Foto del docente

Claudio Fiegna

Full Professor

Department of Electrical, Electronic, and Information Engineering "Guglielmo Marconi"

Academic discipline: ING-INF/01 Electronic Engineering

Director of Organisational Unit (UOS) Cesena of Department of Electrical, Electronic, and Information Engineering "Guglielmo Marconi"

Publications

Tallarico A.N.; Millesimo M.; Bakeroot B.; Borga M.; Posthuma N.; Decoutere S.; Sangiorgi E.; Fiegna C., TCAD Modeling of the Dynamic VTH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2022, 69, pp. 507 - 513 [Scientific article]

Millesimo M.; Fiegna C.; Posthuma N.; Borga M.; Bakeroot B.; Decoutere S.; Tallarico A.N., High-Temperature Time-Dependent Gate Breakdown of p-GaN HEMTs, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2021, 68, pp. 5701 - 5706 [Scientific article]

Tallarico A.N.; Reggiani S.; Depetro R.; Croce G.; Sangiorgi E.; Fiegna C., Full Understanding of Hot Electrons and Hot/Cold Holes in the Degradation of p-channel Power LDMOS Transistors, in: 2020 IEEE International Reliability Physics Symposium Proceedings (IRPS), Piscatawey, Institute of Electrical and Electronics Engineers Inc., 2020, 2020, pp. 1 - 5 (atti di: 2020 IEEE International Reliability Physics Symposium, IRPS 2020, USA, E. NETWORK, 28.04-30.05.2020) [Contribution to conference proceedings]Open Access

Tallarico A.N.; Posthuma N.E.; Bakeroot B.; Decoutere S.; Sangiorgi E.; Fiegna C., Role of the AlGaN barrier on the long-term gate reliability of power HEMTs with p-GaN gate, «MICROELECTRONICS RELIABILITY», 2020, 114, Article number: 113872 , pp. 1 - 5 [Scientific article]

Giuliano F.; Magnone P.; Pistollato S.; Tallarico A.N.; Reggiani S.; Fiegna C.; Depetro R.; Rossetti M.; Croce G., TCAD simulation of hot-carrier stress degradation in split-gate n-channel STI-LDMOS transistors, «MICROELECTRONICS RELIABILITY», 2020, 109, Article number: 113643 , pp. 1 - 5 [Scientific article]

Cornigli D.; Tallarico A.N.; Reggiani S.; Fiegna C.; Sangiorgi E.; Sanchez L.; Valdivieso C.; Consentino G.; Crupi F., Characterization and Modeling of BTI in SiC MOSFETs, in: European Solid-State Device Research Conference, Editions Frontieres, 2019, 2019-, pp. 82 - 85 (atti di: 49th European Solid-State Device Research Conference, ESSDERC 2019, Cracow, POLAND, SEP 23-26, 2019) [Contribution to conference proceedings]Open Access

Tallarico A.N.; Stoffels S.; Posthuma N.; Bakeroot B.; Decoutere S.; Sangiorgi E.; Fiegna C., Gate Reliability of p-GaN HEMT with Gate Metal Retraction, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2019, 66, Article number: 8842623 , pp. 4829 - 4835 [Scientific article]

Stoffels S.; Posthuma N.; Decoutere S.; Bakeroot B.; Tallarico A.N.; Sangiorgi E.; Fiegna C.; Zheng J.; Ma X.; Borga M.; Fabris E.; Meneghini M.; Zanoni E.; Meneghesso G.; Priesol J.; Satka A., Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability, in: IEEE International Reliability Physics Symposium Proceedings, Institute of Electrical and Electronics Engineers Inc., 2019, 2019-, pp. 1 - 10 (atti di: 2019 IEEE International Reliability Physics Symposium, IRPS 2019, usa, 2019) [Contribution to conference proceedings]

F. Giuliano, A. N. Tallarico, S. Reggiani, A. Gnudi, E. Sangiorgi, C. Fiegna, M. Rossetti, A. Molfese, S. Manzini, R. Depetro, G. Croce, TCAD predictions of hot-electron injection in p-type LDMOS transistors, in: ESSDERC 2019 49th European Solid State Device Research Conference (ESSDERC), 2019, pp. 86 - 89 (atti di: ESSDERC 2019, Cracovia, 23-26/09/2019) [Contribution to conference proceedings]

Tallarico A.N.; Stoffels S.; Posthuma N.; Decoutere S.; Sangiorgi E.; Fiegna C., Threshold Voltage Instability in GaN HEMTs with p-Type Gate: Mg Doping Compensation, «IEEE ELECTRON DEVICE LETTERS», 2019, 40, Article number: 8636498 , pp. 518 - 521 [Scientific article]Open Access

Cianci, E.*; Lamperti, A.; Tallarida, G.; Zanuccoli, M.; Fiegna, C.; Lamagna, L.; Losa, S.; Rossini, S.; Vercesi, F.; Gatti, D.; Wiemer, C., Advanced protective coatings for reflectivity enhancement by low temperature atomic layer deposition of HfO2on Al surfaces for micromirror applications, «SENSORS AND ACTUATORS. A, PHYSICAL», 2018, 282, pp. 124 - 131 [Scientific article]

Massimo, Nicolai; Mauro, Zanuccoli; Frank, Feldmann; Martin, Hermle; Claudio, Fiegna, Analysis of Silicon Solar Cells With Poly-Si/SiOx Carrier-Selective Base and Emitter Contacts, «IEEE JOURNAL OF PHOTOVOLTAICS», 2018, 8, pp. 103 - 109 [Scientific article]Open Access

Tallarico, Andrea Natale*; Reggiani, Susanna; Depetro, Riccardo; Manzini, Stefano; Torti, Andrea Mario; Croce, Giuseppe; Sangiorgi, Enrico; Fiegna, Claudio, Hot-carrier degradation in power LDMOS: Drain bias dependence and lifetime evaluation, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2018, 65, Article number: 8458210 , pp. 5195 - 5198 [Scientific article]Open Access

Tallarico, Andrea Natale*; Reggiani, Susanna; Depetro, Riccardo; Torti, Andrea Mario; Croce, Giuseppe; Sangiorgi, Enrico; Fiegna, Claudio, Hot-Carrier Degradation in Power LDMOS: Selective LOCOS-Versus STI-Based Architecture, «IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY», 2018, 6, Article number: 8255610 , pp. 219 - 226 [Scientific article]Open Access

Tallarico, Andrea Natale; Stoffels, Steve; Posthuma, Niels; Magnone, Paolo; Marcon, Denis; Decoutere, Stefaan; Sangiorgi, Enrico; Fiegna, Claudio, PBTI in GaN-HEMTs With p-Type Gate: Role of the Aluminum Content on ΔVTH and Underlying Degradation Mechanisms, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2018, 65, pp. 38 - 44 [Scientific article]

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