Ercolano F.; Tallarico A.N.; Millesimo M.; Gnani E.; Reggiani S.; Fiegna C.; Borga M.; Posthuma N.; Bakeroot B., GaN HEMT with p-Type Schottky Gate: A Case Study of TCAD Modeling of the Gate Leakage Current, in: Proceedings of SIE 2023 54th Annual Meeting of the Italian Electronics Society, Springer Science and Business Media Deutschland GmbH, «LECTURE NOTES IN ELECTRICAL ENGINEERING», 2024, 1113, pp. 288 - 297 (atti di: 54th Annual Meeting of the Italian Electronics Society, SIE 2023, Noto (SR), Italy, 6/8 September 2023) [Contributo in Atti di convegno]
Gnudi A.; Gnani E.; Reggiani S.; Baccarani G., Application of the k ⋅ p Method to Device Simulation, in: Springer Handbooks, Cham, Springer Science and Business Media Deutschland GmbH, 2023, pp. 1491 - 1514 (SPRINGER HANDBOOKS) [capitolo di libro]
Giuliano, Federico; Reggiani, Susanna; Gnani, Elena; Gnudi, Antonio; Rossetti, Mattia; Depetro, Riccardo, Breakdown-Voltage Degradation Under AC Stress of Thick SiO2 Capacitors for Galvanic Insulation, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2023, 70, pp. 4953 - 4957 [articolo]
Gnani, Elena; Baccarani, Giorgio, Memory devices – Volatile memories, in: Encyclopedia of Condensed Matter Physics, Amsterdam, Elsevier, 2023, pp. 576 - 591 [voce di enciclopedia/dizionario]
Gnani, Elena; Baccarani, Giorgio, Memory devices—Non-volatile memories, in: Encyclopedia of Condensed Matter Physics, Amsterdam, Elsevier, 2023, pp. 552 - 575 [voce di enciclopedia/dizionario]
Balestra L.; Ercolano F.; Gnani E.; Reggiani S., TCAD Modeling of High-Field Electron Transport in Bulk Wurtzite GaN: The Full-Band SHE-BTE, «IEEE ACCESS», 2023, 11, pp. 6293 - 6298 [articolo]Open Access
Giuliano F.; Reggiani S.; Gnani E.; Gnudi A.; Rossetti M.; Depetro R.; Croce G., Characterization and numerical analysis of breakdown in thick amorphous SiO2 capacitors, «SOLID-STATE ELECTRONICS», 2022, 192, Article number: 108256, pp. 108256-1 - 108256-7 [articolo]
Balestra L.; Gnani E.; Reggiani S., Electron effective masses of Scx Al1- x N and Alx Ga1- x N from first-principles calculations of unfolded band structure, «JOURNAL OF APPLIED PHYSICS», 2022, 132, Article number: 215108, pp. 1 - 6 [articolo]Open Access
Balestra L.; Reggiani S.; Gnani E.; Gnudi A., Group velocity of electrons in 4H-SiC from Density Functional Theory simulations, «SOLID-STATE ELECTRONICS», 2022, 194, pp. 108338-1 - 108338-4 [articolo]
Balestra L.; Reggiani S.; Gnudi A.; Gnani E.; Dobrzynska J.; Vobecky J., On the breakdown voltage temperature dependence of high-voltage power diodes passivated with diamond-like carbon, «SOLID-STATE ELECTRONICS», 2022, 193, Article number: 108284, pp. 108284-1 - 108284-7 [articolo]
Zunarelli L.; Reggiani S.; Gnani E.; Sankaralingam R.; Dissegna M.; Boselli G., TCAD Investigation of Power-to-Failure Evaluation for Ultrafast Events in BJT-based ESD Protection Cells, in: IEEE International Reliability Physics Symposium Proceedings, Institute of Electrical and Electronics Engineers Inc., «IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS», 2022, 2022-, pp. 6C2-1 - 6C2-6 (atti di: 2022 IEEE International Reliability Physics Symposium, IRPS 2022, usa, 2022) [Contributo in Atti di convegno]
Giuliano F.; Reggiani S.; Gnani E.; Gnudi A.; Rossetti M.; Depetro R., Thickness-dependent dielectric breakdown in thick amorphous SiO2 capacitors, «SOLID-STATE ELECTRONICS», 2022, 194, Article number: 108363, pp. 108363-1 - 108363-5 [articolo]
Giuliano F.; Reggiani S.; Gnani E.; Gnudi A.; Rossetti M.; Depetro R.; Croce G., Constant-current time dependent dielectric breakdown in thick amorphous SiO2 capacitors, in: 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EuroSOI-ULIS 2021, Institute of Electrical and Electronics Engineers Inc., 2021, pp. 1 - 4 (atti di: 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EuroSOI-ULIS 2021, Caen, Francia, 1-3/09/2021) [Contributo in Atti di convegno]
Luigi Balestra; Susanna Reggiani; Antonio Gnudi; Elena Gnani; Jan Vobeck{'{y}}; Umamaheswara Vemulapati, Current Instabilities in Large-Area Silicon Diodes: An Accurate TCAD Approach, in: ISPS' 21 Proceedings, 2021, pp. 49 - 53 (atti di: 15th INTERNATIONAL SEMINAR ON POWER SEMICONDUCTORS, Prague, Czech Republic, 26 August - 27 August 2021) [Contributo in Atti di convegno]
Jungemann C.; Bonani F.; Cea S.M.; Gnani E.; Hong S.-M.; Jin S.; Liu X.; Moroz V.; Verhulst A., Foreword Special Issue on 'New Simulation Methodologies for Next-Generation TCAD Tools', «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2021, 68, pp. 5346 - 5349 [articolo]
