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Susanna Reggiani

Professoressa ordinaria

Dipartimento di Ingegneria dell'Energia Elettrica e dell'Informazione "Guglielmo Marconi"

Settore scientifico disciplinare: ING-INF/01 ELETTRONICA

Coordinatrice del Corso di Laurea in Ingegneria elettronica e telecomunicazioni

Pubblicazioni

E. Gnani; S. Reggiani; M. Rudan; G. Baccarani, A new approach to the self-consistent solution of the Schroedinger-Poisson Equations in nanowire MOSFETs, in: Proceedings of the 34th European Solid-State Deviec Research Conference, LEUVEN, s.n, 2004, pp. 177 - 180 (atti di: European Solid-State Device Research Conference (ESSDERC 2004), Leuven, BE, 21-23 Settembre 2004) [Contributo in Atti di convegno]

Gnani E.; Reggiani S.; Rudan M.; Baccarani G., A new approach to the self-consistent solution of the Schrödinger- Poisson equations in nanowire MOSFETs, in: ESSCIRC 2004 - Proceedings of the 34th European Solid-State Device Research Conference, 2004, pp. 177 - 180 (atti di: ESSCIRC 2004 - Proceedings of the 34th European Solid-State Device Research Conference, Leuven, bel, 2004) [Contributo in Atti di convegno]

P. Bordone; A. Bertoni; M. Rosini; S. Reggiani; C. Jacoboni, Coherent transport in coupled quantum wires assisted by surface acoustic waves, «SEMICONDUCTOR SCIENCE AND TECHNOLOGY», 2004, 19, pp. 412 - 414 [articolo]

A. Marchi; A. Bertoni; S. Reggiani; M. Rudan, Effect of topology on coherent transport through nanotube junctions, in: IEEE-Nano 2004, MUNICH, P. Lugli, 2004, 1, pp. 104 - 106 (atti di: 4th IEEE Conference on Nanotechnology (2004), Munich, Germany, 16-19 Aug., 2004) [Contributo in Atti di convegno]

A. Bertoni; S. Reggiani, Entanglement and quantum computing with ballistic electrons, «SEMICONDUCTOR SCIENCE AND TECHNOLOGY», 2004, 19, pp. 113 - 117 [articolo]

S. REGGIANI; M. RUDAN; E. GNANI; BACCARANI G.; C. CORVASCE; D. BARLINI; M. CIAPPA; W. FICHTNER; M. DENISON; N. JENSEN; G. GROOS; M. STECHER, Experimental extraction of the electron impact-ionization coefficient at large operating temperatures, in: Technical Digest of the IEEE International Electron Device Meeting 2004, SAN FRANCISCO, IEEE-EDS, 2004, pp. 407 - 410 (atti di: International Electron Device Meeting (IEDM-2004), San Francisco, 13-15 Dicembre 2004) [Contributo in Atti di convegno]

G. Perroni; S. Reggiani; M. Rudan, Gate current of a ‘well-tempered’ MOSFET simulated with the spherical-harmonic expansion model, «SEMICONDUCTOR SCIENCE AND TECHNOLOGY», 2004, 19, pp. 158 - 160 [articolo]

S. REGGIANI; M. RUDAN; E. GNANI; G. BACCARANI, Investigation about the high temperature impact-ionization coefficient in silicon, in: Proceedings of the 34th European Solid-State Device Research Conference, LEUVEN, s.n, 2004, pp. 245 - 248 (atti di: European Solid-State Device Research Conference (ESSDERC-2004), Leuven, BE, 21-23 Settembre 2004) [Contributo in Atti di convegno]

MARCHI A.; BERTONI A.; REGGIANI S.; RUDAN M., Investigation on single-electron dynamics in coupled GaAs-AlGaAs quantum wires, «IEEE TRANSACTIONS ON NANOTECHNOLOGY», 2004, 3, pp. 129 - 133 [articolo]

E. Gnani; S. Reggiani; M. Rudan; G. Baccarani, On the Electrostatics of Double-Gate and Cylindrical Nanowire MOSFETs, in: Book of Abstracts of the IWCE10, WEST LAFAYETTE, M. Lundstrum, 2004, 1, pp. 229 - 230 (atti di: International Workshop on Computational Electronics, West Lafayette, Indiana, USA, October 24 - 27 2004) [Contributo in Atti di convegno]

M. RUDAN; E. GNANI; S. REGGIANI; G. BACCARANI, The density-gradient correction as a disguised pilot wave of de Broglie, in: Simulation of Semiconductor Processes and Devices (SISPAD 2004), VIENNA, Springer, 2004, pp. 13 - 16 (atti di: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD-2004), Munich, 2-4 Settembre 2004) [Contributo in Atti di convegno]

Rudan M.; Reggiani S.; Gnani E.; Baccarani G., Determination of the Hall voltage in devices with arbitrary aspect ratio and probe position, in: European Solid-State Device Research Conference, 345 E 47TH ST, NEW YORK, NY 10017 USA, IEEE Computer Society, «PROCEEDINGS OF THE EUROPEAN SOLID STATE DEVICE RESEARCH CONFERENCE», 2003, pp. 355 - 358 (atti di: 33rd European Solid-State Device Research Conference, ESSDERC 2003, prt, 2003) [Contributo in Atti di convegno]

Gnani E.; Reggiani S.; Rudan M., Hole density of states and group velocity in SiO2, «PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS», 2003, 68, pp. 233203-1 - 233203-4 [articolo]

Marchi A.; Reggiani S.; Bertoni A.; Rudan M., Two-Particle Eigenfunctions of Electrons Propagating in Two Parallel Quantum Wires, «JOURNAL OF COMPUTATIONAL ELECTRONICS», 2003, 2, pp. 381 - 385 [articolo]

Gnani E.; Reggiani S.; Rudan M., Density of states and group velocity of electrons in (formula presented) calculated from a full band structure, «PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS», 2002, 66, pp. 1 - 10 [articolo]

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