Foto del docente

Maurizio Millesimo

PhD Student

Department of Electrical, Electronic, and Information Engineering "Guglielmo Marconi"

Teaching tutor

Department of Electrical, Electronic, and Information Engineering "Guglielmo Marconi"

Research

Keywords: Reliability, p-GaN (HEMT), Degradation Mechanisms, Modeling

Experimental characterization and TCAD modeling of Gallium Nitride (GaN) based power High Electron Mobility Transistors (HEMTs) reliability:

  • Investigation of the trapping/detrapping mechanisms limiting performance and reliability of the power devices;
  • Development and/or calibration of physical models aimed at reproducing the devices degradation.

Examples of degradation mechanisms under investigation: Time Dependent Breakdown, Threshold Voltage Hysteresis, Interface Trap Charachterization, etc.

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