Foto del docente

Elena Gnani

Professoressa associata

Dipartimento di Ingegneria dell'Energia Elettrica e dell'Informazione "Guglielmo Marconi"

Settore scientifico disciplinare: ING-INF/01 ELETTRONICA

Direttrice Centro di Ricerca sui Sistemi Elettronici per l'Ingegneria dell'Informazione e delle Telecomunicazioni "Ercole De Castro" — ARCES (Advanced Research Center on Electronic System)

Pubblicazioni

Gnani, Elena; Visciarelli, Michele; Gnudi, Antonio; Reggiani, Susanna; Baccarani, Giorgio, Impact of strain and interface traps on the performance of III-V nanowire TFETs, in: 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 2016, pp. 275 - 278 (atti di: 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016, chn, 2016) [Contributo in Atti di convegno]

Visciarelli, Michele; Gnani, Elena; Gnudi, Antonio; Reggiani, Susanna; Baccarani, Giorgio, Impact of Strain on Tunneling Current and Threshold Voltage in III-V Nanowire TFETs, «IEEE ELECTRON DEVICE LETTERS», 2016, 37, Article number: 7428829, pp. 560 - 563 [articolo]Open Access

Visciarelli, M.; Gnani, E.; Gnudi, A.; Reggiani, S.; Baccarani, G., Optimization of GaSb/InAs TFET exploiting different strain configurations, in: 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2016, Institute of Electrical and Electronics Engineers Inc., 2016, pp. 16 - 19 (atti di: 2nd Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2016, Institute for Microelectronics, TU Wien, aut, 2016) [Contributo in Atti di convegno]

Rau, Martin; Markussen, Troels; Caruso, Enrico; Esseni, David; Gnani, Elena; Gnudi, Antonio; Khomyakov, Petr A.; Luisier, Mathieu; Osgnach, Patrik; Palestri, Pierpaolo; Reggiani, Susanna; Schenk, Andreas; Selmi, Luca; Stokbro, Kurt, Performance study of strained III-V materials for ultra-thin body transistor applications, in: European Solid-State Device Research Conference, Editions Frontieres, «PROCEEDINGS OF THE EUROPEAN SOLID STATE DEVICE RESEARCH CONFERENCE», 2016, 2016-, pp. 184 - 187 (atti di: 46th European Solid-State Device Research Conference, ESSDERC 2016, che, 2016) [Contributo in Atti di convegno]

Di Lecce, Valerio; Gnudi, Antonio; Gnani, Elena; Reggiani, Susanna; Baccarani, Giorgio, Simulation of graphene base transistors with bilayer tunnel oxide barrier: Model calibration and performance projection, «IEEE ELECTRON DEVICE LETTERS», 2016, 37, pp. 1489 - 1492 [articolo]

Gnani, Elena; Baravelli, Emanuele; Maiorano, Pasquale; Gnudi, Antonio; Reggiani, Susanna; Baccarani, Giorgio, Steep-slope devices: Prospects and challenges, «JOURNAL OF NANO RESEARCH», 2016, 39, pp. 3 - 16 [articolo]

Cornigli, Davide; Monti, Federico; Reggiani, Susanna; Gnani, Elena; Gnudi, Antonio; Baccarani, Giorgio, TCAD analysis of the leakage current and breakdown versus temperature of GaN-on-Silicon vertical structures, «SOLID-STATE ELECTRONICS», 2016, 115, pp. 173 - 178 [articolo]

Carapezzi, Stefania; Caruso, Enrico; Gnudi, Antonio; Reggiani, Susanna; Gnani, Elena, TCAD low-field mobility model for InGaAs UTB MOSFETs including quasi-ballistic corrections, in: European Solid-State Device Research Conference, Gif-sur-Yvette, Editions Frontieres, «PROCEEDINGS OF THE EUROPEAN SOLID STATE DEVICE RESEARCH CONFERENCE», 2016, 2016-, pp. 416 - 419 (atti di: 46th European Solid-State Device Research Conference, ESSDERC 2016, Lausanne, SWITZERLAND, SEP 12-15, 2016) [Contributo in Atti di convegno]

Reggiani, Susanna; Giordano, Carlo; Gnudi, Antonio; Gnani, Elena; Baccarani, Giorgio; Dobrzynska, J.; Vobecky, J.; Bellini, Maurizio, TCAD-based investigation on transport properties of Diamond-like carbon coatings for HV-ICs, in: Technical Digest - International Electron Devices Meeting, IEDM, Institute of Electrical and Electronics Engineers Inc., 2016, pp. 36.7.1 - 36.7.4 (atti di: 62nd IEEE International Electron Devices Meeting, IEDM 2016, usa, 2016) [Contributo in Atti di convegno]

Baccarani, Giorgio; Gnani, Elena; Gnudi, Antonio; Reggiani, Susanna, Theoretical analysis and modeling for nanoelectronics, «SOLID-STATE ELECTRONICS», 2016, 125, pp. 2 - 13 [articolo]

Villani, F.; Gnani, E; Gnudi, A.; Reggiani, S.; Baccarani, G., A quasi 2D semianalytical model for the potential profile in hetero and homojunction tunnel FETs, «SOLID-STATE ELECTRONICS», 2015, 113, Article number: 6807, pp. 86 - 91 [articolo]

Betti Beneventi, Giovanni; Reggiani, Susanna; Gnudi, Antonio; Gnani, Elena; Alian, Alireza; Collaert, Nadine; Mocuta, Anda; Thean, Aaron; Baccarani, Giorgio, A TCAD Low-Field Electron Mobility Model for Thin-Body InGaAs on InP MOSFETs Calibrated on Experimental Characteristics, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2015, 62, Article number: 7293162, pp. 3645 - 3652 [articolo]

Betti Beneventi, Giovanni; Reggiani, Susanna; Gnudi, Antonio; Gnani, Elena; Aliane, Alireza; Collaert, Nadine; Mocuta, Anda; Thean, Aaron; Baccarani, Giorgio, Analytical model of thin-body InGaAs-on-InP MOSFET low-field electron mobility for integration in TCAD tools, in: EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Institute of Electrical and Electronics Engineers Inc., 2015, pp. 241 - 244 (atti di: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2015, ita, 2015) [Contributo in Atti di convegno]

Gnani, E.; Baravelli, E.; Gnudi, A.; Reggiani, S.; Baccarani, G., Capacitance estimation for InAs Tunnel FETs by means of full-quantum k.p simulation, «SOLID-STATE ELECTRONICS», 2015, 108, pp. 104 - 109 [articolo]

Reggiani, Susanna; Barone, Gaetano; Gnani, Elena; Gnudi, Antonio; Baccarani, Giorgio; Poli, Stefano; Wise, Rick; Chuang, Ming-Yeh; Tian, Weidong; Pendharkar, Sameer; Denison, Marie, Characterization and modeling of high-voltage LDMOS transistors, in: Hot Carrier Degradation in Semiconductor Devices, Cham, Switzerland, Springer International Publishing, 2015, pp. 309 - 339 [capitolo di libro]