Reggiani, Susanna; Balestra, Luigi; Gnudi, Antonio; Gnani, Elena; Baccarani, Giorgio; Dobrzynska, Jagoda; Vobecky, Jan; Tosi, Carlo, TCAD Investigation of Differently-Doped DLC Passivation for Large-Area High-Power Diodes, «IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS», 2021, 9, Article number: 8801920, pp. 2155 - 2162 [articolo]
Carangelo G.; Reggiani S.; Consentino G.; Crupi F.; Meneghesso G., TCAD modeling of bias temperature instabilities in SiC MOSFETs, «SOLID-STATE ELECTRONICS», 2021, 185, Article number: 108067, pp. 1 - 5 [articolo]Open Access
Sanchez L.; Acurio E.; Crupi F.; Reggiani S.; Meneghesso G., BTI saturation and universal relaxation in SiC power MOSFETs, «MICROELECTRONICS RELIABILITY», 2020, 109, Article number: 113642, pp. 1 - 7 [articolo]
Ahn W.; Cornigli D.; Varghese D.; Nguyen L.; Krishnan S.; Reggiani S.; Alam M.A., Effects of Filler Configuration and Moisture on Dissipation Factor and Critical Electric Field of Epoxy Composites for HV-ICs Encapsulation, «IEEE TRANSACTIONS ON COMPONENTS, PACKAGING, AND MANUFACTURING TECHNOLOGY», 2020, 10, Article number: 9163336, pp. 1534 - 1541 [articolo]
Carapezzi S.; Reggiani S.; Gnani E.; Gnudi A., Electron mobility of strained InGaAs long-channel MOSFETs: From scattering rates to TCAD model, «SOLID-STATE ELECTRONICS», 2020, 172, Article number: 107902, pp. 1 - 7 [articolo]
Tallarico A.N.; Reggiani S.; Depetro R.; Croce G.; Sangiorgi E.; Fiegna C., Full Understanding of Hot Electrons and Hot/Cold Holes in the Degradation of p-channel Power LDMOS Transistors, in: 2020 IEEE International Reliability Physics Symposium Proceedings (IRPS), Piscatawey, Institute of Electrical and Electronics Engineers Inc., «IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS», 2020, 2020, pp. 1 - 5 (atti di: 2020 IEEE International Reliability Physics Symposium, IRPS 2020, USA, E. NETWORK, 28.04-30.05.2020) [Contributo in Atti di convegno]Open Access
Gnani E.; Malago P.; Gnudi A.; Reggiani S., New DG FeFET topology with enhanced SS and non-hysteretic behavior, «SOLID-STATE ELECTRONICS», 2020, 168, Article number: 107727, pp. 107727 - 107731 [articolo]
Carapezzi S.; Reggiani S.; Gnani E.; Gnudi A., TCAD Simulation Framework of Gas Desorption in CNT FET NO2Sensors, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2020, 67, Article number: 9199415, pp. 4682 - 4686 [articolo]
Giuliano F.; Magnone P.; Pistollato S.; Tallarico A.N.; Reggiani S.; Fiegna C.; Depetro R.; Rossetti M.; Croce G., TCAD simulation of hot-carrier stress degradation in split-gate n-channel STI-LDMOS transistors, «MICROELECTRONICS RELIABILITY», 2020, 109, Article number: 113643, pp. 1 - 5 [articolo]Open Access
Luigi Balestra, Susanna Reggiani, Antonio Gnudi, Elena Gnani, Jagoda Dobrzynska, Jan Vobecký, TCAD Study of VLD Termination in Large-Area Power Devices Featuring a DLC Passivation, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2020, 67, pp. 4645 - 4648 [articolo]
Cornigli D.; Tallarico A.N.; Reggiani S.; Fiegna C.; Sangiorgi E.; Sanchez L.; Valdivieso C.; Consentino G.; Crupi F., Characterization and Modeling of BTI in SiC MOSFETs, in: European Solid-State Device Research Conference, Editions Frontieres, «PROCEEDINGS OF THE EUROPEAN SOLID STATE DEVICE RESEARCH CONFERENCE», 2019, 2019-, pp. 82 - 85 (atti di: 49th European Solid-State Device Research Conference, ESSDERC 2019, Cracow, POLAND, SEP 23-26, 2019) [Contributo in Atti di convegno]Open Access
Gnani E.; Malago P.; Reggiani S.; Gnudi A., New DG FeFET architecture with enhanced SS and non-hysteretic behaviour, in: 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019, Institute of Electrical and Electronics Engineers Inc., 2019, pp. 1 - 4 (atti di: 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019, fra, 2019) [Contributo in Atti di convegno]
Balestra L.; Reggiani S.; Gnudi A.; Gnani E.; Baccarani G.; Dobrzynska J.; Vobecky J., Numerical investigation of the leakage current and blocking capabilities of high-power diodes with doped dlc passivation layers, in: International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, Institute of Electrical and Electronics Engineers Inc., 2019, 2019-, pp. 1 - 4 (atti di: 24th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019, Palazzo di Toppo Wassermann, ita, 2019) [Contributo in Atti di convegno]
Carapezzi S.; Reggiani S.; Gnani E.; Gnudi A., On the electron mobility of strained InGaAs channel MOSFETs, in: European Solid-State Device Research Conference, Editions Frontieres, «PROCEEDINGS OF THE EUROPEAN SOLID STATE DEVICE RESEARCH CONFERENCE», 2019, 2019-, pp. 266 - 269 (atti di: 49th European Solid-State Device Research Conference, ESSDERC 2019, pol, 2019) [Contributo in Atti di convegno]
F. Giuliano, A. N. Tallarico, S. Reggiani, A. Gnudi, E. Sangiorgi, C. Fiegna, M. Rossetti, A. Molfese, S. Manzini, R. Depetro, G. Croce, TCAD predictions of hot-electron injection in p-type LDMOS transistors, in: ESSDERC 2019 49th European Solid State Device Research Conference (ESSDERC), 2019, pp. 86 - 89 (atti di: ESSDERC 2019, Cracovia, 23-26/09/2019) [Contributo in Atti di convegno]
