M.Zanuccoli; H.-W. Guo; E. Sangiorgi; C. Fiegna, Three-Dimensional Numerical Simulation of Rear Point Contact Crystalline Silicon Solar Cells, in: ICREPQ'11 - CDROM, LAS PALMAS DE GRAN CANARIAS, Europ. Assoc. for the Develop. of Renewable Energ., 2011, pp. 424-1 - 424-4 (atti di: International Conference on renewable Energies and Power Quality 2011, Las Palmas Gran Canarias, 13 - 15 Aprile 2011) [Contributo in Atti di convegno]
Magnone P.; De Rose R.; Zanuccoli M.; Tonini D.; Galiazzo M.; Cellere G.; Guo H.; Frei M.; Sangiorgi E.; Fiegna C., Understanding the impact of double screen-printing on silicon solar cells by 2-D numerical simulations, in: Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE, s.l, IEEE Conference Publications, 2011, pp. 002177 - 002180 (atti di: Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE, Seattle, WA, 19-24 June 2011) [Contributo in Atti di convegno]
De Rose R.; Zanuccoli M.; Magnone P.; Tonini D.; Galiazzo M.; Cellere G.; Frei M.; Guo H.-W.; Fiegna C.; Sangiorgi E., 2-D Numerical analysis of the impact of the highly-doped profile on selective emitter solar cell performance, in: Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE, s.l, IEEE Conference Publications, 2011, pp. 002556 - 002559 (atti di: Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE, Seattle, WA, 19-24 June 2011) [Contributo in Atti di convegno]
M. Braccioli; A. Scholten; G. Curatola; E. Sangiorgi; C. Fiegna, AC and DC numerical simulation of Self–Heating Effects in FinFETs, in: Proceedings of the 11th International Conference on Ultimate Integration on Silicon, GLASGOW, s.n, 2010, pp. 81 - 84 (atti di: 11th International Conference on Ultimate Integration on Silicon (ULIS 2010), Glasgow, UK, 18th - 19th March 2010) [Contributo in Atti di convegno]
I. Semenikhin; M. Zanuccoli; V. Vyurkov; E. Sangiorgi; C. Fiegna, Application of RCWA method to optoelectronic numerical simulations of 2D nanostructures, in: IEEE 4th International Nanoelectronics Conference (INEC), 2011, s.l, IEEE, 2010, pp. 1 - 2 (atti di: IEEE 4th International Nanoelectronics Conference (INEC), 2011, Taiwan, 21-24 June 2011) [atti di convegno-abstract]
Bufler F.M.; Aubry-Fortuna V.; Bournel A.; Braccioli M.;
Dollfus P.; Esseni D.; Fiegna C.; Gamiz F.; De Michielis M.;
Palestri P.; Saint-Martin J.; Sampedro C.; Sangiorgi E.;
Selmi L.; Toniutti P., Comparison of semiclassical transport
formulations including quantum corrections for
advanced devices with High-K gate stacks, in: Proceedings of the 14th International Workshop on Computational Electronics IWCE. 2010, PISCATAWAY, IEEE, 2010, pp. 1 - 4 (atti di: 14th International Workshop on Computational Electronics IWCE., Pisa, Italy., October 27-29, 2010) [Contributo in Atti di convegno]
Sangiorgi E.; Alexander C.; Asenov A.; Aubry-Fortuna V.; Baccarani G.; Bournel A.; Braccioli M.; Cheng B.; Dollfus P.; Esposito A.; Esseni D.; Fenouillet-Beranger C.; Fiegna C.; Fiori G.; Ghetti A.; Iannaccone G.; Martinez A.; Majkusiak B.; Monfray S.; Palestri P.; Peikert V.;
Reggiani S.; Riddet C.; Saint-Martin J.; Schenk A.; Selmi L.; Silvestri L.; Toniutti P.; Walczak J.;, Drain current computation in nanoscale nMOSFETs: Comparison of transport models, in: Proceedings (MIEL), 2010 27th International Conference on Microelectronics, PISCATAWAY, IEEE, 2010, pp. 3 - 7 (atti di: 27th International Conference on Microelectronics, Nis, May 2010) [Contributo in Atti di convegno]
I. Semenikhin; V. Vyurkov; M. Zanuccoli; E. Sangiorgi; C. Fiegna, Efficient Implementation of the Fourier Modal Method (RCWA) for the Optical Simulation of Optoelectronics Devices, in: 2010 14th International Workshop on Computational Electronics IWCE, s.l, IEEE, 2010, pp. 1 - 4 (atti di: 2010 14th International Workshop on Computational Electronics IWCE, Pisa, Italy, October 27-29, 2010) [Contributo in Atti di convegno]
N. Zanolla; D . Šiprak; M. Tiebout; P. Baumgartner; E. Sangiorgi; C. Fiegna, Reduction of RTS Noise in Small-Area MOSFETs Under Switched Bias Conditions and Forward Substrate Bias, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2010, 57, pp. 1119 - 1128 [articolo]
U. Roy; E. Sangiorgi; C. Fiegna, Self-Heating Effects in Analog Bulk and SOI CMOS Circuits, in: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology Proceedings, s.l, IEEE Press, 2010, pp. 1782 - 1785 (atti di: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Shanghai, China, November 1-4, 2010) [Contributo in Atti di convegno]
U. Roy; M. Braccioli; E. Sangiorgi; C. Fiegna, Simulation of Bulk and SOI Digital Circuits Including Self-Heating Effects, in: Proceedings of the Sixth Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits, GRENOBLE, s.n, 2010, pp. 111 - 112 (atti di: Sixth Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits, Greboble, France, 25-27 January 2010) [atti di convegno-abstract]
E. Sangiorgi; M. Braccioli; C. Fiegna, Simulation of self-heating effects in different SOI MOS architectures, in: From Nanophotonics to Sensors to Energy, HOBOKEN, NEW JERSEY, John Wiley & Sons. Inc. - IEEE Press, 2010, pp. 159 - 170 (Future Trends in Microelectronics) [capitolo di libro]
Zanuccoli M.; Bresciani P. F.; Frei M.; Guo H.-W.; Fang H.; Agrawal M.; Fiegna C.; Sangiorgi E., 2-D numerical simulation and modeling of monocrystalline selective emitter solar cells, in: Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE, s.l, IEEE, 2010, pp. 2262 - 2265 (atti di: 35th IEEE Photovoltaic Specialists Conference (PVSC), Honolulu, Hawaii, USA, June 20-25, 2010) [Contributo in Atti di convegno]
P. Palestri; C. Alexander; A. Asenov; V. Aubry-Fortuna; G. Baccarani; A. Bournel; M. Braccioli; B. Cheng; P. Dollfus; A. Esposito; D. Esseni; C. Fenouillet-Beranger; C. Fiegna; G. Fiori; A. Ghetti; G. Iannaccone; A. Martinez; B. Majkusiak; S. Monfray; V. Peikert; S. Reggiani; C. Riddet; J. Saint-Martin; E. Sangiorgi; A. Schenk; L. Selmi; L. Silvestri; P. Toniutti; J. Walczak, A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs, «SOLID-STATE ELECTRONICS», 2009, 53, pp. 1293 - 1302 [articolo]
P. Palestri; C. Alexander; A. Asenov; G. Baccarani; A. Bournel; M. Braccioli; B. Cheng; P. Dollfus; A. Esposito; D. Esseni; A. Ghetti; C. Fiegna; G. Fiori; V. Aubry-Fortuna; G. Iannaccone; A. Martinez; B. Majkusiak; S. Monfray; S. Reggiani; C. Riddet; J. Saint-Martin; E. Sangiorgi; A. Schenk; L. Selmi; L. Silvestri; J. Walczak, Comparison of Advanced Transport Models for Nanoscale nMOSFETs, in: Proceeding of ULIS 2009, AACHEN, s.n, 2009, pp. 125 - 128 (atti di: Ultimate Integration on Silicon Conference (ULIS 2009), Aachen, Germany, 18-21 marzo, 2009) [Contributo in Atti di convegno]
