Gnani E.; Visciarelli M.; Gnudi A.; Reggiani S.; Baccarani G., TFET inverter static and transient performances in presence of traps and localized strain, «SOLID-STATE ELECTRONICS», 2019, 159, pp. 38 - 42 [articolo]
Giuseppe Consentino, Esteban Guevara, Luis Sanchez, Felice Crupi, Susanna Reggiani, Gaudenzio Meneghesso, Threshold Voltage Instability in SiC Power MOSFETs, in: PCIM Europe Conference Proceedings 2019, VDE VERLAG GMBH · Berlin · Offenbach, 2019, pp. 34 - 37 (atti di: PCIM Europe 2019; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Nuremberg, Germany, 7 – 9 May 2019) [Contributo in Atti di convegno]Open Access
Cornigli, Davide*; Reggiani, Susanna; Gnudi, Antonio; Gnani, Elena; Baccarani, Giorgio; Fabiani, Davide; Varghese, Dhanoop; Tuncer, Enis; Krishnan, Srikanth; Nguyen, Luu, Characterization of dielectric properties and conductivity in encapsulation materials with high insulating filler contents, «IEEE TRANSACTIONS ON DIELECTRICS AND ELECTRICAL INSULATION», 2018, 25, Article number: 8561350, pp. 2421 - 2428 [articolo]Open Access
Cornigli, D.*; Reggiani, S.; Gnudi, A.; Gnani, E.; Baccarani, G.; Fabiani, D.; Varghese, D.; Tuncer, E.; Krishnan, S.; Nguyen, L., Electrical characterization of epoxy-based molding compounds for next generation HV ICs in presence of moisture, «MICROELECTRONICS RELIABILITY», 2018, 88-90, pp. 752 - 755 [articolo]Open Access
Tallarico, Andrea Natale*; Reggiani, Susanna; Depetro, Riccardo; Manzini, Stefano; Torti, Andrea Mario; Croce, Giuseppe; Sangiorgi, Enrico; Fiegna, Claudio, Hot-carrier degradation in power LDMOS: Drain bias dependence and lifetime evaluation, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2018, 65, Article number: 8458210, pp. 5195 - 5198 [articolo]Open Access
Tallarico, Andrea Natale*; Reggiani, Susanna; Depetro, Riccardo; Torti, Andrea Mario; Croce, Giuseppe; Sangiorgi, Enrico; Fiegna, Claudio, Hot-Carrier Degradation in Power LDMOS: Selective LOCOS-Versus STI-Based Architecture, «IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY», 2018, 6, Article number: 8255610, pp. 219 - 226 [articolo]Open Access
Reggiani, S.; Rossetti, M.; Gnudi, A.*; Tallarico, A.N.; Molfese, A.; Manzini, S.; Depetro, R.; Croce, G.; Sangiorgi, E.; Fiegna, C., TCAD investigation on hot-electron injection in new-generation technologies, «MICROELECTRONICS RELIABILITY», 2018, 88-90, pp. 1090 - 1093 [articolo]Open Access
Reggiani, S.; Balestra, L.; Gnudi, A.*; Gnani, E.; Baccarani, G.; Dobrzynska, J.; Vobecký, J.; Tosi, C., TCAD study of DLC coatings for large-area high-power diodes, «MICROELECTRONICS RELIABILITY», 2018, 88-90, pp. 1094 - 1097 [articolo]
Gnani, E.; Gnudi, A.; Reggiani, S.; Baccarani, G.; Visciarelli, M., TFET-based inverter performance in the presence of traps and localized strain, in: 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018, Institute of Electrical and Electronics Engineers Inc., 2018, 2018-, pp. 1 - 4 (atti di: 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018, esp, 2018) [Contributo in Atti di convegno]
Stefania Carapezzi; Sebastian Eberle; Susanna Reggiani; Elena Gnani; Cosmin Roman; Christofer Hierold; Antonio Gnudi, 3D TCAD modeling of NO2CNT FET sensors, in: 48th European Solid-State Device Research Conference (ESSDERC) : Dresden, 3-6 september 2018, Piscataway ; Red Hook ; Gif-sur-Yvette, Institute of Electrical and Electronics Engineers ( IEEE ) ; Curran Associates, «PROCEEDINGS OF THE EUROPEAN SOLID STATE DEVICE RESEARCH CONFERENCE», 2018, CFP18543-POD, pp. 222 - 225 (atti di: 48th European Solid-State Device Research Conference, ESSDERC 2018, Dresden, 3 - 6 Settembre 2018) [Contributo in Atti di convegno]Open Access
Visciarelli, Michele; Gnani, Elena; Gnudi, Antonio; Reggiani, Susanna; Baccarani, Giorgio, Design guidelines for GaSb/InAs TFET exploiting strain and device size, «SOLID-STATE ELECTRONICS», 2017, 129, pp. 157 - 162 [articolo]
Mikael, Östling; Ming, Liu; Sam, Vaziri; Susanna, Reggiani, Exciting Times for Our Journal, «IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY», 2017, 5, pp. 430 - 431 [replica/breve intervento]
Visciarelli, Michele; Gnani, Elena; Gnudi, Antonio; Reggiani, Susanna; Baccarani, Giorgio, Impact of Traps and Strain on Optimized n- and p-Type TFETs Integrated on the Same InAs/AlGaSb Technology Platform, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2017, 64, Article number: 7947114, pp. 3108 - 3113 [articolo]
Visciarelli, Michele; Gnani, Elena; Gnudi, Antonio; Reggiani, Susanna; Baccarani, Giorgio, Investigation of the combined effect of traps and strain on optimized n- and p-type TFETs, in: Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 2017, pp. 13 - 16 (atti di: 2017 Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017, grc, 2017) [Contributo in Atti di convegno]
Tallarico, A. N.; Reggiani, S.; Magnone, P.; Croce, G.; Depetro, R.; Gattari, P.; Sangiorgi, E.; Fiegna, C., Investigation of the hot carrier degradation in power LDMOS transistors with customized thick oxide, «MICROELECTRONICS RELIABILITY», 2017, 76-77, pp. 475 - 479 [articolo]Open Access
