S. Poli; S. Reggiani; A. Gnudi; E. Gnani; G. Baccarani, Computational study of the ultimate scaling limits of CNT tunneling devices, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2008, 55, pp. 313 - 321 [articolo]
L. Silvestri; S. Reggiani; E. Gnani; A. Gnudi; M. Rudan; G.Baccarani, Effects of channel orientation, high-k gate stacks and stress on UTB-FETs: a QDD simulation study, in: Proceedings of the IEEE International Workshop on Design and Test of Nano Devices, Circuits and Systems, BOSTON, MA, IEEE Press, 2008, pp. 7 - 10 (atti di: IEEE International Workshop on Design and Test of Nano Devices, Circuits and Systems (NDCS 2008), Boston, MA, 29-30 September 2008) [Contributo in Atti di convegno]
R. Grassi; A. Gnudi; E. Gnani; S. Reggiani; G. Baccarani, Graphene Nanoribbon FETs for High-Performance Logic Applications: Perspectives and Challenges, in: 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings, BEIJING, IEEE Press, 2008, I, pp. 365 - 369 (atti di: 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT 2008), Beijing, 21-23 October, 2008) [Contributo in Atti di convegno]
R. Grassi; A. Gnudi; E. Gnani; S. Reggiani; G. Cinacchi; G. Baccarani, Hierarchical modeling of carbon nanoribbon devices for CNR-FETs engineering, in: Conference Digest of the 66th IEEE Device Research Conference, SANTA BARBARA, CA, IEEE Press, 2008, pp. 105 - 106 (atti di: 66th IEEE Device Research Conference (DRC-2008), Santa Barbara, CA, 23-25 June 2008) [Contributo in Atti di convegno]
M. Rudan; R. Katilius; S. Reggiani; E. Gnani; G. Baccarani, Impact-ionization coefficient in silicon at high fields: – A parametric approach, «JOURNAL OF COMPUTATIONAL ELECTRONICS», 2008, 7, pp. 151 - 154 [articolo]
M. Lenzi; P. Palestri; E. Gnani; S. Reggiani; A. Gnudi; D. Esseni; L. Selmi; G. Baccarani, Investigation of the Transport Properties of Silicon Nanowires Using Deterministic and Monte Carlo Approaches to the Solution of the Boltzmann Transport Equation, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2008, 55, pp. 2086 - 2096 [articolo]
E. Gnani; S. Reggiani; A. Gnudi; R. Colle; G. Baccarani, OH dangling-bond saturation and dielectric function effects in ultra-scaled SNW-FETs, in: Proceedings of the Device Research Conference, SANTA BARBARA, CA, IEEE Press, 2008, pp. 95 - 96 (atti di: Device Research Conference (DRC-2008), Santa Barbara, CA, 23-25 June, 2008) [Contributo in Atti di convegno]
R. Grassi; S. Poli; S. Reggiani; E. Gnani; A. Gnudi; G. Baccarani, Phonon-scattering effects in CNT-FETs with different dimensions and dielectric materials, «SOLID-STATE ELECTRONICS», 2008, 52, pp. 1329 - 1335 [articolo]
E. Gnani; A. Gnudi; S. Reggiani; G. Baccarani, Quasi-Ballistic Tansport in Nanowire Field-Effect Transistors, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2008, 55, pp. 2918 - 2930 [articolo]
G. Baccarani; E. Gnani; A. Gnudi; S. Reggiani, Quasi-Ballistic Transport in Nanowire Field-Effect Transistors, in: 2008 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2008), HAKONE, s.n, 2008, pp. 5 - 8 (atti di: 2008 International Conference on Simulation of SEmiconductor Processes and Devices (SISPAD 2008), Hakone, Japan, 9-11 September, 2008) [Contributo in Atti di convegno]
E. Gnani; S. Reggiani; A. Gnudi; M. Rudan; G. Baccarani, Scaling Properties of Silicon Nanowire and Carbon-Nanotube FETs, «JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE», 2008, 5, pp. 1145 - 1151 [articolo]
M. Lenzi; A. Gnudi; S. Reggiani; E. Gnani; M. Rudan; G. Baccarani, Semiclassical Transport in Silicon Nanowire FETs including Surface Roughness, «JOURNAL OF COMPUTATIONAL ELECTRONICS», 2008, 7, pp. 355 - 358 [articolo]
G. Baccarani; E. Gnani; A. Gnudi; S. Reggiani; M. Rudan, Theoretical foundations of the quantum drift-diffusion and density-gradient models, «SOLID-STATE ELECTRONICS», 2008, 52, pp. 526 - 532 [articolo]
R. Grassi; S. Poli; E Gnani; A. Gnudi; S. Reggiani; G. Baccarani, Tight-binding and effective mass modeling of armchair carbon nanoribbon FETs, in: Proceedings of the 9th International Conference on Ultimate Integration on Silicon, UDINE, s.n, 2008, pp. 121 - 124 (atti di: 9th International Con-ference on Ultimate Integration on Silicon (ULIS 2008), Udine, 12-14 March, 2008.) [Contributo in Atti di convegno]
Silvestri L.; Reggiani S.; Gnani E.; Gnudi A.; Baccarani G., Unified model for low-field electron mobility in bulk and SOI-MOSFETs with different substrate orientations and its application to quantum drift-diffusion simulation, in: ULIS 2008 - 9th International Conference on ULtimate Integration of Silicon, 2008, pp. 129 - 132 (atti di: 9th International Conference on ULtimate Integration of Silicon, ULIS 2008, Udine, Italy, 2008) [Contributo in Atti di convegno]
