Millesimo M.; Bakeroot B.; Borga M.; Posthuma N.; Decoutere S.; Sangiorgi E.; Fiegna C.; Tallarico A.N., Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition, in: IEEE International Reliability Physics Symposium Proceedings, Institute of Electrical and Electronics Engineers Inc., 2022, 2022-, pp. 10B.2-1 - 10B.2-6 (atti di: 2022 IEEE International Reliability Physics Symposium, IRPS 2022, Dallas, TX, USA, March 2022) [Contribution to conference proceedings]
Tallarico A.N.; Millesimo M.; Bakeroot B.; Borga M.; Posthuma N.; Decoutere S.; Sangiorgi E.; Fiegna C., TCAD Modeling of the Dynamic VTH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2022, 69, pp. 507 - 513 [Scientific article]
Millesimo M.; Borga M.; Bakeroot B.; Posthuma N.; Decoutere S.; Sangiorgi E.; Fiegna C.; Tallarico A.N., The Role of Frequency and Duty Cycle on the Gate Reliability of p-GaN HEMTs, «IEEE ELECTRON DEVICE LETTERS», 2022, 43, pp. 1846 - 1849 [Scientific article]
Millesimo M.; Fiegna C.; Posthuma N.; Borga M.; Bakeroot B.; Decoutere S.; Tallarico A.N., High-Temperature Time-Dependent Gate Breakdown of p-GaN HEMTs, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2021, 68, pp. 5701 - 5706 [Scientific article]
Millesimo M.; Posthuma N.; Bakeroot B.; Borga M.; Decoutere S.; Tallarico A.N., Impact of structural and process variations on the time-dependent off-state breakdown of p-gan power hemts, «IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY», 2021, 21, Article number: 9311207 , pp. 57 - 63 [Scientific article]Open Access
