Keywords:
Beyond-CMOS devices
Semiconductor device modeling
Nanoelectronics
Her scientific activity has been devoted to the physics and
modeling and the characterization of beyond-CMOS devices and non
volatile memories. In particular, she contributed to the
development of physical models for carrier transport in
semiconductors and to the study of new numerical-analysis
techniques, with special emphasis on the study of quantum-confined
devices, such as silicon nanowires (NW), carbon nanotubes (CNT) and
graphene nanoribbons (GNR), which represent possible
candidates for future generations of the nanoelectronic
technology.
She has developed new simulation tools for the analysis of quantum
mechanical effects not just for quantization effects due to the
electron structural, or field-related, lateral confinement ,
but also for quantum transport effects which must be taken into
account for devices with gate lengths of few nanometers,
namely band-to-band tunnelling and quasi-ballistic transport,
which are commonly neglected by the semi-classical
approximation. Moreover, EG devised a new physical model for
the investigation of the electronic properties variation related to
non-parabolicity effects of the energy dispersion relationship
E(k), which take place for nanowire devices with a cross section of
few nanometers.
She is currently the principal investigator in the research
projects “Futuro in Ricerca” (FIRB) Novel device and circuit
concepts for energy-efficient electronics funded by the Italian
Ministry of University. The objective of this project is to study
device architectures able to outperform the ITRS predictions in
terms of off- and on-current, with the aim of reducing the voltage
operation of advanced nanoelectronic circuits into sub-0.5V and
their stand-by power consumption by one order of magnitude.