N. Barin; P. Palestri ; D. Esseni ; C. Fiegna, Stability of Self-Consistent Monte-Carlo Simulations: Revised Analysis of Linear and Non-Linear Poisson Schemes, in: Workshop on Modeling and Simulation of Electron Devices, PISA, Università di Pisa, 2005(atti di: Workshop on Modeling and Simulation of Electron Devices, Pisa, 4-5 Luglio 2005) [Contributo in Atti di convegno]
C. Fiegna; E. Sangiorgi, ULIS 2005, BOLOGNA, ARCES, Università di Bologna, 2005, pp. 169 . [curatela]
Palestri P.; Esseni D.; Eminente S.; Fiegna C.; Sangiorgi E.; Selmi L., Understandig Quasi-Ballistics Trasport in Nano-MOSFETS: Part I Scattering in the Channel and in the Drain, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2005, 52, pp. 2727 - 2735 [articolo]
Eminente S.; Esseni D.; Palestri P.; Fiegna C.; Selmi L.; Sangiorgi E., Understandig quasi-ballistics trasport in nano-MOSFETS: Part II Technology scaling along the ITRS, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2005, 52, pp. 2736 - 2743 [articolo]
P. Palestri; D. Esseni; S. Eminente; C. Fiegna; E. Sangiorgi; L. Selmi, A Monte-Carlo study of the role of scattering in deca-nanometer MOSFETs, in: IEEE, IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, PISCATAWAY, NJ, IEEE, 2004, pp. 605 - 608 (atti di: 50th IEEE International Electron Devices Meeting, San Francisco, CA, DEC 13-15, 2004) [Contributo in Atti di convegno]
P. PALESTRI; S. EMINENTE; D. ESSENI; FIEGNA C.; E. SANGIORGI; L. SELMI, An improved semiclassical Monte-Carlo appproach for nano-scale MOSFET simulation, in: K. DE MEYER, N. COLLAERT, ULIS 2004 5th European Workshop on Ultimate Integration of Silicon, LEUVEN, K. De Meyer, N. Collaert, 2004, pp. 101 - 104 (atti di: 5th European Workshop on Ultimate Integration of Silicon, , ) [Contributo in Atti di convegno]
N. BARIN; FIEGNA C., Analysis of double-gate MOS structures by solving Poisson and Schroedinger equations with open boundaries, in: DE MEYER K.; COLLAERT N., ULIS 2004 5th European Workshop on Ultimate Integration of Silicon, LEUVEN, De Meyer K.; Collaert N., 2004, pp. 93 - 96 (atti di: 5th European Workshop on Ultimate Integration of Silicon, , ) [Contributo in Atti di convegno]
N. Barin; C. Fiegna; E. Sangiorgi, Analysis of strained-silicon-on-insulator double-gate MOS structures, in: Proceeding of the 34th European Solid-State Device Research Conference ESSDERC 2004, LEUVEN, R.P. Mertens, C. L. Claeys, 2004, pp. 169 - 172 (atti di: 34th European Solid-State Device Research Conference ESSDERC 2004, Leuven Belgium, 21-23 September 2004) [Contributo in Atti di convegno]
EMINENTE S.; ALESSANDRINI M.; FIEGNA C., Comparative analysis of the RF and noise performance of bulk and single-gate ultra-thin SOI MOSFETs by numerical simulation, «SOLID-STATE ELECTRONICS», 2004, 48, pp. 543 - 549 [articolo]
Alessandrini, M.; Esseni, David; Fiegna, Claudio, Development of an analytical mobility model for the simulation of ultra-thin single- and double-gate SOI MOSFETs, «SOLID-STATE ELECTRONICS», 2004, 48, pp. 589 - 595 [articolo]
S. Eminente; D. Esseni; P. Palestri; C. Fiegna; L. Selmi; E. Sangiorgi, Enhanced ballisticity in nano-MOSFETs along the ITRS roadmap: A Monte Carlo study, in: IEEE, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004, PISCATAWAY, NJ, IEEE, 2004, pp. 609 - 612 (atti di: 50th IEEE International Electron Devices Meeting, San Francisco, CA, 13-15 dicembre 2004) [Contributo in Atti di convegno]
N. Barin;C. Fiegna;D. Esseni;E. Sangiorgi, Evaluation of ultra-thin double gate MOSFET for the 45 nm technology node, in: Silicon-on-Insulator Technology and Devices XII, PENNINGTON, NJ, Electrochemical Society, 2004, pp. 45 - 50 (atti di: 207th ECS Meeting - Silicon-on-Insulator Technology and Devices XII, Quebec City, Canada, May 15-20) [Contributo in Atti di convegno]
