Foto del docente

Susanna Reggiani

Professoressa ordinaria

Dipartimento di Ingegneria dell'Energia Elettrica e dell'Informazione "Guglielmo Marconi"

Settore scientifico disciplinare: ING-INF/01 ELETTRONICA

Coordinatrice del Corso di Laurea in Ingegneria elettronica e telecomunicazioni

Pubblicazioni

Gnani E.; Malago P.; Reggiani S.; Gnudi A., New DG FeFET architecture with enhanced SS and non-hysteretic behaviour, in: 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019, Institute of Electrical and Electronics Engineers Inc., 2019, pp. 1 - 4 (atti di: 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019, fra, 2019) [Contributo in Atti di convegno]

Balestra L.; Reggiani S.; Gnudi A.; Gnani E.; Baccarani G.; Dobrzynska J.; Vobecky J., Numerical investigation of the leakage current and blocking capabilities of high-power diodes with doped dlc passivation layers, in: International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, Institute of Electrical and Electronics Engineers Inc., 2019, 2019-, pp. 1 - 4 (atti di: 24th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019, Palazzo di Toppo Wassermann, ita, 2019) [Contributo in Atti di convegno]

Carapezzi S.; Reggiani S.; Gnani E.; Gnudi A., On the electron mobility of strained InGaAs channel MOSFETs, in: European Solid-State Device Research Conference, Editions Frontieres, «PROCEEDINGS OF THE EUROPEAN SOLID STATE DEVICE RESEARCH CONFERENCE», 2019, 2019-, pp. 266 - 269 (atti di: 49th European Solid-State Device Research Conference, ESSDERC 2019, pol, 2019) [Contributo in Atti di convegno]

F. Giuliano, A. N. Tallarico, S. Reggiani, A. Gnudi, E. Sangiorgi, C. Fiegna, M. Rossetti, A. Molfese, S. Manzini, R. Depetro, G. Croce, TCAD predictions of hot-electron injection in p-type LDMOS transistors, in: ESSDERC 2019 49th European Solid State Device Research Conference (ESSDERC), 2019, pp. 86 - 89 (atti di: ESSDERC 2019, Cracovia, 23-26/09/2019) [Contributo in Atti di convegno]

Gnani E.; Visciarelli M.; Gnudi A.; Reggiani S.; Baccarani G., TFET inverter static and transient performances in presence of traps and localized strain, «SOLID-STATE ELECTRONICS», 2019, 159, pp. 38 - 42 [articolo]

Giuseppe Consentino, Esteban Guevara, Luis Sanchez, Felice Crupi, Susanna Reggiani, Gaudenzio Meneghesso, Threshold Voltage Instability in SiC Power MOSFETs, in: PCIM Europe Conference Proceedings 2019, VDE VERLAG GMBH · Berlin · Offenbach, 2019, pp. 34 - 37 (atti di: PCIM Europe 2019; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Nuremberg, Germany, 7 – 9 May 2019) [Contributo in Atti di convegno]Open Access

Stefania Carapezzi; Sebastian Eberle; Susanna Reggiani; Elena Gnani; Cosmin Roman; Christofer Hierold; Antonio Gnudi, 3D TCAD modeling of NO2CNT FET sensors, in: 48th European Solid-State Device Research Conference (ESSDERC) : Dresden, 3-6 september 2018, Piscataway ; Red Hook ; Gif-sur-Yvette, Institute of Electrical and Electronics Engineers ( IEEE ) ; Curran Associates, «PROCEEDINGS OF THE EUROPEAN SOLID STATE DEVICE RESEARCH CONFERENCE», 2018, CFP18543-POD, pp. 222 - 225 (atti di: 48th European Solid-State Device Research Conference, ESSDERC 2018, Dresden, 3 - 6 Settembre 2018) [Contributo in Atti di convegno]Open Access

Cornigli, Davide*; Reggiani, Susanna; Gnudi, Antonio; Gnani, Elena; Baccarani, Giorgio; Fabiani, Davide; Varghese, Dhanoop; Tuncer, Enis; Krishnan, Srikanth; Nguyen, Luu, Characterization of dielectric properties and conductivity in encapsulation materials with high insulating filler contents, «IEEE TRANSACTIONS ON DIELECTRICS AND ELECTRICAL INSULATION», 2018, 25, Article number: 8561350, pp. 2421 - 2428 [articolo]Open Access

Cornigli, D.*; Reggiani, S.; Gnudi, A.; Gnani, E.; Baccarani, G.; Fabiani, D.; Varghese, D.; Tuncer, E.; Krishnan, S.; Nguyen, L., Electrical characterization of epoxy-based molding compounds for next generation HV ICs in presence of moisture, «MICROELECTRONICS RELIABILITY», 2018, 88-90, pp. 752 - 755 [articolo]Open Access

Tallarico, Andrea Natale*; Reggiani, Susanna; Depetro, Riccardo; Torti, Andrea Mario; Croce, Giuseppe; Sangiorgi, Enrico; Fiegna, Claudio, Hot-Carrier Degradation in Power LDMOS: Selective LOCOS-Versus STI-Based Architecture, «IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY», 2018, 6, Article number: 8255610, pp. 219 - 226 [articolo]Open Access

Tallarico, Andrea Natale*; Reggiani, Susanna; Depetro, Riccardo; Manzini, Stefano; Torti, Andrea Mario; Croce, Giuseppe; Sangiorgi, Enrico; Fiegna, Claudio, Hot-carrier degradation in power LDMOS: Drain bias dependence and lifetime evaluation, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2018, 65, Article number: 8458210, pp. 5195 - 5198 [articolo]Open Access

Reggiani, S.; Rossetti, M.; Gnudi, A.*; Tallarico, A.N.; Molfese, A.; Manzini, S.; Depetro, R.; Croce, G.; Sangiorgi, E.; Fiegna, C., TCAD investigation on hot-electron injection in new-generation technologies, «MICROELECTRONICS RELIABILITY», 2018, 88-90, pp. 1090 - 1093 [articolo]Open Access

Reggiani, S.; Balestra, L.; Gnudi, A.*; Gnani, E.; Baccarani, G.; Dobrzynska, J.; Vobecký, J.; Tosi, C., TCAD study of DLC coatings for large-area high-power diodes, «MICROELECTRONICS RELIABILITY», 2018, 88-90, pp. 1094 - 1097 [articolo]

Gnani, E.; Gnudi, A.; Reggiani, S.; Baccarani, G.; Visciarelli, M., TFET-based inverter performance in the presence of traps and localized strain, in: 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018, Institute of Electrical and Electronics Engineers Inc., 2018, 2018-, pp. 1 - 4 (atti di: 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018, esp, 2018) [Contributo in Atti di convegno]

Visciarelli, Michele; Gnani, Elena; Gnudi, Antonio; Reggiani, Susanna; Baccarani, Giorgio, Design guidelines for GaSb/InAs TFET exploiting strain and device size, «SOLID-STATE ELECTRONICS», 2017, 129, pp. 157 - 162 [articolo]

Ultimi avvisi

Al momento non sono presenti avvisi.