Foto del docente

Susanna Reggiani

Full Professor

Department of Electrical, Electronic, and Information Engineering "Guglielmo Marconi"

Academic discipline: ING-INF/01 Electronic Engineering

Director of First Cycle Degree in Electronics and Telecommunications Engineering

Publications

Mikael, Östling; Ming, Liu; Sam, Vaziri; Susanna, Reggiani, Exciting Times for Our Journal, «IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY», 2017, 5, pp. 430 - 431 [Comment or similar]

Visciarelli, Michele; Gnani, Elena; Gnudi, Antonio; Reggiani, Susanna; Baccarani, Giorgio, Impact of Traps and Strain on Optimized n- and p-Type TFETs Integrated on the Same InAs/AlGaSb Technology Platform, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2017, 64, Article number: 7947114 , pp. 3108 - 3113 [Scientific article]

Visciarelli, Michele; Gnani, Elena; Gnudi, Antonio; Reggiani, Susanna; Baccarani, Giorgio, Investigation of the combined effect of traps and strain on optimized n- and p-type TFETs, in: Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 2017, pp. 13 - 16 (atti di: 2017 Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017, grc, 2017) [Contribution to conference proceedings]

Tallarico, A. N.; Reggiani, S.; Magnone, P.; Croce, G.; Depetro, R.; Gattari, P.; Sangiorgi, E.; Fiegna, C., Investigation of the hot carrier degradation in power LDMOS transistors with customized thick oxide, «MICROELECTRONICS RELIABILITY», 2017, 76-77, pp. 475 - 479 [Scientific article]Open Access

Selmi, L.; Caruso, E.; Carapezzi, S.; Visciarelli, M.; Gnani, E.; Zagni, N.; Pavan, P.; Palestri, P.; Esseni, D.; Gnudi, A.; Reggiani, S.; Puglisi, F.M.; Verzellesi, G., Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD, in: Technical Digest - International Electron Devices Meeting, IEDM, Institute of Electrical and Electronics Engineers Inc., 2017, pp. 13.4.1 - 13.4.4 (atti di: 63rd IEEE International Electron Devices Meeting, IEDM 2017, USA, 2017) [Contribution to conference proceedings]

Imperiale, Ilaria; Reggiani, Susanna; Pavarese, Giuseppe; Gnani, Elena; Gnudi, Antonio; Baccarani, Giorgio; Ahn, Woojin; Alam, Muhammad A.; Varghese, Dhanoop; Hernandez-Luna, Alejandro; Nguyen, Luu; Krishnan, Srikanth, Role of the insulating fillers in the encapsulation material on the lateral charge spreading in HV-ICs, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2017, 64, Article number: 7820058 , pp. 1209 - 1216 [Scientific article]

Carapezzi, Stefania; Caruso, Enrico; Gnudi, Antonio; Palestri, Pierpaolo; Reggiani, Susanna; Gnani, Elena, TCAD Mobility Model of III-V Short-Channel Double-Gate FETs Including Ballistic Corrections, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2017, 64, Article number: 8070999 , pp. 4882 - 4888 [Scientific article]

Visciarelli, Michele; Gnudi, Antonio; Gnani, Elena; Reggiani, Susanna, A full-quantum simulation study of InGaAs NW MOSFETs including interface traps, in: European Solid-State Device Research Conference, Editions Frontieres, 2016, 2016-, pp. 180 - 183 (atti di: 46th European Solid-State Device Research Conference, ESSDERC 2016, che, 2016) [Contribution to conference proceedings]

Gnani, Elena; Visciarelli, Michele; Gnudi, Antonio; Reggiani, Susanna; Baccarani, Giorgio, Impact of strain and interface traps on the performance of III-V nanowire TFETs, in: 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 2016, pp. 275 - 278 (atti di: 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016, chn, 2016) [Contribution to conference proceedings]

Visciarelli, Michele; Gnani, Elena; Gnudi, Antonio; Reggiani, Susanna; Baccarani, Giorgio, Impact of Strain on Tunneling Current and Threshold Voltage in III-V Nanowire TFETs, «IEEE ELECTRON DEVICE LETTERS», 2016, 37, Article number: 7428829 , pp. 560 - 563 [Scientific article]Open Access

Visciarelli, M.; Gnani, E.; Gnudi, A.; Reggiani, S.; Baccarani, G., Optimization of GaSb/InAs TFET exploiting different strain configurations, in: 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2016, Institute of Electrical and Electronics Engineers Inc., 2016, pp. 16 - 19 (atti di: 2nd Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2016, Institute for Microelectronics, TU Wien, aut, 2016) [Contribution to conference proceedings]

Rau, Martin; Markussen, Troels; Caruso, Enrico; Esseni, David; Gnani, Elena; Gnudi, Antonio; Khomyakov, Petr A.; Luisier, Mathieu; Osgnach, Patrik; Palestri, Pierpaolo; Reggiani, Susanna; Schenk, Andreas; Selmi, Luca; Stokbro, Kurt, Performance study of strained III-V materials for ultra-thin body transistor applications, in: European Solid-State Device Research Conference, Editions Frontieres, 2016, 2016-, pp. 184 - 187 (atti di: 46th European Solid-State Device Research Conference, ESSDERC 2016, che, 2016) [Contribution to conference proceedings]

Di Lecce, Valerio; Gnudi, Antonio; Gnani, Elena; Reggiani, Susanna; Baccarani, Giorgio, Simulation of graphene base transistors with bilayer tunnel oxide barrier: Model calibration and performance projection, «IEEE ELECTRON DEVICE LETTERS», 2016, 37, pp. 1489 - 1492 [Scientific article]

Gnani, Elena; Baravelli, Emanuele; Maiorano, Pasquale; Gnudi, Antonio; Reggiani, Susanna; Baccarani, Giorgio, Steep-slope devices: Prospects and challenges, «JOURNAL OF NANO RESEARCH», 2016, 39, pp. 3 - 16 [Scientific article]

Cornigli, Davide; Monti, Federico; Reggiani, Susanna; Gnani, Elena; Gnudi, Antonio; Baccarani, Giorgio, TCAD analysis of the leakage current and breakdown versus temperature of GaN-on-Silicon vertical structures, «SOLID-STATE ELECTRONICS», 2016, 115, pp. 173 - 178 [Scientific article]

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