M. Rudan; R. Katilius; S. Reggiani; E. Gnani; G. Baccarani, Impact-ionization coefficient in silicon at high fields: – A parametric approach, «JOURNAL OF COMPUTATIONAL ELECTRONICS», 2008, 7, pp. 151 - 154 [articolo]
M. Lenzi; P. Palestri; E. Gnani; S. Reggiani; A. Gnudi; D. Esseni; L. Selmi; G. Baccarani, Investigation of the Transport Properties of Silicon Nanowires Using Deterministic and Monte Carlo Approaches to the Solution of the Boltzmann Transport Equation, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2008, 55, pp. 2086 - 2096 [articolo]
E. Gnani; S. Reggiani; A. Gnudi; R. Colle; G. Baccarani, OH dangling-bond saturation and dielectric function effects in ultra-scaled SNW-FETs, in: Proceedings of the Device Research Conference, SANTA BARBARA, CA, IEEE Press, 2008, pp. 95 - 96 (atti di: Device Research Conference (DRC-2008), Santa Barbara, CA, 23-25 June, 2008) [Contributo in Atti di convegno]
R. Grassi; S. Poli; S. Reggiani; E. Gnani; A. Gnudi; G. Baccarani, Phonon-scattering effects in CNT-FETs with different dimensions and dielectric materials, «SOLID-STATE ELECTRONICS», 2008, 52, pp. 1329 - 1335 [articolo]
E. Gnani; A. Gnudi; S. Reggiani; G. Baccarani, Quasi-Ballistic Tansport in Nanowire Field-Effect Transistors, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2008, 55, pp. 2918 - 2930 [articolo]
G. Baccarani; E. Gnani; A. Gnudi; S. Reggiani, Quasi-Ballistic Transport in Nanowire Field-Effect Transistors, in: 2008 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2008), HAKONE, s.n, 2008, pp. 5 - 8 (atti di: 2008 International Conference on Simulation of SEmiconductor Processes and Devices (SISPAD 2008), Hakone, Japan, 9-11 September, 2008) [Contributo in Atti di convegno]
E. Gnani; S. Reggiani; A. Gnudi; M. Rudan; G. Baccarani, Scaling Properties of Silicon Nanowire and Carbon-Nanotube FETs, «JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE», 2008, 5, pp. 1145 - 1151 [articolo]
M. Lenzi; A. Gnudi; S. Reggiani; E. Gnani; M. Rudan; G. Baccarani, Semiclassical Transport in Silicon Nanowire FETs including Surface Roughness, «JOURNAL OF COMPUTATIONAL ELECTRONICS», 2008, 7, pp. 355 - 358 [articolo]
G. Baccarani; E. Gnani; A. Gnudi; S. Reggiani; M. Rudan, Theoretical foundations of the quantum drift-diffusion and density-gradient models, «SOLID-STATE ELECTRONICS», 2008, 52, pp. 526 - 532 [articolo]
R. Grassi; S. Poli; E Gnani; A. Gnudi; S. Reggiani; G. Baccarani, Tight-binding and effective mass modeling of armchair carbon nanoribbon FETs, in: Proceedings of the 9th International Conference on Ultimate Integration on Silicon, UDINE, s.n, 2008, pp. 121 - 124 (atti di: 9th International Con-ference on Ultimate Integration on Silicon (ULIS 2008), Udine, 12-14 March, 2008.) [Contributo in Atti di convegno]
Silvestri L.; Reggiani S.; Gnani E.; Gnudi A.; Baccarani G., Unified model for low-field electron mobility in bulk and SOI-MOSFETs with different substrate orientations and its application to quantum drift-diffusion simulation, in: ULIS 2008 - 9th International Conference on ULtimate Integration of Silicon, 2008, pp. 129 - 132 (atti di: 9th International Conference on ULtimate Integration of Silicon, ULIS 2008, Udine, Italy, 2008) [Contributo in Atti di convegno]
L. Silvestri; S. Reggiani; E. Gnani; A. Gnudi; G. Baccarani, Unified model for low-field mobility in bulk and SOI-MOSFETs with different substrate orientations and its application to quantum drift-diffusion simulation, in: Proceedings of the 9th International Conference on Ultimate Integration on Silicon pp. 129-132, 2008., UDINE, s.n, 2008, pp. 129 - 132 (atti di: 9th International Conference on Ultimate Integration on Silicon (ULIS 2008), Udine, 12-14 March 2008) [Contributo in Atti di convegno]
M. Lenzi; E. Gnani; S. Reggiani; A. Gnudi; M. Rudan; G. Baccarani, A deterministic solution of the Boltzmann transport equation for a one-dimensional electron gas in silicon nanowires, in: Proceedings of the 8th International Conference on Ultimate Integration on Silicon, s.l, s.n, 2007, pp. 47 - 50 (atti di: 8th International Conference on Ultimate Integration on Silicon (ULIS 2007), Leuven, Belgium, 15-16 March, 2007) [Contributo in Atti di convegno]
E. Gnani; A. Gnudi; S. Reggiani; M. Rudan; G. Baccarani, A new solution method of the 1D open-boundary Schrödinger equation for transport in NW-FETs including band effects, in: Abstracts of the 12th International Workshop on Computational Electronics (IWCE-12), s.l, s.n, 2007, pp. 1 - 1 (atti di: 12th International Workshop on Computational Electronics (IWCE-12), Amherst, USA, 8-10 October, 2007) [Contributo in Atti di convegno]
E. Gnani; A. Gnudi; S. Reggiani; M. Rudan; G. Baccarani, Band Structure Effects on the Current-Voltage Characteristics of SNW-FETs, in: Technical Digest of the International Electron Device Meeting (IEDM 2007), s.l, s.n, 2007, pp. 101 - 104 (atti di: International Electron Device Meeting (IEDM 2007), Washington, USA, 10-12 December, 2007) [Contributo in Atti di convegno]
