Foto del docente

Elena Gnani

Professoressa associata

Dipartimento di Ingegneria dell'Energia Elettrica e dell'Informazione "Guglielmo Marconi"

Settore scientifico disciplinare: ING-INF/01 ELETTRONICA

Direttrice Centro di Ricerca sui Sistemi Elettronici per l'Ingegneria dell'Informazione e delle Telecomunicazioni "Ercole De Castro" — ARCES (Advanced Research Center on Electronic System)

Pubblicazioni

Gnani E.; Visciarelli M.; Gnudi A.; Reggiani S.; Baccarani G., TFET inverter static and transient performances in presence of traps and localized strain, «SOLID-STATE ELECTRONICS», 2019, 159, pp. 38 - 42 [articolo]

Cornigli, Davide*; Reggiani, Susanna; Gnudi, Antonio; Gnani, Elena; Baccarani, Giorgio; Fabiani, Davide; Varghese, Dhanoop; Tuncer, Enis; Krishnan, Srikanth; Nguyen, Luu, Characterization of dielectric properties and conductivity in encapsulation materials with high insulating filler contents, «IEEE TRANSACTIONS ON DIELECTRICS AND ELECTRICAL INSULATION», 2018, 25, Article number: 8561350, pp. 2421 - 2428 [articolo]Open Access

Cornigli, D.*; Reggiani, S.; Gnudi, A.; Gnani, E.; Baccarani, G.; Fabiani, D.; Varghese, D.; Tuncer, E.; Krishnan, S.; Nguyen, L., Electrical characterization of epoxy-based molding compounds for next generation HV ICs in presence of moisture, «MICROELECTRONICS RELIABILITY», 2018, 88-90, pp. 752 - 755 [articolo]Open Access

Reggiani, S.; Balestra, L.; Gnudi, A.*; Gnani, E.; Baccarani, G.; Dobrzynska, J.; Vobecký, J.; Tosi, C., TCAD study of DLC coatings for large-area high-power diodes, «MICROELECTRONICS RELIABILITY», 2018, 88-90, pp. 1094 - 1097 [articolo]

Gnani, E.; Gnudi, A.; Reggiani, S.; Baccarani, G.; Visciarelli, M., TFET-based inverter performance in the presence of traps and localized strain, in: 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018, Institute of Electrical and Electronics Engineers Inc., 2018, 2018-, pp. 1 - 4 (atti di: 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018, esp, 2018) [Contributo in Atti di convegno]

Stefania Carapezzi; Sebastian Eberle; Susanna Reggiani; Elena Gnani; Cosmin Roman; Christofer Hierold; Antonio Gnudi, 3D TCAD modeling of NO2CNT FET sensors, in: 48th European Solid-State Device Research Conference (ESSDERC) : Dresden, 3-6 september 2018, Piscataway ; Red Hook ; Gif-sur-Yvette, Institute of Electrical and Electronics Engineers ( IEEE ) ; Curran Associates, «PROCEEDINGS OF THE EUROPEAN SOLID STATE DEVICE RESEARCH CONFERENCE», 2018, CFP18543-POD, pp. 222 - 225 (atti di: 48th European Solid-State Device Research Conference, ESSDERC 2018, Dresden, 3 - 6 Settembre 2018) [Contributo in Atti di convegno]Open Access

Visciarelli, Michele; Gnani, Elena; Gnudi, Antonio; Reggiani, Susanna; Baccarani, Giorgio, Design guidelines for GaSb/InAs TFET exploiting strain and device size, «SOLID-STATE ELECTRONICS», 2017, 129, pp. 157 - 162 [articolo]

Visciarelli, Michele; Gnani, Elena; Gnudi, Antonio; Reggiani, Susanna; Baccarani, Giorgio, Impact of Traps and Strain on Optimized n- and p-Type TFETs Integrated on the Same InAs/AlGaSb Technology Platform, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2017, 64, Article number: 7947114, pp. 3108 - 3113 [articolo]

Visciarelli, Michele; Gnani, Elena; Gnudi, Antonio; Reggiani, Susanna; Baccarani, Giorgio, Investigation of the combined effect of traps and strain on optimized n- and p-type TFETs, in: Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 2017, pp. 13 - 16 (atti di: 2017 Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017, grc, 2017) [Contributo in Atti di convegno]

Selmi, L.; Caruso, E.; Carapezzi, S.; Visciarelli, M.; Gnani, E.; Zagni, N.; Pavan, P.; Palestri, P.; Esseni, D.; Gnudi, A.; Reggiani, S.; Puglisi, F.M.; Verzellesi, G., Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD, in: Technical Digest - International Electron Devices Meeting, IEDM, Institute of Electrical and Electronics Engineers Inc., «TECHNICAL DIGEST - INTERNATIONAL ELECTRON DEVICES MEETING», 2017, pp. 13.4.1 - 13.4.4 (atti di: 63rd IEEE International Electron Devices Meeting, IEDM 2017, USA, 2017) [Contributo in Atti di convegno]

Imperiale, Ilaria; Reggiani, Susanna; Pavarese, Giuseppe; Gnani, Elena; Gnudi, Antonio; Baccarani, Giorgio; Ahn, Woojin; Alam, Muhammad A.; Varghese, Dhanoop; Hernandez-Luna, Alejandro; Nguyen, Luu; Krishnan, Srikanth, Role of the insulating fillers in the encapsulation material on the lateral charge spreading in HV-ICs, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2017, 64, Article number: 7820058, pp. 1209 - 1216 [articolo]

Carapezzi, Stefania; Caruso, Enrico; Gnudi, Antonio; Palestri, Pierpaolo; Reggiani, Susanna; Gnani, Elena, TCAD Mobility Model of III-V Short-Channel Double-Gate FETs Including Ballistic Corrections, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2017, 64, Article number: 8070999, pp. 4882 - 4888 [articolo]

Visciarelli, Michele; Gnudi, Antonio; Gnani, Elena; Reggiani, Susanna, A full-quantum simulation study of InGaAs NW MOSFETs including interface traps, in: European Solid-State Device Research Conference, Editions Frontieres, «PROCEEDINGS OF THE EUROPEAN SOLID STATE DEVICE RESEARCH CONFERENCE», 2016, 2016-, pp. 180 - 183 (atti di: 46th European Solid-State Device Research Conference, ESSDERC 2016, che, 2016) [Contributo in Atti di convegno]

Zerveas, George; Caruso, Enrico; Baccarani, Giorgio; Czornomaz, Lukas; Daix, Nicolas; Esseni, David; Gnani, Elena; Gnudi, Antonio; Grassi, Roberto; Luisier, Mathieu; Markussen, Troels; Osgnach, Patrik; Palestri, Pierpaolo; Schenk, Andreas; Selmi, Luca; Sousa, Marilyne; Stokbro, Kurt; Visciarelli, Michele, Comprehensive comparison and experimental validation of band-structure calculation methods in III-V semiconductor quantum wells, «SOLID-STATE ELECTRONICS», 2016, 115, Article number: S0038110115002580, pp. 92 - 102 [articolo]Open Access

Ding, Lili; Gnani, Elena; Gerardin, Simone; Bagatin, Marta; Driussi, Francesco; Selmi, Luca; Royer, Cyrille Le; Paccagnella, Alessandro, Impact of bias conditions on electrical stress and ionizing radiation effects in Si-based TFETs, «SOLID-STATE ELECTRONICS», 2016, 115, pp. 146 - 151 [articolo]