Foto del docente

Elena Gnani

Professoressa associata

Dipartimento di Ingegneria dell'Energia Elettrica e dell'Informazione "Guglielmo Marconi"

Settore scientifico disciplinare: ING-INF/01 ELETTRONICA

Direttrice Centro di Ricerca sui Sistemi Elettronici per l'Ingegneria dell'Informazione e delle Telecomunicazioni "Ercole De Castro" — ARCES (Advanced Research Center on Electronic System)

Pubblicazioni

Di Lecce, Valerio; Gnudi, Antonio; Gnani, Elena; Reggiani, Susanna; Baccarani, Giorgio, Simulations of Graphene Base Transistors with Improved Graphene Interface Model, «IEEE ELECTRON DEVICE LETTERS», 2015, 36, Article number: 7147793, pp. 969 - 971 [articolo]

Baccarani, G.; Baravelli, E.; Gnani, E.; Gnudi, A.; Reggiani, S., Theoretical analyses and modeling for nanoelectronics, in: European Solid-State Device Research Conference, Editions Frontieres, 2015, 2015-, pp. 4 - 9 (atti di: 45th European Solid-State Device Research Conference, ESSDERC 2015, Messe Congress, aut, 2015) [Contributo in Atti di convegno]

Baccarani, G.; Baravelli, E.; Gnani, E.; Gnudi, A.; Reggiani, S., Theoretical analyses and modeling for nanoelectronics, in: European Solid-State Circuits Conference, IEEE Computer Society, 2015, 2015-, pp. 4 - 9 (atti di: 41st European Solid-State Circuits Conference, ESSCIRC 2015, Messe Congress, aut, 2015) [Contributo in Atti di convegno]

Villani, F.; Gnani, E.; Gnudi, A.; Reggiani, S.; Baccarani, G., A quasi 2D semianalytical model for the potential profile in hetero and homojunction tunnel FETs, in: 2014 44th European Solid State Device Research Conference (ESSDERC), Bez, R; Pavan, P; Meneghesso, G;, 2014, pp. 262 - 265 (atti di: 2014 44th European Solid State Device Research Conference (ESSDERC), Venice, Italy, Sept 22-26, 2014) [Contributo in Atti di convegno]

R. Grassi; A. Gnudi; V. Di Lecce; E. Gnani; S. Reggiani; G. Baccarani, Boosting the voltage gain of graphene FETs through a differential amplifier scheme with positive feedback, «SOLID-STATE ELECTRONICS», 2014, 100, pp. 54 - 60 [articolo]

Baravelli, E.; Gnani, E.; Gnudi, A.; Reggiani, S.; Baccarani, G., Capacitance estimation for InAs Tunnel FETs by means of full-quantum k·p simulation, in: 2014 15th International Conference on Ultimate Integration on Silicon (ULIS), 2014, pp. 17 - 20 (atti di: ULIS 2014 - 2014 15th International Conference on Ultimate Integration on Silicon, Stockholm, Sweden, 5-7 April 2014) [Contributo in Atti di convegno]

Susanna Reggiani; Gaetano Barone; Elena Gnani; Antonio Gnudi; Giorgio Baccarani; Stefano Poli; Rick Wise; Ming-Yeh Chuang; Weidong Tian; Sameer Pendharkar; Marie Denison, Characterization and modeling of electrical stress degradation in STI-based integrated power devices, «SOLID-STATE ELECTRONICS», 2014, 102, pp. 25 - 41 [articolo]

Pasquale, Maiorano; Elena, Gnani; Antonio, Gnudi; Susanna, Reggiani; Giorgio, Baccarani, Design and optimization of impurity- and electrostatically-doped superlattice FETs to meet all the ITRS power targets at VDD=0.4V, «SOLID-STATE ELECTRONICS», 2014, 101, pp. 70 - 78 [articolo]

Giovanni Betti Beneventi; Elena Gnani; Antonio Gnudi; Susanna Reggiani; Giorgio Baccarani, Dual-Metal-Gate InAs Tunnel FET With Enhanced Turn-On Steepness and High On-Current, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2014, 61, pp. 776 - 784 [articolo]

Ding, Lili; Gnani, Elena; Gerardin, Simone; Bagatin, Marta; Royer, Cyrille Le; Paccagnella, Alessandro, Effects of bias on the radiation responses of Si-based TFETs, in: Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014, Institute of Electrical and Electronics Engineers Inc., 2014, pp. 1 - 3 (atti di: 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014, chn, 2014) [Contributo in Atti di convegno]

Roberto, Grassi; Antonio, Gnudi; Valerio Di, Lecce; Elena, Gnani; Susanna, Reggiani; Giorgio, Baccarani, Exploiting Negative Differential Resistance in Monolayer Graphene FETs for High Voltage Gains, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2014, 61, pp. 617 - 624 [articolo]

Valerio, Di Lecce; Roberto, Grassi; Antonio, Gnudi; Elena, Gnani; Susanna, Reggiani; Giorgio, Baccarani, Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation, in: 2014 44th European Solid State Device Research Conference (ESSDERC), Bez, R; Pavan, P; Meneghesso, G;, 2014, pp. 313 - 316 (atti di: 2014 44th European Solid State Device Research Conference (ESSDERC), Venice, Italy, Sept 22-26, 2014) [Contributo in Atti di convegno]

Maiorano, P.; Gnani, E.; Grassi, R.; Gnudi, A.; Reggiani, S.; Baccarani, G., Investigation on the electrical properties of superlattice FETs using a non-parabolic band model, «SOLID-STATE ELECTRONICS», 2014, 98, pp. 45 - 49 [articolo]

S. Reggiani; F. Monti; G. Barone; E. Gnani; A. Gnudi; G. Baccarani; S. Poli; M.-Y. Chuang; W. Tian; R. Wise, Linear drain current degradation of STI-based LDMOS transistors under AC stress conditions, in: Proceedings of the International Symposium on Power Semiconductor Devices and ICs, 2014, pp. 193 - 196 (atti di: 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD), Waikoloa, Hawaii (USA), June 15-19, 2014) [Contributo in Atti di convegno]

Emanuele, Baravelli; Elena, Gnani; Roberto, Grassi; Antonio, Gnudi; Susanna, Reggiani; Giorgio, Baccarani, Optimization of n-and p-type TFETs integrated on the same InAs/Al xGa1-xSb technology platform, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2014, 61, pp. 178 - 185 [articolo]