E. Gnani; A. Gnudi; S. Reggiani; G. Baccarani; J. Fu; N. Singh; G.Q. Lo; D.L. Kwong, Performance Analysis of Nonvolatile Gate-All-Around Charge-Trapping TAHOS Memory Cells, in: 2009 International Semiconductor Device Research Symposium Proceedings, COLLEGE PARK, Ken Jones, Zeynep Dilli, 2009, pp. 1 - 2 (atti di: 2009 International Semiconductor Device Research Symposium (ISDRS 2009), College Park, MD, USA, December 9-11, 2009) [Contribution to conference proceedings]
R. Grassi; A. Gnudi; S. Reggiani; E. Gnani; G. Baccarani, Simulation Study of Graphene Nanoribbon Tunneling
Transistors Including Edge Roughness Effects, in: Proceedings of the ULIS 2009, AACHEN, s.n, 2009, pp. 57 - 60 (atti di: Ultimate Integration on Silicon Conference (ULIS 2009), Aachen, Germany, 18-21 marzo, 2009) [Contribution to conference proceedings]
S. Reggiani; M. Denison; E. Gnani; A. Gnudi; G. Baccarani; S. Pendharkar; R. Wise, Theoretical Analysis of the Vertical LOCOS DMOS Transistor with Process-Induced Stress Enhancement, in: Proceedings of the 39th European Solid-State Device Research Conference, ATHENS, s.n, 2009, pp. 161 - 164 (atti di: European Solid-State Device Research Conference (ESSDERC 2009), Athens, 14-18 September, 2009) [Contribution to conference proceedings]
R. Grassi; S. Poli; E Gnani; A. Gnudi; S. Reggiani; G. Baccarani, Tight-binding and effective mass modeling of armchair carbon nanoribbon FETs, «SOLID-STATE ELECTRONICS», 2009, 53, pp. 462 - 467 [Scientific article]
E. Gnani; A. Gnudi; S. Reggiani; M. Luisier; G. Baccarani, Band Effects on the transport characteristics of ultra-scaled SNW-FETs, «IEEE TRANSACTIONS ON NANOTECHNOLOGY», 2008, 7, pp. 700 - 709 [Scientific article]
R. Grassi; A. Gnudi; E. Gnani; S. Reggiani; G. Baccarani, Carbon-based Nanoelectronic Devices for High-Performance Logic Applications, in: The 17th European Workshop on Heterostructure Technology Book of Abstracts, VENICE, CLEUP, 2008, pp. 3 - 7 (atti di: 17th European Workshop on Heterostructure Technology (HETECH 2008), Venice, 3-5 November 2008) [Contribution to conference proceedings]
S. Poli; S. Reggiani; A. Gnudi; E. Gnani; G. Baccarani, Computational study of the ultimate scaling limits of CNT tunneling devices, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2008, 55, pp. 313 - 321 [Scientific article]
L. Silvestri; S. Reggiani; E. Gnani; A. Gnudi; M. Rudan; G.Baccarani, Effects of channel orientation, high-k gate stacks and stress on UTB-FETs: a QDD simulation study, in: Proceedings of the IEEE International Workshop on Design and Test of Nano Devices, Circuits and Systems, BOSTON, MA, IEEE Press, 2008, pp. 7 - 10 (atti di: IEEE International Workshop on Design and Test of Nano Devices, Circuits and Systems (NDCS 2008), Boston, MA, 29-30 September 2008) [Contribution to conference proceedings]
R. Grassi; A. Gnudi; E. Gnani; S. Reggiani; G. Baccarani, Graphene Nanoribbon FETs for High-Performance Logic Applications: Perspectives and Challenges, in: 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings, BEIJING, IEEE Press, 2008, I, pp. 365 - 369 (atti di: 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT 2008), Beijing, 21-23 October, 2008) [Contribution to conference proceedings]
R. Grassi; A. Gnudi; E. Gnani; S. Reggiani; G. Cinacchi; G. Baccarani, Hierarchical modeling of carbon nanoribbon devices for CNR-FETs engineering, in: Conference Digest of the 66th IEEE Device Research Conference, SANTA BARBARA, CA, IEEE Press, 2008, pp. 105 - 106 (atti di: 66th IEEE Device Research Conference (DRC-2008), Santa Barbara, CA, 23-25 June 2008) [Contribution to conference proceedings]
M. Rudan; R. Katilius; S. Reggiani; E. Gnani; G. Baccarani, Impact-ionization coefficient in silicon at high fields: – A parametric approach, «JOURNAL OF COMPUTATIONAL ELECTRONICS», 2008, 7, pp. 151 - 154 [Scientific article]
M. Lenzi; P. Palestri; E. Gnani; S. Reggiani; A. Gnudi; D. Esseni; L. Selmi; G. Baccarani, Investigation of the Transport Properties of Silicon Nanowires Using Deterministic and Monte Carlo Approaches to the Solution of the Boltzmann Transport Equation, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2008, 55, pp. 2086 - 2096 [Scientific article]
E. Gnani; S. Reggiani; A. Gnudi; R. Colle; G. Baccarani, OH dangling-bond saturation and dielectric function effects in ultra-scaled SNW-FETs, in: Proceedings of the Device Research Conference, SANTA BARBARA, CA, IEEE Press, 2008, pp. 95 - 96 (atti di: Device Research Conference (DRC-2008), Santa Barbara, CA, 23-25 June, 2008) [Contribution to conference proceedings]
R. Grassi; S. Poli; S. Reggiani; E. Gnani; A. Gnudi; G. Baccarani, Phonon-scattering effects in CNT-FETs with different dimensions and dielectric materials, «SOLID-STATE ELECTRONICS», 2008, 52, pp. 1329 - 1335 [Scientific article]
E. Gnani; A. Gnudi; S. Reggiani; G. Baccarani, Quasi-Ballistic Tansport in Nanowire Field-Effect Transistors, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2008, 55, pp. 2918 - 2930 [Scientific article]
