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Publications prior to 2004
Pubblicazioni su Riviste Internazionali
M. Lanzoni, M. Manfredi, L. Selmi, E. Sangiorgi, R.Capelletti
and B. Riccò, Hot-Electron induced Photon
Energies in n-channel MOSFET's operating at 77 and 300 K , IEEE
Electron Device Letters, Vol. EDL-10
n.5, May 1989, pp.173.
M. Lanzoni, R. Menozzi, P. Olivo, B. Riccò and A.
Haardt, Testing of E2PROM
Aging and Endurance: a Case Study , European Trans. on
Telecommunications, Vol. 1 n.2, March 1990, pp. 201.
R. Menozzi, M. Lanzoni, C. Fiegna, E. Sangiorgi and B. Riccò,
Latch-up testing in CMOS
ICs , IEEE Journal of Solid-State Circuits, Vol. SC-25,
NO.4, pp. 1010-1014, August 1990.
M.
Lanzoni, E. Sangiorgi, C. Fiegna, M. Manfredi and B. Riccò, Extended (1.1-2.9 eV)
Hot-Carrier Induced Photon Emission in n-Channel MOSFET's
, IEEE Electron Device
Letters, Vol. EDL-12 n.6, pp.341-343, June 1991.
M. Lanzoni, R. Menozzi, C. Riva, P. Olivo and B. Riccò, Evaluation of
E2PROM Data Retention by Field Acceleration ,
Quality and Reliability Engineering int. , Vol. 7 n. 4, July 1991, pp.341.
M. Lanzoni, J. Sunè, P. Olivo and B. Riccò, Advanced Electrical Level
Modeling of EEPROM Cells, IEEE Transaction on Electron Devices,
Vol. 40, No.5, pp. 951-957, May 1993.
J. Sunè, M. Lanzoni and P. Olivo, Temperature Dependence of
Fowler-Nordheim Injection from Accumulated n-type Silicon into
Silicon Dioxide,
IEEE Transaction on Electron Devices, Vol. 40, No.5 , pp.1017-1019,
May 1993.
M. Lanzoni, M. Favalli, M. Ambanelli, P. Olivo and B. Riccò, An Experimental study of
testing Techniques for Bridging Faults in CMOS ICs , IEEE
Journal of Solid State Circuits, Vol. 28, No. 6, pp. 686-690, June
1993.
L. Selmi, M. Lanzoni, S. Bigliardi and E. Sangiorgi, Photon Emission from
Sub-micron p-channel MOSFETs Biased at High Fields ,
Microelectronic Engineering, Vol. 19, pp. 747-750, 1992.
M. Lanzoni, L. Briozzo and B. Riccò, A Novel Approach to Controlled
Programming of Tunnel Based Floating Gate MOSFETs, IEEE Journal
of Solid State Circuits, Vol. 29, No. 2, pp. 147-150, February
1994.
M. Lanzoni, C.
Riva and P. Olivo, Characterization of Flash
Stuctures Erased with Ultra Short Pulses, Microelectronics
Journal, Vol. 25, pp. 491-494, 1994.
M. Lanzoni and B.
Riccò, Experimental
Characterization of Circuits for Controlled Programming of Floating-Gate
MOSFET's, IEEE Journal of Solid State Circuits, Vol. 30, No. 6,
pp. 706-709, June1995.
B. Riccò, G. Tondi and M. Lanzoni, Extraction of Oxide Thickness
from Harmonic Distortion of Displacement Currents in MOS Capacitors, IEEE
Transaction on Electron Devices, vol. 44, pp. 1552-1554, Sep.
1997.
M. Lanzoni, G. Tondi, P. Galbiati and B. Riccò, Automatic and Continuous Offset
Compensation of MOS Operational Amplifiers using Floating-Gate
Transistors, IEEE Journal of Solid State Circuits, Vol. 33, NO.
2, pp. 287-290, February 1998.
B. Riccò, G. Gozzi and M. Lanzoni, Modeling and simulation of
Stress-Induced Leakage Current in Ultra Thin SiO2 Films,
IEEE Transaction on Electron Devices, Vol. 45, NO. 7, pp.
1554-1560, July 1998.
B. Riccò, G. Torelli, M. Lanzoni, A. Manstretta, H.E. Maes,
D. Montanari and A. Modelli, Nonvolatile Multilevel Memories
for Digital Applications, Proceedings of the IEEE, Vol. 86,
NO.12, pp. 2399-2423 December 1998.
R. Versari, D. Esseni, G. Falavigna, M. Lanzoni and B. Riccò, Optimized Programming of
Multilevel Flash EEPROMs, IEEE Transactions on Electronic
Devices. Vol. 48, NO. 8, pp. 1641-1646, August 2001.
R. Versari, D. Esseni, G. Falavigna, M. Lanzoni and B. Riccò, Bandwidth Optimization of
Flash Memories with the RGP Techniques IEEE Transactions on
Electronic Devices. Vol.
48, NO. 8, pp. 1737-1740August 2001.
M. Grossi, M. Lanzoni and B. Riccò, Program Schemes for Multilevel
Flash Memories , Proceedings of the IEEE, Vol. 91 n.4, April
2003, pp.594-601.
M. Grossi, M. Lanzoni and B. Riccò, A Novel Algorithm for
High-throughput Programmino of Multilevel Flash Memories, IEEE Transaction on Electron
Devices, Vol. 50 n. 5, May 2003, pp. 1290-1296.
M. Grossi, M. Lanzoni
and B. Riccò, Erratic Cell Behavior in Channel Hot Electron
Programmino of NOR Flash Memories, IEEE Transaction on Electron
Devices, Vol. 51 n. 10, October 2004, pp. 1613-1620.