Experimental characterization and TCAD modeling of Gallium Nitride (GaN) based power High Electron Mobility Transistors (HEMTs) reliability:
- Investigation of the trapping/detrapping mechanisms limiting performance and reliability of the power devices;
- Development and/or calibration of physical models aimed at reproducing the devices degradation.
Examples of degradation mechanisms under investigation: Time Dependent Breakdown, Threshold Voltage Hysteresis, Interface Trap Charachterization, etc.
