Foto del docente

Elena Gnani

Professoressa associata

Dipartimento di Ingegneria dell'Energia Elettrica e dell'Informazione "Guglielmo Marconi"

Settore scientifico disciplinare: ING-INF/01 ELETTRONICA

Direttrice Centro di Ricerca sui Sistemi Elettronici per l'Ingegneria dell'Informazione e delle Telecomunicazioni "Ercole De Castro" — ARCES (Advanced Research Center on Electronic System)

Pubblicazioni

Giuliano F.; Reggiani S.; Gnani E.; Gnudi A.; Rossetti M.; Depetro R.; Croce G., Constant-current time dependent dielectric breakdown in thick amorphous SiO2 capacitors, in: 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EuroSOI-ULIS 2021, Institute of Electrical and Electronics Engineers Inc., 2021, pp. 1 - 4 (atti di: 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EuroSOI-ULIS 2021, Caen, Francia, 1-3/09/2021) [Contributo in Atti di convegno]

Luigi Balestra; Susanna Reggiani; Antonio Gnudi; Elena Gnani; Jan Vobeck{'{y}}; Umamaheswara Vemulapati, Current Instabilities in Large-Area Silicon Diodes: An Accurate TCAD Approach, in: ISPS' 21 Proceedings, 2021, pp. 49 - 53 (atti di: 15th INTERNATIONAL SEMINAR ON POWER SEMICONDUCTORS, Prague, Czech Republic, 26 August - 27 August 2021) [Contributo in Atti di convegno]

Jungemann C.; Bonani F.; Cea S.M.; Gnani E.; Hong S.-M.; Jin S.; Liu X.; Moroz V.; Verhulst A., Foreword Special Issue on 'New Simulation Methodologies for Next-Generation TCAD Tools', «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2021, 68, pp. 5346 - 5349 [articolo]

Balestra L.; Reggiani S.; Gnudi A.; Gnani E.; Dobrzynska J.; Vobecky J., Influence of the DLC Passivation Conductivity on the Performance of Silicon High-Power Diodes over an Extended Temperature Range, «IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY», 2021, 9, pp. 431 - 440 [articolo]

Caruso E.; Esseni D.; Gnani E.; Lizzit D.; Palestri P.; Pin A.; Puglisi F.M.; Selmi L.; Zagni N., Modeling nanoscale iii–v channel mosfets with the self-consistent multi-valley/multi-subband monte carlo approach, «ELECTRONICS», 2021, 10, Article number: 2472, pp. 2472 - 2487 [articolo]

Giuliano F.; Reggiani S.; Gnani E.; Gnudi A.; Rossetti M.; Depetro R.; Croce G., Novel TCAD Approach for the Investigation of Charge Transport in Thick Amorphous SiO2 Insulators, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2021, 68, pp. 5438 - 5447 [articolo]

Balestra, Luigi; Reggiani, Susanna; Gnudi, Antonio; Gnani, Elena; Dobrzynska, Jagoda; Vobecky, Jan, On the Breakdown Voltage Temperature Dependence of High-Voltage Power Diode Passivated with Diamond-Like Carbon, in: 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS), 2021, pp. 1 - 4 (atti di: 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS), Caen, France, 1-3 Sept. 2021) [Contributo in Atti di convegno]

Reggiani, Susanna; Balestra, Luigi; Gnudi, Antonio; Gnani, Elena; Baccarani, Giorgio; Dobrzynska, Jagoda; Vobecky, Jan; Tosi, Carlo, TCAD Investigation of Differently-Doped DLC Passivation for Large-Area High-Power Diodes, «IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS», 2021, 9, pp. 2155 - 2162 [articolo]

Carapezzi S.; Reggiani S.; Gnani E.; Gnudi A., Electron mobility of strained InGaAs long-channel MOSFETs: From scattering rates to TCAD model, «SOLID-STATE ELECTRONICS», 2020, 172, Article number: 107902, pp. 1 - 7 [articolo]

Gnani E.; Malago P.; Gnudi A.; Reggiani S., New DG FeFET topology with enhanced SS and non-hysteretic behavior, «SOLID-STATE ELECTRONICS», 2020, 168, Article number: 107727, pp. 107727 - 107731 [articolo]

Carapezzi S.; Reggiani S.; Gnani E.; Gnudi A., TCAD Simulation Framework of Gas Desorption in CNT FET NO2Sensors, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2020, 67, Article number: 9199415, pp. 4682 - 4686 [articolo]

Luigi Balestra, Susanna Reggiani, Antonio Gnudi, Elena Gnani, Jagoda Dobrzynska, Jan Vobecký, TCAD Study of VLD Termination in Large-Area Power Devices Featuring a DLC Passivation, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2020, 67, pp. 4645 - 4648 [articolo]

Gnani E.; Malago P.; Reggiani S.; Gnudi A., New DG FeFET architecture with enhanced SS and non-hysteretic behaviour, in: 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019, Institute of Electrical and Electronics Engineers Inc., 2019, pp. 1 - 4 (atti di: 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019, fra, 2019) [Contributo in Atti di convegno]

Balestra L.; Reggiani S.; Gnudi A.; Gnani E.; Baccarani G.; Dobrzynska J.; Vobecky J., Numerical investigation of the leakage current and blocking capabilities of high-power diodes with doped dlc passivation layers, in: International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, Institute of Electrical and Electronics Engineers Inc., 2019, 2019-, pp. 1 - 4 (atti di: 24th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019, Palazzo di Toppo Wassermann, ita, 2019) [Contributo in Atti di convegno]

Carapezzi S.; Reggiani S.; Gnani E.; Gnudi A., On the electron mobility of strained InGaAs channel MOSFETs, in: European Solid-State Device Research Conference, Editions Frontieres, «PROCEEDINGS OF THE EUROPEAN SOLID STATE DEVICE RESEARCH CONFERENCE», 2019, 2019-, pp. 266 - 269 (atti di: 49th European Solid-State Device Research Conference, ESSDERC 2019, pol, 2019) [Contributo in Atti di convegno]