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Susanna Reggiani

Full Professor

Department of Electrical, Electronic, and Information Engineering "Guglielmo Marconi"

Academic discipline: ING-INF/01 Electronic Engineering

Publications

Giuseppe Consentino, Esteban Guevara, Luis Sanchez, Felice Crupi, Susanna Reggiani, Gaudenzio Meneghesso, Threshold Voltage Instability in SiC Power MOSFETs, in: PCIM Europe Conference Proceedings 2019, VDE VERLAG GMBH · Berlin · Offenbach, 2019, pp. 34 - 37 (atti di: PCIM Europe 2019; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Nuremberg, Germany, 7 – 9 May 2019) [Contribution to conference proceedings]

Cornigli, Davide*; Reggiani, Susanna; Gnudi, Antonio; Gnani, Elena; Baccarani, Giorgio; Fabiani, Davide; Varghese, Dhanoop; Tuncer, Enis; Krishnan, Srikanth; Nguyen, Luu, Characterization of dielectric properties and conductivity in encapsulation materials with high insulating filler contents, «IEEE TRANSACTIONS ON DIELECTRICS AND ELECTRICAL INSULATION», 2018, 25, pp. 2421 - 2428 [Scientific article]Open Access

Cornigli, D.*; Reggiani, S.; Gnudi, A.; Gnani, E.; Baccarani, G.; Fabiani, D.; Varghese, D.; Tuncer, E.; Krishnan, S.; Nguyen, L., Electrical characterization of epoxy-based molding compounds for next generation HV ICs in presence of moisture, «MICROELECTRONICS RELIABILITY», 2018, 88-90, pp. 752 - 755 [Scientific article]Open Access

Tallarico, Andrea Natale*; Reggiani, Susanna; Depetro, Riccardo; Manzini, Stefano; Torti, Andrea Mario; Croce, Giuseppe; Sangiorgi, Enrico; Fiegna, Claudio, Hot-carrier degradation in power LDMOS: Drain bias dependence and lifetime evaluation, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2018, 65, pp. 5195 - 5198 [Scientific article]Open Access

Tallarico, Andrea Natale*; Reggiani, Susanna; Depetro, Riccardo; Torti, Andrea Mario; Croce, Giuseppe; Sangiorgi, Enrico; Fiegna, Claudio, Hot-Carrier Degradation in Power LDMOS: Selective LOCOS-Versus STI-Based Architecture, «IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY», 2018, 6, pp. 219 - 226 [Scientific article]Open Access

Reggiani, S.; Rossetti, M.; Gnudi, A.*; Tallarico, A.N.; Molfese, A.; Manzini, S.; Depetro, R.; Croce, G.; Sangiorgi, E.; Fiegna, C., TCAD investigation on hot-electron injection in new-generation technologies, «MICROELECTRONICS RELIABILITY», 2018, 88-90, pp. 1090 - 1093 [Scientific article]Open Access

Reggiani, S.; Balestra, L.; Gnudi, A.*; Gnani, E.; Baccarani, G.; Dobrzynska, J.; Vobecký, J.; Tosi, C., TCAD study of DLC coatings for large-area high-power diodes, «MICROELECTRONICS RELIABILITY», 2018, 88-90, pp. 1094 - 1097 [Scientific article]

Gnani, E.; Gnudi, A.; Reggiani, S.; Baccarani, G.; Visciarelli, M., TFET-based inverter performance in the presence of traps and localized strain, in: 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018, Institute of Electrical and Electronics Engineers Inc., 2018, 2018-, pp. 1 - 4 (atti di: 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018, esp, 2018) [Contribution to conference proceedings]

Stefania Carapezzi; Sebastian Eberle; Susanna Reggiani; Elena Gnani; Cosmin Roman; Christofer Hierold; Antonio Gnudi, 3D TCAD modeling of NO2CNT FET sensors, in: 48th European Solid-State Device Research Conference (ESSDERC) : Dresden, 3-6 september 2018, Piscataway ; Red Hook ; Gif-sur-Yvette, Institute of Electrical and Electronics Engineers ( IEEE ) ; Curran Associates, 2018, CFP18543-POD, pp. 222 - 225 (atti di: 48th European Solid-State Device Research Conference, ESSDERC 2018, Dresden, 3 - 6 Settembre 2018) [Contribution to conference proceedings]Open Access

Visciarelli, Michele; Gnani, Elena; Gnudi, Antonio; Reggiani, Susanna; Baccarani, Giorgio, Design guidelines for GaSb/InAs TFET exploiting strain and device size, «SOLID-STATE ELECTRONICS», 2017, 129, pp. 157 - 162 [Scientific article]

Mikael, Östling; Ming, Liu; Sam, Vaziri; Susanna, Reggiani, Exciting Times for Our Journal, «IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY», 2017, 5, pp. 430 - 431 [Comment or similar]

Visciarelli, Michele; Gnani, Elena; Gnudi, Antonio; Reggiani, Susanna; Baccarani, Giorgio, Impact of Traps and Strain on Optimized n- and p-Type TFETs Integrated on the Same InAs/AlGaSb Technology Platform, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2017, 64, pp. 3108 - 3113 [Scientific article]

Visciarelli, Michele; Gnani, Elena; Gnudi, Antonio; Reggiani, Susanna; Baccarani, Giorgio, Investigation of the combined effect of traps and strain on optimized n- and p-type TFETs, in: Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 2017, pp. 13 - 16 (atti di: 2017 Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017, grc, 2017) [Contribution to conference proceedings]

Tallarico, A. N.; Reggiani, S.; Magnone, P.; Croce, G.; Depetro, R.; Gattari, P.; Sangiorgi, E.; Fiegna, C., Investigation of the hot carrier degradation in power LDMOS transistors with customized thick oxide, «MICROELECTRONICS RELIABILITY», 2017, 76-77, pp. 475 - 479 [Scientific article]Open Access

Selmi, L.; Caruso, E.; Carapezzi, S.; Visciarelli, M.; Gnani, E.; Zagni, N.; Pavan, P.; Palestri, P.; Esseni, D.; Gnudi, A.; Reggiani, S.; Puglisi, F.M.; Verzellesi, G., Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD, in: Technical Digest - International Electron Devices Meeting, IEDM, Institute of Electrical and Electronics Engineers Inc., 2017, pp. 13.4.1 - 13.4.4 (atti di: 63rd IEEE International Electron Devices Meeting, IEDM 2017, USA, 2017) [Contribution to conference proceedings]

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