Maurizio Millesimo is a PhD student in Electronics, Telecommunications and Information Technologies Engineering at the University of Bologna, since November 2020. He earned the master’s degree in Electronics and Telecommunications Engineering at the University of Bologna, in March 2020.
In the period 2019-2020, he was visiting student for six months at the IMEC vzw research Center, Belgium, working on GaN-based power devices reliability.
In April 2020 he joined as junior researcher the Advanced Research Center on Electronic Systems (ARCES) – University of Bologna working on Experimental Characterization and TCAD modeling of GaN-based High Electron Mobility Transistor (HEMT) with p-GaN gate technology.