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Susanna Reggiani

Professoressa ordinaria

Dipartimento di Ingegneria dell'Energia Elettrica e dell'Informazione "Guglielmo Marconi"

Settore scientifico disciplinare: ING-INF/01 ELETTRONICA

Pubblicazioni

A. Marchi; S. Reggiani; M. Rudan; A. Bertoni, Numerical simulation of ballistic surface transport in cylindrical nanosystems, «JOURNAL OF COMPUTATIONAL ELECTRONICS», 2006, 5, pp. 177 - 180 [articolo]

M. Rudan; S. Reggiani; E. Gnani; G. Baccarani; C. Corvasce; M. Ciappa; M. Stecher; D. Pogany; E. Gornik, Physical Models for Smart-Power Devices, in: Proceedings of the 13th International Conference on Mixed Design of Integrated Circuits and Systems (MIXDESS 2006), GDYNIA, s.n, 2006, pp. 28 - 33 (atti di: 13th International Conference on Mixed Design of Integrated Circuits and Systems” (MIXDESS 2006), Gdynia, Poland, June 22-24) [Contributo in Atti di convegno]

E. Gnani; A. Marchi; S. Reggiani; M. Rudan; G. Baccarani, Quantum mechanical analysis of the electrostatics in silicon nanowires and carbon nanotubes FETs, «SOLID-STATE ELECTRONICS», 2006, 50, pp. 709 - 717 [articolo]

M. Rudan; A. Marchi; R. Brunetti; S. Reggiani; E. Gnani, The R-Sigma Approach to Tunneling in Nanoscale Devices, in: Nonequilibrium carrier dynamics in semiconductors: Proceedings of the 14th International Conference, NEW YORK, Springer, 2006, pp. 137 - 141 (atti di: HCIS-14, Chicago, USA, 25-29 luglio 2005) [Contributo in Atti di convegno]

Rudan M.; Reggiani S.; Gnani E.; Baccarani G.; Corvasce C.; Barlini D.; Ciappa M.; Fichtner W.; Denison M.; Jensen N.; Groos G.; Stecher M., Theory and experimental validation of a new analytical model for the position-dependent Hall Voltage in devices with arbitrary aspect ratio, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2006, 53, pp. 314 - 322 [articolo]

M. RUDAN; E. GNANI; S. REGGIANI; G. BACCARANI, A Coherent Extension of the Transport Equations in Semiconductors Incorporating the Quantum Correction: Part I – Single Particle Dynamics, «IEEE TRANSACTIONS ON NANOTECHNOLOGY», 2005, 4, pp. 495 - 502 [articolo]

M. RUDAN; E. GNANI; S. REGGIANI; BACCARANI G., A Coherent Extension of the Transport Equations in Semiconductors Incorporating the Quantum Correction: Part II – Collective Transport, «IEEE TRANSACTIONS ON NANOTECHNOLOGY», 2005, 4, pp. 503 - 509 [articolo]

S. Reggiani; E. Gnani; M. Rudan; G. Baccarani; S. Bychikhin; J. Kuzmik; D. Pogany; E. Gornik; M. Denison; N. Jensen; G. Groos; M. Stecher, A new numerical and experimental analysis tool for ESD devices by means of the transient interferometric technique, «IEEE ELECTRON DEVICE LETTERS», 2005, 26, pp. 916 - 918 [articolo]

E. Gnani; S. Reggiani; M. Rudan; G. Baccarani, A quantum mechanical analysis of the electrostatics in multiple-gate FETs, in: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2005), TOKYO, IEEE EDS Japan Chapter, 2005, pp. 291 - 294 (atti di: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2005), Tokyo, Japan, 1-3 Settembre 2005) [Contributo in Atti di convegno]

A. Marchi; S. Reggiani; M. Rudan, A Schroedinger-Poisson Solution of CNT-FET Arrays, in: M. HANE, N. SANO, International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2005), TOKYO, IEEE EDS Japan Chapter, 2005, pp. 83 - 86 (atti di: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2005), Tokyo, Japan, 1-3 Settembre 2005) [Contributo in Atti di convegno]

A. Marchi; A. Bertoni; S. Reggiani; M. Rudan, Coherent electron transport in bent cylindrical surfaces, «PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS», 2005, 72, pp. 35403-1 - 35403-10 [articolo]

A. Marchi; A. Bertoni; S. Reggiani; M. Rudan, Coherent surface transport in cylindrical nanosystems, in: Book of Abstracts of the QT2005, BOLOGNA, s.n, 2005, 1, pp. 27 - 27 (atti di: International Conference on Quantum Transport 2005 (QT2005), Bologna, 3-5 July 2005) [atti di convegno-abstract]

R. Katilius; S. Reggiani; M. Rudan, Current Fluctuations in Degenerate Non-Equilibrium Systems, in: Proceedings of the 18th International Conference on Noise and Fluctuations (ICNF 2005), MELVILLE, NY, American Institute of Physics, 2005, pp. 29 - 32 (atti di: 18th International Conference on Noise and Fluctuations (ICNF 2005), Salamanca, Spain, 19-23 September, 2005) [Contributo in Atti di convegno]

M. Rudan; S. Reggiani; E. Gnani; G. Baccarani; C. Corvasce; D. Barlini; M. Ciappa; W. Fichtner; M. Denison; N. Jensen; G. Groos; M. Stecher, Experimental validation of a new analytical model for the position-dependent Hall voltage in semiconductor devices, in: M. BRILLOUET, S. CRISTOLOVEANU, G. GHIBAUDO, T. SKOTNICKI, Proceedings of ESSDERC 2005, GRENOBLE, s.n, 2005(atti di: European Solid-State Device Research Conference, Grenoble, 13-15 Settembre 2005) [Contributo in Atti di convegno]

A. Marchi; E. Gnani; S. Reggiani; M. Rudan; G. Baccarani, Investigating the performance limits of silicon nanowires and carbon nanotube FETs, in: ULIS 2005, BOLOGNA, s.n, 2005(atti di: 6th International Conference on Ultimate Integration of Silicon (ULIS 2005), Bologna, 7-9 Aprile 2005) [Contributo in Atti di convegno]

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