Millesimo, M.; Fiegna, C.; Bakeroot, B.; Borga, M.; Posthuma, N.; Decoutere, S.; Sangiorgi, E.; Tallarico, A. N., Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate, in: IEEE International Reliability Physics Symposium Proceedings, New York, Institute of Electrical and Electronics Engineers Inc., 2024, 5, pp. 1 - 6 (atti di: 2024 IEEE International Reliability Physics Symposium, IRPS 2024, USA, 14-18 of april 2024) [Contribution to conference proceedings]Open Access
Ercolano, F.; Tallarico, A. N.; Millesimo, M.; Gnani, E.; Reggiani, S.; Fiegna, C.; Borga, M.; Posthuma, N.; Bakeroot, B., GaN HEMT with p-Type Schottky Gate: A Case Study of TCAD Modeling of the Gate Leakage Current, in: Proceedings of SIE 2023 54th Annual Meeting of the Italian Electronics Society, Springer Science and Business Media Deutschland GmbH, 2024, 1113, pp. 288 - 297 (atti di: 54th Annual Meeting of the Italian Electronics Society, SIE 2023, Noto (SR), Italy, 6/8 September 2023) [Contribution to conference proceedings]
Tallarico A.N.; Millesimo M.; Borga M.; Bakeroot B.; Posthuma N.; Cosnier T.; Decoutere S.; Sangiorgi E.; Fiegna C., P-GaN Gate HEMTs: A Solution to Improve the High-Temperature Gate Lifetime, «IEEE ELECTRON DEVICE LETTERS», 2024, 45, Article number: 10587301 , pp. 1630 - 1633 [Scientific article]Open Access
Millesimo M.; Borga M.; Valentini L.; Bakeroot B.; Posthuma N.; Vohra A.; Decoutere S.; Fiegna C.; Tallarico A.N., Role of the GaN-on-Si Epi-Stack on Δ RONCaused by Back-Gating Stress, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2023, 70, Article number: 10225455 , pp. 5203 - 5209 [Scientific article]Open Access
Millesimo, M.; Bakeroot, B.; Borga, M.; Posthuma, N.; Decoutere, S.; Sangiorgi, E.; Fiegna, C.; Tallarico, A. N., Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition, in: IEEE International Reliability Physics Symposium Proceedings, Institute of Electrical and Electronics Engineers Inc., 2022, 2022-, pp. 10B.2-1 - 10B.2-6 (atti di: 2022 IEEE International Reliability Physics Symposium, IRPS 2022, Dallas, TX, USA, March 2022) [Contribution to conference proceedings]Open Access
Tallarico A.N.; Millesimo M.; Bakeroot B.; Borga M.; Posthuma N.; Decoutere S.; Sangiorgi E.; Fiegna C., TCAD Modeling of the Dynamic VTH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2022, 69, pp. 507 - 513 [Scientific article]Open Access
Millesimo, M.; Borga, M.; Bakeroot, B.; Posthuma, N.; Decoutere, S.; Sangiorgi, E.; Fiegna, C.; Tallarico, A. N., The Role of Frequency and Duty Cycle on the Gate Reliability of p-GaN HEMTs, «IEEE ELECTRON DEVICE LETTERS», 2022, 43, pp. 1846 - 1849 [Scientific article]Open Access
Millesimo M.; Fiegna C.; Posthuma N.; Borga M.; Bakeroot B.; Decoutere S.; Tallarico A.N., High-Temperature Time-Dependent Gate Breakdown of p-GaN HEMTs, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2021, 68, Article number: 9540042 , pp. 5701 - 5706 [Scientific article]Open Access
Millesimo M.; Posthuma N.; Bakeroot B.; Borga M.; Decoutere S.; Tallarico A.N., Impact of structural and process variations on the time-dependent off-state breakdown of p-gan power hemts, «IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY», 2021, 21, Article number: 9311207 , pp. 57 - 63 [Scientific article]Open Access
