Imperiale, I.; Reggiani, S.; Gnani, E.; Gnudi, A.; Baccarani, G.; Nguyen, L.; Denison, M., TCAD modeling of encapsulation layer in high-voltage, high-temperature operation regime, in: Proceedings of the 2014 44th European Solid State Device Research Conference (ESSDERC 2014), 2014, pp. 325 - 328 (atti di: 44th European Solid State Device Research Conference (ESSDERC), Venice, Italy, Sept 22-26, 2014) [Contributo in Atti di convegno]
Emanuele, Baravelli; Elena, Gnani; Antonio, Gnudi; Susanna, Reggiani; Giorgio, Baccarani, TFET Inverters With n-/p-Devices on the Same Technology Platform for Low-Voltage/Low-Power Applications, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2014, 61, pp. 473 - 478 [articolo]
Ding, Lili; Gnani, Elena; Gerardin, Simone; Bagatin, Marta; Driussi, Francesco; Palestri, Pierpaolo; Selmi, Luca; Royer, Cyrille Le; Paccagnella, Alessandro, Total ionizing dose effects in si-based tunnel FETs, «IEEE TRANSACTIONS ON NUCLEAR SCIENCE», 2014, 61, Article number: 6966809, pp. 2874 - 2880 [articolo]
BETTI BENEVENTI, Giovanni; Gnani, Elena; Gnudi, Antonio; Reggiani, Susanna; Baccarani, Giorgio, Boosting InAs TFET on-current above 1 mA/um with no leakage penalty, in: 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC), IEEE Computer Society, 2013, pp. 73 - 76 (atti di: European Solid-State Device Research Conference (ESSDERC), Bucharest, 16-20 Sept. 2013) [Contributo in Atti di convegno]
Giovanni Betti Beneventi;Elena Gnani;Antonio Gnudi;Susanna Reggiani;Giorgio Baccarani, Can Interface Traps Suppress TFET Ambipolarity?, «IEEE ELECTRON DEVICE LETTERS», 2013, 34, pp. 1557 - 1559 [articolo]
E. Baravelli;E. Gnani;R. Grassi;A. Gnudi;S. Reggiani;G. Baccarani, Complementary n- and p-type TFETs on the same InAs/Al(0.05)Ga(0.95)Sb platform, in: 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC), IEEE Computer Society, 2013, pp. 69 - 72 (atti di: European Solid-State Device Research Conference (ESSDERC), Bucharest, 16-20 Sept. 2013) [Contributo in Atti di convegno]
DI LECCE, Valerio; Grassi, Roberto; Gnudi, Antonio; Gnani, Elena; Reggiani, Susanna; Baccarani, Giorgio, DC and small-signal numerical simulation of graphene base transistor for terahertz operation, in: 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC), IEEE Computer Society, 2013, pp. 314 - 317 (atti di: European Solid-State Device Research Conference (ESSDERC), Bucharest, 16-20 Sept. 2013) [Contributo in Atti di convegno]
E. Gnani; A. Gnudi; S. Reggiani; G. Baccarani, Deterministic solution of the 1D Boltzmann transport equation: Application to the study of current transport in nanowire FETs, «MICROELECTRONICS JOURNAL», 2013, 44, pp. 20 - 25 [articolo]
E. Gnani;A. Gnudi;S. Reggiani;G. Baccarani, Drain-conductance optimization in nanowire TFETs by means of a physics-based analytical model, «SOLID-STATE ELECTRONICS», 2013, 84, pp. 96 - 102 [articolo]
E. Baravelli; E. Gnani; A. Gnudi; S. Reggiani; G. Baccarani, Full-quantum simulation of heterojunction TFET inverters providing better performance than multi-gate CMOS at sub-0.35V VDD, in: 2013 Third Berkeley Symposium on Energy Efficient Electronic Systems (E3S), 2013, pp. 1 - 2 (atti di: 2013 3rd Berkeley Symposium on Energy Efficient Electronic Systems, Berkeley, CA, 28-29 October, 2013) [atti di convegno-abstract]
Maiorano, Pasquale; Gnani, Elena; Gnudi, Antonio; Reggiani, Susanna; Baccarani, Giorgio, Gate stack optimization to minimize power consumption in super-lattice FETs, in: 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC), IEEE Computer Society, 2013, pp. 81 - 84 (atti di: European Solid-State Device Research Conference (ESSDERC), Bucharest, 16-20 Sept. 2013) [Contributo in Atti di convegno]
Valerio Di Lecce;Roberto Grassi;Antonio Gnudi;Elena Gnani;Susanna Reggiani;Giorgio Baccarani, Graphene Base Transistors: A Simulation Study of DC and Small-Signal Operation, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2013, 60, pp. 3584 - 3591 [articolo]
Valerio Di Lecce;Roberto Grassi;Antonio Gnudi;Elena Gnani;Susanna Reggiani;Giorgio Baccarani, Graphene-Base Heterojunction Transistor: An Attractive Device for Terahertz Operation, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2013, 60, pp. 4263 - 4268 [articolo]
R. Grassi;A. Gnudi;I. Imperiale;E. Gnani;S. Reggiani;G. Baccarani, Mode space approach for tight-binding transport simulations in graphene nanoribbon field-effect transistors including phonon scattering, «JOURNAL OF APPLIED PHYSICS», 2013, 113, pp. 144506-1 - 144506-9 [articolo]
Reggiani, Susanna; Gnani, Elena; Gnudi, Antonio; Baccarani, Giorgio; Poli, Stefano; Wise, R.; Chuang, M. Y.; Tian, W.; Denison, M., Modeling and characterization of hot-carrier stress degradation in power MOSFETs, in: 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC), IEEE Computer Society, 2013, pp. 91 - 94 (atti di: European Solid-State Device Research Conference (ESSDERC), Bucharest, 16-20 Sept. 2013) [Contributo in Atti di convegno]
