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Claudio Fiegna

Professore ordinario

Dipartimento di Ingegneria dell'Energia Elettrica e dell'Informazione "Guglielmo Marconi"

Settore scientifico disciplinare: ING-INF/01 ELETTRONICA

Responsabile unità organizzativa di sede (UOS) Cesena — Dipartimento di Ingegneria dell'Energia Elettrica e dell'Informazione "Guglielmo Marconi"

Pubblicazioni

Ercolano F.; Tallarico A.N.; Millesimo M.; Gnani E.; Reggiani S.; Fiegna C.; Borga M.; Posthuma N.; Bakeroot B., GaN HEMT with p-Type Schottky Gate: A Case Study of TCAD Modeling of the Gate Leakage Current, in: Proceedings of SIE 2023 54th Annual Meeting of the Italian Electronics Society, Springer Science and Business Media Deutschland GmbH, «LECTURE NOTES IN ELECTRICAL ENGINEERING», 2024, 1113, pp. 288 - 297 (atti di: 54th Annual Meeting of the Italian Electronics Society, SIE 2023, Noto (SR), Italy, 6/8 September 2023) [Contributo in Atti di convegno]

Capasso G.; Zanuccoli M.; Tallarico A.N.; Fiegna C., In-Circuit Assessment of the Long-Term Reliability of E-Mode GaN HEMTs, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2023, 70, pp. 5807 - 5813 [articolo]

Volosov V.; Cascino S.; Saggio M.; Imbruglia A.; Di Giovanni F.; Fiegna C.; Sangiorgi E.; Tallarico A.N., Role of interface/border traps on the threshold voltage instability of SiC power transistors, «SOLID-STATE ELECTRONICS», 2023, 207, Article number: 108699, pp. 1 - 4 [articolo]

Millesimo M.; Borga M.; Valentini L.; Bakeroot B.; Posthuma N.; Vohra A.; Decoutere S.; Fiegna C.; Tallarico A.N., Role of the GaN-on-Si Epi-Stack on Δ RONCaused by Back-Gating Stress, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2023, 70, pp. 5203 - 5209 [articolo]

Capasso G.; Zanuccoli M.; Tallarico A.N.; Fiegna C., A novel approach to analyze the reliability of GaN power HEMTs operating in a DC-DC Buck converter, in: European Solid-State Device Research Conference, Editions Frontieres, «PROCEEDINGS OF THE EUROPEAN SOLID STATE DEVICE RESEARCH CONFERENCE», 2022, 2022-, pp. 392 - 395 (atti di: 52nd IEEE European Solid-State Device Research Conference, ESSDERC 2022, Milan, italy, 09/2022) [Contributo in Atti di convegno]

Millesimo M.; Bakeroot B.; Borga M.; Posthuma N.; Decoutere S.; Sangiorgi E.; Fiegna C.; Tallarico A.N., Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition, in: IEEE International Reliability Physics Symposium Proceedings, Institute of Electrical and Electronics Engineers Inc., «IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS», 2022, 2022-, pp. 10B.2-1 - 10B.2-6 (atti di: 2022 IEEE International Reliability Physics Symposium, IRPS 2022, Dallas, TX, USA, March 2022) [Contributo in Atti di convegno]

Tallarico A.N.; Millesimo M.; Bakeroot B.; Borga M.; Posthuma N.; Decoutere S.; Sangiorgi E.; Fiegna C., TCAD Modeling of the Dynamic VTH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2022, 69, pp. 507 - 513 [articolo]Open Access

Millesimo M.; Borga M.; Bakeroot B.; Posthuma N.; Decoutere S.; Sangiorgi E.; Fiegna C.; Tallarico A.N., The Role of Frequency and Duty Cycle on the Gate Reliability of p-GaN HEMTs, «IEEE ELECTRON DEVICE LETTERS», 2022, 43, pp. 1846 - 1849 [articolo]Open Access

Millesimo M.; Fiegna C.; Posthuma N.; Borga M.; Bakeroot B.; Decoutere S.; Tallarico A.N., High-Temperature Time-Dependent Gate Breakdown of p-GaN HEMTs, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2021, 68, Article number: 9540042, pp. 5701 - 5706 [articolo]Open Access

Tallarico A.N.; Reggiani S.; Depetro R.; Croce G.; Sangiorgi E.; Fiegna C., Full Understanding of Hot Electrons and Hot/Cold Holes in the Degradation of p-channel Power LDMOS Transistors, in: 2020 IEEE International Reliability Physics Symposium Proceedings (IRPS), Piscatawey, Institute of Electrical and Electronics Engineers Inc., «IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS», 2020, 2020, pp. 1 - 5 (atti di: 2020 IEEE International Reliability Physics Symposium, IRPS 2020, USA, E. NETWORK, 28.04-30.05.2020) [Contributo in Atti di convegno]Open Access

Tallarico A.N.; Posthuma N.E.; Bakeroot B.; Decoutere S.; Sangiorgi E.; Fiegna C., Role of the AlGaN barrier on the long-term gate reliability of power HEMTs with p-GaN gate, «MICROELECTRONICS RELIABILITY», 2020, 114, Article number: 113872, pp. 1 - 5 [articolo]Open Access

Giuliano F.; Magnone P.; Pistollato S.; Tallarico A.N.; Reggiani S.; Fiegna C.; Depetro R.; Rossetti M.; Croce G., TCAD simulation of hot-carrier stress degradation in split-gate n-channel STI-LDMOS transistors, «MICROELECTRONICS RELIABILITY», 2020, 109, Article number: 113643, pp. 1 - 5 [articolo]Open Access

Cornigli D.; Tallarico A.N.; Reggiani S.; Fiegna C.; Sangiorgi E.; Sanchez L.; Valdivieso C.; Consentino G.; Crupi F., Characterization and Modeling of BTI in SiC MOSFETs, in: European Solid-State Device Research Conference, Editions Frontieres, «PROCEEDINGS OF THE EUROPEAN SOLID STATE DEVICE RESEARCH CONFERENCE», 2019, 2019-, pp. 82 - 85 (atti di: 49th European Solid-State Device Research Conference, ESSDERC 2019, Cracow, POLAND, SEP 23-26, 2019) [Contributo in Atti di convegno]Open Access

Tallarico A.N.; Stoffels S.; Posthuma N.; Bakeroot B.; Decoutere S.; Sangiorgi E.; Fiegna C., Gate Reliability of p-GaN HEMT with Gate Metal Retraction, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2019, 66, Article number: 8842623, pp. 4829 - 4835 [articolo]

Stoffels S.; Posthuma N.; Decoutere S.; Bakeroot B.; Tallarico A.N.; Sangiorgi E.; Fiegna C.; Zheng J.; Ma X.; Borga M.; Fabris E.; Meneghini M.; Zanoni E.; Meneghesso G.; Priesol J.; Satka A., Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability, in: IEEE International Reliability Physics Symposium Proceedings, Institute of Electrical and Electronics Engineers Inc., «IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS», 2019, 2019-, pp. 1 - 10 (atti di: 2019 IEEE International Reliability Physics Symposium, IRPS 2019, usa, 2019) [Contributo in Atti di convegno]

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