Prof. Massimo Lanzoni was born in Bologna (Italy) on August 9th
1961. He received the ``Laurea in Ingegneria Elettronica'' from the
University of Bologna in 1987.
Since then he has been with the Microelectronics Research Group
at the Department of Electronics at the same University working on
research projects in the fields of the experimental
characterization and simulation of NV memory cells and MOS devices,
automatic test of VLSI devices and advanced instrumentation.
In particular his scientific interests cover the
characterization of thin dielectrics reliability, non-volatile
memory cell characteristics and reliability, MOS transistors
experimental characterization and new techniques for IC testing as
NV memories endurance testing and CMOS IC latch-up testing, modern
instrumentation, advanced sensors and sensor networks.
He is now involved in projects concerning applications of advanced
instrumentation and electronic design for industral and biomedical
applications.
