp. 2421 - 2428 [articolo]Open Access
Cornigli, D.*; Reggiani, S.; Gnudi, A.; Gnani, E.; Baccarani, G.; Fabiani, D.; Varghese, D.; Tuncer, E.; Krishnan, S.; Nguyen, L., Electrical characterization of epoxy-based molding compounds for next generation HV ICs in presence of moisture, «MICROELECTRONICS RELIABILITY», 2018, 88-90, pp. 752 - 755 [articolo]Open Access
Tallarico, Andrea Natale*; Reggiani, Susanna; Depetro, Riccardo; Manzini, Stefano; Torti, Andrea Mario; Croce, Giuseppe; Sangiorgi, Enrico; Fiegna, Claudio, Hot-carrier degradation in power LDMOS: Drain bias dependence and lifetime evaluation, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2018, 65, Article number: 8458210, pp. 5195 - 5198 [articolo]Open Access
Tallarico, Andrea Natale*; Reggiani, Susanna; Depetro, Riccardo; Torti, Andrea Mario; Croce, Giuseppe; Sangiorgi, Enrico; Fiegna, Claudio, Hot-Carrier Degradation in Power LDMOS: Selective LOCOS-Versus STI-Based Architecture, «IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY», 2018, 6, Article number: 8255610, pp. 219 - 226 [articolo]Open Access
Reggiani, S.; Rossetti, M.; Gnudi, A.*; Tallarico, A.N.; Molfese, A.; Manzini, S.; Depetro, R.; Croce, G.; Sangiorgi, E.; Fiegna, C., TCAD investigation on hot-electron injection in new-generation technologies, «MICROELECTRONICS RELIABILITY», 2018, 88-90, pp. 1090 - 1093 [articolo]Open Access
