Balestra L.; Reggiani S.; Gnudi A.; Gnani E.; Dobrzynska J.; Vobecky J., Influence of the DLC Passivation Conductivity on the Performance of Silicon High-Power Diodes over an Extended Temperature Range, «IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY», 2021, 9, Article number: 9404302 , pp. 431 - 440 [Scientific article]Open Access
Giuliano F.; Reggiani S.; Gnani E.; Gnudi A.; Rossetti M.; Depetro R.; Croce G., Novel TCAD Approach for the Investigation of Charge Transport in Thick Amorphous SiO2 Insulators, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2021, 68, Article number: 9507338 , pp. 5438 - 5447 [Scientific article]Open Access
Balestra, Luigi; Reggiani, Susanna; Gnudi, Antonio; Gnani, Elena; Dobrzynska, Jagoda; Vobecky, Jan, On the Breakdown Voltage Temperature Dependence of High-Voltage Power Diode Passivated with Diamond-Like Carbon, in: 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS), 2021, pp. 1 - 4 (atti di: 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS), Caen, France, 1-3 Sept. 2021) [Contribution to conference proceedings]
Ahn W.; Alam M.A.; Cornigli D.; Reggiani S.; Varghese D.; Krishnan S., Space Charge Redistribution in Epoxy Mold Compounds of High-Voltage ICs at Dry and Wet Conditions: Theory and Experiment, «IEEE TRANSACTIONS ON DIELECTRICS AND ELECTRICAL INSULATION», 2021, 28, pp. 2043 - 2051 [Scientific article]
Reggiani, Susanna; Balestra, Luigi; Gnudi, Antonio; Gnani, Elena; Baccarani, Giorgio; Dobrzynska, Jagoda; Vobecky, Jan; Tosi, Carlo, TCAD Investigation of Differently-Doped DLC Passivation for Large-Area High-Power Diodes, «IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS», 2021, 9, Article number: 8801920 , pp. 2155 - 2162 [Scientific article]
Carangelo G.; Reggiani S.; Consentino G.; Crupi F.; Meneghesso G., TCAD modeling of bias temperature instabilities in SiC MOSFETs, «SOLID-STATE ELECTRONICS», 2021, 185, Article number: 108067 , pp. 1 - 5 [Scientific article]Open Access
Sanchez L.; Acurio E.; Crupi F.; Reggiani S.; Meneghesso G., BTI saturation and universal relaxation in SiC power MOSFETs, «MICROELECTRONICS RELIABILITY», 2020, 109, Article number: 113642 , pp. 1 - 7 [Scientific article]
Ahn W.; Cornigli D.; Varghese D.; Nguyen L.; Krishnan S.; Reggiani S.; Alam M.A., Effects of Filler Configuration and Moisture on Dissipation Factor and Critical Electric Field of Epoxy Composites for HV-ICs Encapsulation, «IEEE TRANSACTIONS ON COMPONENTS, PACKAGING, AND MANUFACTURING TECHNOLOGY», 2020, 10, Article number: 9163336 , pp. 1534 - 1541 [Scientific article]
Carapezzi S.; Reggiani S.; Gnani E.; Gnudi A., Electron mobility of strained InGaAs long-channel MOSFETs: From scattering rates to TCAD model, «SOLID-STATE ELECTRONICS», 2020, 172, Article number: 107902 , pp. 1 - 7 [Scientific article]
Tallarico A.N.; Reggiani S.; Depetro R.; Croce G.; Sangiorgi E.; Fiegna C., Full Understanding of Hot Electrons and Hot/Cold Holes in the Degradation of p-channel Power LDMOS Transistors, in: 2020 IEEE International Reliability Physics Symposium Proceedings (IRPS), Piscatawey, Institute of Electrical and Electronics Engineers Inc., 2020, 2020, pp. 1 - 5 (atti di: 2020 IEEE International Reliability Physics Symposium, IRPS 2020, USA, E. NETWORK, 28.04-30.05.2020) [Contribution to conference proceedings]Open Access
Gnani E.; Malago P.; Gnudi A.; Reggiani S., New DG FeFET topology with enhanced SS and non-hysteretic behavior, «SOLID-STATE ELECTRONICS», 2020, 168, Article number: 107727 , pp. 107727 - 107731 [Scientific article]
Carapezzi S.; Reggiani S.; Gnani E.; Gnudi A., TCAD Simulation Framework of Gas Desorption in CNT FET NO2Sensors, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2020, 67, Article number: 9199415 , pp. 4682 - 4686 [Scientific article]
Giuliano F.; Magnone P.; Pistollato S.; Tallarico A.N.; Reggiani S.; Fiegna C.; Depetro R.; Rossetti M.; Croce G., TCAD simulation of hot-carrier stress degradation in split-gate n-channel STI-LDMOS transistors, «MICROELECTRONICS RELIABILITY», 2020, 109, Article number: 113643 , pp. 1 - 5 [Scientific article]Open Access
Luigi Balestra, Susanna Reggiani, Antonio Gnudi, Elena Gnani, Jagoda Dobrzynska, Jan Vobecký, TCAD Study of VLD Termination in Large-Area Power Devices Featuring a DLC Passivation, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2020, 67, pp. 4645 - 4648 [Scientific article]
Cornigli D.; Tallarico A.N.; Reggiani S.; Fiegna C.; Sangiorgi E.; Sanchez L.; Valdivieso C.; Consentino G.; Crupi F., Characterization and Modeling of BTI in SiC MOSFETs, in: European Solid-State Device Research Conference, Editions Frontieres, 2019, 2019-, pp. 82 - 85 (atti di: 49th European Solid-State Device Research Conference, ESSDERC 2019, Cracow, POLAND, SEP 23-26, 2019) [Contribution to conference proceedings]Open Access
