Ercolano, F.; Balestra, L.; Krause, S.; Leone, S.; Streicher, I.; Waltereit, P.; Dammann, M.; Reggiani, S., Role of trapping/detrapping in HTRB Stress and pulsed DC conditions in AlGaN/GaN HEMTs analyzed via TCAD simulations, in: IEEE International Integrated Reliability Workshop Final Report, Piscataway, Institute of Electrical and Electronics Engineers Inc., 2023, pp. 1 - 7 (atti di: 2023 IEEE International Integrated Reliability Workshop, IIRW 2023, South Lake Tahoe, CA, USA, 2023) [Contribution to conference proceedings]Open Access
Balestra L.; Ercolano F.; Gnani E.; Reggiani S., TCAD Modeling of High-Field Electron Transport in Bulk Wurtzite GaN: The Full-Band SHE-BTE, «IEEE ACCESS», 2023, 11, pp. 6293 - 6298 [Scientific article]Open Access
Zunarelli L.; Balestra L.; Reggiani S.; Sankaralingam R.; Dissegna M.; Boselli G., TCAD study of the Holding-Voltage Modulation in Irradiated SCR-LDMOS for HV ESD Protection, in: IEEE International Reliability Physics Symposium Proceedings, Institute of Electrical and Electronics Engineers Inc., 2023, 2023-, pp. 1 - 6 (atti di: 61st IEEE International Reliability Physics Symposium, IRPS 2023, usa, 2023) [Contribution to conference proceedings]
Giuliano, F.; Reggiani, S.; Gnani, E.; Gnudi, A.; Rossetti, M.; Depetro, R.; Croce, G., Characterization and numerical analysis of breakdown in thick amorphous SiO2 capacitors, «SOLID-STATE ELECTRONICS», 2022, 192, Article number: 108256 , pp. 1 - 7 [Scientific article]Open Access
Balestra L.; Gnani E.; Reggiani S., Electron effective masses of Scx Al1- x N and Alx Ga1- x N from first-principles calculations of unfolded band structure, «JOURNAL OF APPLIED PHYSICS», 2022, 132, Article number: 215108 , pp. 1 - 6 [Scientific article]Open Access
Balestra L.; Reggiani S.; Gnani E.; Gnudi A., Group velocity of electrons in 4H-SiC from Density Functional Theory simulations, «SOLID-STATE ELECTRONICS», 2022, 194, Article number: 108338 , pp. 1 - 4 [Scientific article]Open Access
Balestra, L.; Reggiani, S.; Gnudi, A.; Gnani, E.; Dobrzynska, J.; Vobecky, J., On the breakdown voltage temperature dependence of high-voltage power diodes passivated with diamond-like carbon, «SOLID-STATE ELECTRONICS», 2022, 193, Article number: 108284 , pp. 1 - 7 [Scientific article]Open Access
Zunarelli L.; Reggiani S.; Gnani E.; Sankaralingam R.; Dissegna M.; Boselli G., TCAD Investigation of Power-to-Failure Evaluation for Ultrafast Events in BJT-based ESD Protection Cells, in: IEEE International Reliability Physics Symposium Proceedings, Institute of Electrical and Electronics Engineers Inc., 2022, 2022-, pp. 6C2-1 - 6C2-6 (atti di: 2022 IEEE International Reliability Physics Symposium, IRPS 2022, usa, 2022) [Contribution to conference proceedings]
Giuliano F.; Reggiani S.; Gnani E.; Gnudi A.; Rossetti M.; Depetro R., Thickness-dependent dielectric breakdown in thick amorphous SiO2 capacitors, «SOLID-STATE ELECTRONICS», 2022, 194, Article number: 108363 , pp. 1 - 5 [Scientific article]Open Access
Giuliano F.; Reggiani S.; Gnani E.; Gnudi A.; Rossetti M.; Depetro R.; Croce G., Constant-current time dependent dielectric breakdown in thick amorphous SiO2 capacitors, in: 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EuroSOI-ULIS 2021, Institute of Electrical and Electronics Engineers Inc., 2021, pp. 1 - 4 (atti di: 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EuroSOI-ULIS 2021, Caen, Francia, 1-3/09/2021) [Contribution to conference proceedings]
Luigi Balestra; Susanna Reggiani; Antonio Gnudi; Elena Gnani; Jan Vobeck{'{y}}; Umamaheswara Vemulapati, Current Instabilities in Large-Area Silicon Diodes: An Accurate TCAD Approach, in: ISPS' 21 Proceedings, 2021, pp. 49 - 53 (atti di: 15th INTERNATIONAL SEMINAR ON POWER SEMICONDUCTORS, Prague, Czech Republic, 26 August - 27 August 2021) [Contribution to conference proceedings]
Balestra L.; Reggiani S.; Gnudi A.; Gnani E.; Dobrzynska J.; Vobecky J., Influence of the DLC Passivation Conductivity on the Performance of Silicon High-Power Diodes over an Extended Temperature Range, «IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY», 2021, 9, Article number: 9404302 , pp. 431 - 440 [Scientific article]Open Access
Giuliano F.; Reggiani S.; Gnani E.; Gnudi A.; Rossetti M.; Depetro R.; Croce G., Novel TCAD Approach for the Investigation of Charge Transport in Thick Amorphous SiO2 Insulators, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2021, 68, Article number: 9507338 , pp. 5438 - 5447 [Scientific article]Open Access
Balestra, Luigi; Reggiani, Susanna; Gnudi, Antonio; Gnani, Elena; Dobrzynska, Jagoda; Vobecky, Jan, On the Breakdown Voltage Temperature Dependence of High-Voltage Power Diode Passivated with Diamond-Like Carbon, in: 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS), 2021, pp. 1 - 4 (atti di: 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS), Caen, France, 1-3 Sept. 2021) [Contribution to conference proceedings]
Ahn W.; Alam M.A.; Cornigli D.; Reggiani S.; Varghese D.; Krishnan S., Space Charge Redistribution in Epoxy Mold Compounds of High-Voltage ICs at Dry and Wet Conditions: Theory and Experiment, «IEEE TRANSACTIONS ON DIELECTRICS AND ELECTRICAL INSULATION», 2021, 28, Article number: 9679751 , pp. 2043 - 2051 [Scientific article]Open Access
