Foto del docente

Massimo Lanzoni

Professore associato confermato

Dipartimento di Ingegneria dell'Energia Elettrica e dell'Informazione "Guglielmo Marconi"

Settore scientifico disciplinare: ING-INF/01 ELETTRONICA

Pubblicazioni

vai alle Pubblicazioni

Pubblicazioni antecedenti il 2004

Pubblicazioni su Riviste Internazionali

 

 M. Lanzoni, M. Manfredi, L. Selmi, E. Sangiorgi, R.Capelletti and B. Riccò,  Hot-Electron induced Photon Energies in n-channel MOSFET's operating at 77 and 300 K , IEEE Electron Device Letters, Vol. EDL-10 n.5, May 1989, pp.173.    

 

 M. Lanzoni, R. Menozzi, P. Olivo, B. Riccò and A. Haardt,  Testing of E2PROM Aging and Endurance: a Case Study , European Trans. on Telecommunications, Vol. 1 n.2, March 1990, pp. 201.    

 

 R. Menozzi, M. Lanzoni, C. Fiegna, E. Sangiorgi and B. Riccò, Latch-up testing in CMOS ICs , IEEE Journal of Solid-State Circuits, Vol. SC-25, NO.4, pp. 1010-1014, August 1990.    

 

 M. Lanzoni, E. Sangiorgi, C. Fiegna, M. Manfredi  and B. Riccò, Extended (1.1-2.9 eV) Hot-Carrier Induced Photon Emission in n-Channel MOSFET's ,  IEEE Electron Device Letters, Vol. EDL-12 n.6, pp.341-343, June 1991.    

 

 M. Lanzoni, R. Menozzi, C. Riva, P. Olivo  and B. Riccò, Evaluation of E2PROM Data Retention by Field Acceleration , Quality and Reliability Engineering int. , Vol. 7 n. 4,  July 1991, pp.341.    

 

 M. Lanzoni, J. Sunè, P. Olivo and B. Riccò,  Advanced Electrical Level Modeling of EEPROM Cells, IEEE Transaction on Electron Devices, Vol. 40, No.5, pp. 951-957, May 1993.

 

 J. Sunè, M. Lanzoni and  P. Olivo, Temperature Dependence of Fowler-Nordheim Injection from Accumulated n-type Silicon into Silicon Dioxide,  IEEE Transaction on Electron Devices, Vol. 40, No.5 , pp.1017-1019, May 1993.

 

 M. Lanzoni, M. Favalli, M. Ambanelli, P. Olivo and B. Riccò, An Experimental study of testing Techniques for Bridging Faults in CMOS ICs , IEEE Journal of Solid State Circuits, Vol. 28, No. 6, pp. 686-690, June 1993.

 

 L. Selmi, M. Lanzoni, S. Bigliardi and E. Sangiorgi, Photon Emission from Sub-micron p-channel MOSFETs Biased at High Fields , Microelectronic Engineering, Vol. 19, pp. 747-750, 1992.

 

 M. Lanzoni, L. Briozzo  and B. Riccò, A Novel Approach to Controlled Programming of Tunnel Based Floating Gate MOSFETs, IEEE Journal of Solid State Circuits, Vol. 29, No. 2, pp. 147-150, February 1994.

 

 M. Lanzoni,  C. Riva and P. Olivo, Characterization of Flash Stuctures Erased with Ultra Short Pulses, Microelectronics Journal, Vol. 25, pp. 491-494, 1994.

 

 M. Lanzoni  and B. Riccò, Experimental Characterization of Circuits for Controlled  Programming of Floating-Gate MOSFET's, IEEE Journal of Solid State Circuits, Vol. 30, No. 6, pp. 706-709, June1995.

 

 B. Riccò, G. Tondi and M. Lanzoni, Extraction of Oxide Thickness from Harmonic Distortion of Displacement Currents in  MOS Capacitors, IEEE Transaction on Electron Devices, vol. 44, pp. 1552-1554, Sep. 1997.

 

 M. Lanzoni, G. Tondi, P. Galbiati and B. Riccò, Automatic and Continuous Offset Compensation of MOS Operational Amplifiers using Floating-Gate Transistors, IEEE Journal of Solid State Circuits, Vol. 33, NO. 2, pp. 287-290, February 1998.

 

 B. Riccò, G. Gozzi and M. Lanzoni,  Modeling and simulation of Stress-Induced Leakage Current in Ultra Thin  SiO2 Films, IEEE Transaction on Electron Devices, Vol. 45, NO. 7, pp. 1554-1560, July 1998.

 

 B. Riccò, G. Torelli, M. Lanzoni, A. Manstretta, H.E. Maes, D. Montanari and A. Modelli, Nonvolatile Multilevel Memories for Digital Applications, Proceedings of the IEEE, Vol. 86, NO.12, pp. 2399-2423 December 1998.

 

 R. Versari, D. Esseni, G. Falavigna, M. Lanzoni and  B. Riccò, Optimized Programming of Multilevel Flash EEPROMs, IEEE Transactions on Electronic Devices. Vol. 48, NO. 8, pp. 1641-1646, August 2001.

 

 R. Versari, D. Esseni, G. Falavigna, M. Lanzoni and  B. Riccò, Bandwidth Optimization of Flash Memories with the RGP Techniques IEEE Transactions on Electronic Devices. Vol. 48, NO. 8, pp. 1737-1740August 2001.

 M. Grossi, M. Lanzoni and B. Riccò,  Program Schemes for Multilevel Flash Memories , Proceedings of the IEEE, Vol. 91 n.4, April 2003, pp.594-601.

 

 M. Grossi, M. Lanzoni and B. Riccò, A Novel Algorithm for High-throughput Programmino of Multilevel Flash Memories,  IEEE Transaction on Electron Devices, Vol. 50 n. 5, May 2003, pp. 1290-1296.

 

 M. Grossi, M. Lanzoni and B. Riccò, Erratic Cell Behavior in Channel Hot Electron Programmino of NOR Flash Memories, IEEE Transaction on Electron Devices, Vol. 51 n. 10, October 2004, pp. 1613-1620.

 

Ultimi avvisi

Al momento non sono presenti avvisi.