Baccarani G.; Reggiani S., Compact double-gate MOSFET model comprising quantum-mechanical and non-static effects, in: International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, Piscataway, NJ, United States, IEEE, 1999, pp. 11 - 14 (atti di: Proceedings of the 1999 International Conference on Simulation of Semicondutor Processes and Devices (SISPAD'99), Kyoto, Jpn,, 1999) [Contributo in Atti di convegno]
Scozzoli L.; Reggiani S.; Rudan M., Homogeneous transport in silicon dioxide using the spherical-harmonics expansion of the BTE, in: International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, Piscataway, NJ, United States, IEEE, 1999, pp. 251 - 254 (atti di: Proceedings of the 1999 International Conference on Simulation of Semicondutor Processes and Devices (SISPAD'99), Kyoto, Jpn,, 1999) [Contributo in Atti di convegno]
Reggiani S.; Vecchi M.C.; Rudan M., Investigation on electron and hole transport properties using the full-band spherical-harmonics expansion method, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 1998, 45, pp. 2010 - 2017 [articolo]
Reggiani S.; Vecchi M.C.; Rudan M., Temperature dependence of the electron and hole scattering mechanisms in silicon analyzed through a full-band, spherical-harmonics solution of the BTE, «VLSI DESIGN», 1998, 8, pp. 361 - 365 [articolo]
Rudan Massimo; Lorenzini Martino; Vecchi Maria Cristina; Reggiani Susanna, Comprehensive system for submicron-device simulation, in: Proceedings of the International Conference on Microelectronics, Piscataway, NJ, United States, IEEE, 1997, 1, pp. 41 - 48 (atti di: Proceedings of the 1997 21st International Conference on Microelectronics, MIEL'97. Part 1 (of 2), Nis, Yugosl,, 1997) [Contributo in Atti di convegno]
