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Tallarico A.N.; Stoffels S.; Posthuma N.; Decoutere S.; Sangiorgi E.; Fiegna C., Threshold Voltage Instability in GaN HEMTs with p-Type Gate: Mg Doping Compensation, «IEEE ELECTRON DEVICE LETTERS», 2019, 40, Article number: 8636498, pp. 518 - 521 [articolo]Open Access
Cianci, E.*; Lamperti, A.; Tallarida, G.; Zanuccoli, M.; Fiegna, C.; Lamagna, L.; Losa, S.; Rossini, S.; Vercesi, F.; Gatti, D.; Wiemer, C., Advanced protective coatings for reflectivity enhancement by low temperature atomic layer deposition of HfO2on Al surfaces for micromirror applications, «SENSORS AND ACTUATORS. A, PHYSICAL», 2018, 282, pp. 124 - 131 [articolo]
Massimo, Nicolai; Mauro, Zanuccoli; Frank, Feldmann; Martin, Hermle; Claudio, Fiegna, Analysis of Silicon Solar Cells With Poly-Si/SiOx Carrier-Selective Base and Emitter Contacts, «IEEE JOURNAL OF PHOTOVOLTAICS», 2018, 8, pp. 103 - 109 [articolo]Open Access
Tallarico, Andrea Natale*; Reggiani, Susanna; Depetro, Riccardo; Manzini, Stefano; Torti, Andrea Mario; Croce, Giuseppe; Sangiorgi, Enrico; Fiegna, Claudio, Hot-carrier degradation in power LDMOS: Drain bias dependence and lifetime evaluation, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2018, 65, Article number: 8458210, pp. 5195 - 5198 [articolo]Open Access
Tallarico, Andrea Natale*; Reggiani, Susanna; Depetro, Riccardo; Torti, Andrea Mario; Croce, Giuseppe; Sangiorgi, Enrico; Fiegna, Claudio, Hot-Carrier Degradation in Power LDMOS: Selective LOCOS-Versus STI-Based Architecture, «IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY», 2018, 6, Article number: 8255610, pp. 219 - 226 [articolo]Open Access
Tallarico, Andrea Natale; Stoffels, Steve; Posthuma, Niels; Magnone, Paolo; Marcon, Denis; Decoutere, Stefaan; Sangiorgi, Enrico; Fiegna, Claudio, PBTI in GaN-HEMTs With p-Type Gate: Role of the Aluminum Content on ΔVTH and Underlying Degradation Mechanisms, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2018, 65, pp. 38 - 44 [articolo]
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Nicolai, Massimo; Paternoster, Giovanni; Zanuccoli, Mauro; de Ceglia, Giuseppe; Bellutti, Pierluigi; Ferrario, Lorenza; Sangiorgi, Enrico; Fiegna, Claudio, Analysis of the EWT-DGB solar cell at low and medium concentration and comparison with a PESC architecture, «PROGRESS IN PHOTOVOLTAICS», 2017, 25, pp. 417 - 430 [articolo]
Magnone, P.; Traverso, P.A.; Fiegna, C., Experimental technique for the performance evaluation and optimization of 1/f noise spectrum investigation in electron devices, «MEASUREMENT», 2017, 98, pp. 421 - 428 [articolo]
Stoffels, S.; Bakeroot, B.; Wu, T. L.; Marcon, D.; Posthuma, N. E.; Decoutere, S.; Tallarico, A. N.; Fiegna, C., Failure mode for p-GaN gates under forward gate stress with varying Mg concentration, in: IEEE International Reliability Physics Symposium Proceedings, Institute of Electrical and Electronics Engineers Inc., 2017, pp. 4B4.1 - 4B4.9 (atti di: 2017 International Reliability Physics Symposium, IRPS 2017, Monterey, USA, April 2017) [Contributo in Atti di convegno]
Tallarico, A. N.; Reggiani, S.; Magnone, P.; Croce, G.; Depetro, R.; Gattari, P.; Sangiorgi, E.; Fiegna, C., Investigation of the hot carrier degradation in power LDMOS transistors with customized thick oxide, «MICROELECTRONICS RELIABILITY», 2017, 76-77, pp. 475 - 479 [articolo]Open Access
Tallarico, Andrea Natale; Stoffels, Steve; Magnone, Paolo; Posthuma, Niels; Sangiorgi, Enrico; Decoutere, Stefaan; Fiegna, Claudio, Investigation of the p-GaN gate breakdown in forward-biased GaN-based power HEMTs, «IEEE ELECTRON DEVICE LETTERS», 2017, 38, pp. 99 - 102 [articolo]
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