Giuliano, F.; Reggiani, S.; Gnani, E.; Gnudi, A.; Rossetti, M.; Depetro, R.; Croce, G., Characterization and numerical analysis of breakdown in thick amorphous SiO2 capacitors, «SOLID-STATE ELECTRONICS», 2022, 192, Article number: 108256, pp. 1 - 7 [articolo]Open Access
Balestra L.; Gnani E.; Reggiani S., Electron effective masses of Scx Al1- x N and Alx Ga1- x N from first-principles calculations of unfolded band structure, «JOURNAL OF APPLIED PHYSICS», 2022, 132, Article number: 215108, pp. 1 - 6 [articolo]Open Access
Balestra L.; Reggiani S.; Gnani E.; Gnudi A., Group velocity of electrons in 4H-SiC from Density Functional Theory simulations, «SOLID-STATE ELECTRONICS», 2022, 194, Article number: 108338, pp. 1 - 4 [articolo]Open Access
Balestra, L.; Reggiani, S.; Gnudi, A.; Gnani, E.; Dobrzynska, J.; Vobecky, J., On the breakdown voltage temperature dependence of high-voltage power diodes passivated with diamond-like carbon, «SOLID-STATE ELECTRONICS», 2022, 193, Article number: 108284, pp. 1 - 7 [articolo]Open Access
Zunarelli L.; Reggiani S.; Gnani E.; Sankaralingam R.; Dissegna M.; Boselli G., TCAD Investigation of Power-to-Failure Evaluation for Ultrafast Events in BJT-based ESD Protection Cells, in: IEEE International Reliability Physics Symposium Proceedings, Institute of Electrical and Electronics Engineers Inc., «IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS», 2022, 2022-, pp. 6C2-1 - 6C2-6 (atti di: 2022 IEEE International Reliability Physics Symposium, IRPS 2022, usa, 2022) [Contributo in Atti di convegno]
Giuliano F.; Reggiani S.; Gnani E.; Gnudi A.; Rossetti M.; Depetro R., Thickness-dependent dielectric breakdown in thick amorphous SiO2 capacitors, «SOLID-STATE ELECTRONICS», 2022, 194, Article number: 108363, pp. 1 - 5 [articolo]Open Access
Giuliano F.; Reggiani S.; Gnani E.; Gnudi A.; Rossetti M.; Depetro R.; Croce G., Constant-current time dependent dielectric breakdown in thick amorphous SiO2 capacitors, in: 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EuroSOI-ULIS 2021, Institute of Electrical and Electronics Engineers Inc., 2021, pp. 1 - 4 (atti di: 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EuroSOI-ULIS 2021, Caen, Francia, 1-3/09/2021) [Contributo in Atti di convegno]
Luigi Balestra; Susanna Reggiani; Antonio Gnudi; Elena Gnani; Jan Vobeck{'{y}}; Umamaheswara Vemulapati, Current Instabilities in Large-Area Silicon Diodes: An Accurate TCAD Approach, in: ISPS' 21 Proceedings, 2021, pp. 49 - 53 (atti di: 15th INTERNATIONAL SEMINAR ON POWER SEMICONDUCTORS, Prague, Czech Republic, 26 August - 27 August 2021) [Contributo in Atti di convegno]
Jungemann, C.; Bonani, F.; Cea, S. M.; Gnani, E.; Hong, S. -M.; Jin, S.; Liu, X.; Moroz, V.; Verhulst, A., Foreword Special Issue on 'New Simulation Methodologies for Next-Generation TCAD Tools', «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2021, 68, pp. 5346 - 5349 [articolo]
Balestra L.; Reggiani S.; Gnudi A.; Gnani E.; Dobrzynska J.; Vobecky J., Influence of the DLC Passivation Conductivity on the Performance of Silicon High-Power Diodes over an Extended Temperature Range, «IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY», 2021, 9, Article number: 9404302, pp. 431 - 440 [articolo]Open Access
Caruso E.; Esseni D.; Gnani E.; Lizzit D.; Palestri P.; Pin A.; Puglisi F.M.; Selmi L.; Zagni N., Modeling nanoscale iii–v channel mosfets with the self-consistent multi-valley/multi-subband monte carlo approach, «ELECTRONICS», 2021, 10, Article number: 2472, pp. 1 - 16 [articolo]Open Access
Giuliano F.; Reggiani S.; Gnani E.; Gnudi A.; Rossetti M.; Depetro R.; Croce G., Novel TCAD Approach for the Investigation of Charge Transport in Thick Amorphous SiO2 Insulators, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2021, 68, Article number: 9507338, pp. 5438 - 5447 [articolo]Open Access
Balestra, Luigi; Reggiani, Susanna; Gnudi, Antonio; Gnani, Elena; Dobrzynska, Jagoda; Vobecky, Jan, On the Breakdown Voltage Temperature Dependence of High-Voltage Power Diode Passivated with Diamond-Like Carbon, in: 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS), 2021, pp. 1 - 4 (atti di: 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS), Caen, France, 1-3 Sept. 2021) [Contributo in Atti di convegno]
Reggiani, Susanna; Balestra, Luigi; Gnudi, Antonio; Gnani, Elena; Baccarani, Giorgio; Dobrzynska, Jagoda; Vobecky, Jan; Tosi, Carlo, TCAD Investigation of Differently-Doped DLC Passivation for Large-Area High-Power Diodes, «IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS», 2021, 9, Article number: 8801920, pp. 2155 - 2162 [articolo]
Carapezzi S.; Reggiani S.; Gnani E.; Gnudi A., Electron mobility of strained InGaAs long-channel MOSFETs: From scattering rates to TCAD model, «SOLID-STATE ELECTRONICS», 2020, 172, Article number: 107902, pp. 1 - 7 [articolo]
