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Susanna Reggiani

Professoressa ordinaria

Dipartimento di Ingegneria dell'Energia Elettrica e dell'Informazione "Guglielmo Marconi"

Settore scientifico disciplinare: ING-INF/01 ELETTRONICA

Pubblicazioni

S. Reggiani; E. Gnani; M. Rudan; G. Baccarani; C. Corvasce; D. Barlini; M. Ciappa; W. Fichtner; M. Denison; N. Jensen; G. Groos; M. Stecher, Measurement and modeling of the electron impact-ionization coefficient in silicon up to very high temperatures, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2005, 52, pp. 2290 - 2299 [articolo]

A. Marchi; A. Bertoni; S. Reggiani; M. Rudan, Numerical simulation of ballistic surface transport in cylindrical nanosystems, in: Book of Abstracts of MSED 2005, PISA, s.n, 2005, 1, pp. 103 - 104 (atti di: 15th Workshop on Modelling and Simulation of Electron Devices (MSED 2005), Pisa, 4-5 July, 2005) [Contributo in Atti di convegno]

E. Gnani; S. Reggiani; M. Rudan; G. Baccarani, On the Electrostatics of Double-Gate and Cylindrical Nanowire MOSFETs, «JOURNAL OF COMPUTATIONAL ELECTRONICS», 2005, 4, pp. 71 - 74 [articolo]

S. Reggiani; E. Gnani; M. Rudan; G. Baccarani; S. Bychikhin; J. Kuzmik; D. Pogany; E. Gornik; M. Denison; N. Jensen; G. Groos; M. Stecher, Predictive device simulation for ESD protection structures validated with transient interferometric thermal-mapping experiments, in: Proceedings of the European Solid-State Device Research Conference (ESSDERC 2005), GRENOBLE, s.n, 2005, pp. 411 - 414 (atti di: European Solid-State Device Research Conference (ESSDERC 2005), Grenoble, 11-15 Settembre 2005) [Contributo in Atti di convegno]

E. Gnani; A. Marchi; S. Reggiani; M. Rudan; G. Baccarani, Quantum-mechanical analysis of the electrostatics in silicon-nanowire and carbon-nanotube FETs, in: Proceedings of the European Solid-State Device Research Conference (ESSDERC 2005), GRENOBLE, s.n, 2005, pp. 161 - 164 (atti di: European Solid-State Device Research Conference (ESSDERC 2005), Grenoble, 13-15 Settembre 2005) [Contributo in Atti di convegno]

M. Rudan; A. Marchi; R. Brunetti; S. Reggiani; E. Gnani, The R-Sigma Approach to Tunneling in Nanoscale Devices, in: Proc. of the 14th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-14)., CHICAGO, IL, IEEE, 2005, pp. 45 - 46 (atti di: 14th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-14)., Chicago, July 24-29, 2005) [Contributo in Atti di convegno]

E. Gnani; S. Reggiani; M. Rudan; G. Baccarani, A new approach to the self-consistent solution of the Schroedinger-Poisson Equations in nanowire MOSFETs, in: Proceedings of the 34th European Solid-State Deviec Research Conference, LEUVEN, s.n, 2004, pp. 177 - 180 (atti di: European Solid-State Device Research Conference (ESSDERC 2004), Leuven, BE, 21-23 Settembre 2004) [Contributo in Atti di convegno]

P. Bordone; A. Bertoni; M. Rosini; S. Reggiani; C. Jacoboni, Coherent transport in coupled quantum wires assisted by surface acoustic waves, «SEMICONDUCTOR SCIENCE AND TECHNOLOGY», 2004, 19, pp. 412 - 414 [articolo]

A. Marchi; A. Bertoni; S. Reggiani; M. Rudan, Effect of topology on coherent transport through nanotube junctions, in: IEEE-Nano 2004, MUNICH, P. Lugli, 2004, 1, pp. 104 - 106 (atti di: 4th IEEE Conference on Nanotechnology (2004), Munich, Germany, 16-19 Aug., 2004) [Contributo in Atti di convegno]

A. Bertoni; S. Reggiani, Entanglement and quantum computing with ballistic electrons, «SEMICONDUCTOR SCIENCE AND TECHNOLOGY», 2004, 19, pp. 113 - 117 [articolo]

S. REGGIANI; M. RUDAN; E. GNANI; BACCARANI G.; C. CORVASCE; D. BARLINI; M. CIAPPA; W. FICHTNER; M. DENISON; N. JENSEN; G. GROOS; M. STECHER, Experimental extraction of the electron impact-ionization coefficient at large operating temperatures, in: Technical Digest of the IEEE International Electron Device Meeting 2004, SAN FRANCISCO, IEEE-EDS, 2004, pp. 407 - 410 (atti di: International Electron Device Meeting (IEDM-2004), San Francisco, 13-15 Dicembre 2004) [Contributo in Atti di convegno]

G. Perroni; S. Reggiani; M. Rudan, Gate current of a ‘well-tempered’ MOSFET simulated with the spherical-harmonic expansion model, «SEMICONDUCTOR SCIENCE AND TECHNOLOGY», 2004, 19, pp. 158 - 160 [articolo]

S. REGGIANI; M. RUDAN; E. GNANI; G. BACCARANI, Investigation about the high temperature impact-ionization coefficient in silicon, in: Proceedings of the 34th European Solid-State Device Research Conference, LEUVEN, s.n, 2004, pp. 245 - 248 (atti di: European Solid-State Device Research Conference (ESSDERC-2004), Leuven, BE, 21-23 Settembre 2004) [Contributo in Atti di convegno]

MARCHI A.; BERTONI A.; REGGIANI S.; RUDAN M., Investigation on single-electron dynamics in coupled GaAs-AlGaAs quantum wires, «IEEE TRANSACTIONS ON NANOTECHNOLOGY», 2004, 3, pp. 129 - 133 [articolo]

E. Gnani; S. Reggiani; M. Rudan; G. Baccarani, On the Electrostatics of Double-Gate and Cylindrical Nanowire MOSFETs, in: Book of Abstracts of the IWCE10, WEST LAFAYETTE, M. Lundstrum, 2004, 1, pp. 229 - 230 (atti di: International Workshop on Computational Electronics, West Lafayette, Indiana, USA, October 24 - 27 2004) [Contributo in Atti di convegno]

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