Elena Gnani

Associate Professor at the University of Bologna since 2014, she contributed to the development of physical transport models in semiconductor devices and numerical-analysis techniques, with special emphasis on the study of quantum-confined devices, such as FinFETs, silicon nanowires (NW), as well as steep-slope devices. Currently her research focused on new device concepts able to reduce the power consumption of integrated circuits. She participated in several European and National research projects, in cooperation with worldwide semiconductor research centers and semiconductor industries. She is author of more than 180 paper published in referred international journals and in proceedings of major international conferences, and of several invited contributions.