Reggiani S.; Bertoni A.; Rudan M., Numerical simulation of a two-particle wave function in quantum wires, in: International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, Institute of Electrical and Electronics Engineers Inc., 2002, 2002-, pp. 175 - 178 (atti di: International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2002, International Conference Center Kobe, jpn, 2002) [Contributo in Atti di convegno]
Bertoni A.; Bordone P.; Brunetti R.; Jacoboni C.; Reggiani S., Numerical simulation of coherent transport in quantum wires for quantum computing, «JOURNAL OF MODERN OPTICS», 2002, 49, pp. 1219 - 1234 [articolo]
Reggiani S.; Bertoni A.; Rudan M., Quantum algorithms in the frame of the coupled quantum-wires system, «PHYSICA. B, CONDENSED MATTER», 2002, 314, pp. 136 - 140 [articolo]
Bertoni A.; Reggiani S., Quantum computation and proposal for solid-state quantum gates, in: European Solid-State Device Research Conference, IEEE Computer Society, «PROCEEDINGS OF THE EUROPEAN SOLID STATE DEVICE RESEARCH CONFERENCE», 2002, pp. 383 - 390 (atti di: 32nd European Solid-State Device Research Conference, ESSDERC 2002, ita, 2002) [Contributo in Atti di convegno]
Reggiani S.; Valdinoci A.; Colalongo L.; Rudan M.; Baccarani G.; Stricker A.; Illien F.; Felber N.; Fichtner W.; Mettler S.; Lindenkreuz S.; Zullino L., Surface mobility in silicon at large operating temperature, in: International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, Institute of Electrical and Electronics Engineers Inc., 2002, 2002-, pp. 15 - 20 (atti di: International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2002, International Conference Center Kobe, jpn, 2002) [Contributo in Atti di convegno]
Gnani E.; Reggiani S.; Colle R.; Rudan M., Calculation of transport parameters of SiO2 polymorphs, «VLSI DESIGN», 2001, 13, pp. 311 - 315 [articolo]
Bertoni A.; Bordone P.; Brunetti R.; Jacoboni C.; Reggiani S., Numerical simulation of quantum logic gates based on quantum wires, «VLSI DESIGN», 2001, 13, pp. 97 - 102 [articolo]
Reggiani S.; Valdinoci M.; Colalongo L.; Rudan M.; Baccarani G., Analytical, temperature-dependent model for majority- and minority-carrier mobility in silicon devices, «VLSI DESIGN», 2000, 10, pp. 467 - 483 [articolo]
Gnani E.; Reggiani S.; Colle R.; Rudan M., Band-structure calculations of SiC>2 by means of hartree-fock and density-functional techniques, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2000, 47, pp. 1795 - 1803 [articolo]
Marsella M.; Reggiani S.; Gnudi A.; Rudan M., Electron injection in MOSFETs with a self-consistent Si and SiO2 BTE solution based on spherical-harmonics expansion, in: European Solid-State Device Research Conference, IEEE Computer Society, «PROCEEDINGS OF THE EUROPEAN SOLID STATE DEVICE RESEARCH CONFERENCE», 2000, pp. 604 - 607 (atti di: 30th European Solid-State Device Research Conference, ESSDERC 2000, irl, 2000) [Contributo in Atti di convegno]
Baccarani G.; Reggiani S., Performance limits of CMOS technology and perspectives of quantum devices, «COMPTES RENDUS DE L'ACADÉMIE DES SCIENCES. SÉRIE IV, PHYSIQUE, ASTROPHYSIQUE», 2000, 1, pp. 843 - 873 [articolo]
Bertoni A.; Bordone P.; Brunetti R.; Jacoboni C.; Reggiani S., Quantum logic gates based on coherent electron transport in quantum wires, «PHYSICAL REVIEW LETTERS», 2000, 84, pp. 5912 - 5915 [articolo]
Reggiani S.; Bertoni A.; Bordone P.; Brunetti R.; Jacoboni C.; Rudan M.; Baccarani G., Two-qbit gates based on coupled quantum wires, in: International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, Piscataway, NJ, United States, IEEE, 2000, pp. 184 - 187 (atti di: International Conference on Simulation of Semiconductor Processes and Devices, Seattle, WA, USA,, 2000) [Contributo in Atti di convegno]
Baccarani G.; Reggiani S., A compact double-gate MOSFET model comprising quantum-mechanical and nonstatic effects, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 1999, 46, pp. 1656 - 1666 [articolo]
Reggiani S.; Valdinoci M.; Colalongo L.; Baccarani G., A unified analytical model for bulk and surface mobility in Si n- and p-Channel MOSFET's, in: European Solid-State Device Research Conference, IEEE Computer Society, «PROCEEDINGS OF THE EUROPEAN SOLID STATE DEVICE RESEARCH CONFERENCE», 1999, 13-15, pp. 240 - 243 (atti di: 29th European Solid-State Device Research Conference, ESSDERC 1999, bel, 1999) [Contributo in Atti di convegno]
