Gnani E.; Reggiani S.; Rudan M., Density of states and group velocity of electrons in SiO2 calculated from a full band structure, «PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS», 2002, 66, Article number: 195205 , pp. 195205-1 - 195205-10 [Scientific article]
Gnani E.; Reggiani S.; Rudan M.; Baccarani G., Extraction method for the impact-ionization multiplication factor in silicon at large operating temperatures, in: European Solid-State Device Research Conference, IEEE Computer Society, 2002, pp. 227 - 230 (atti di: 32nd European Solid-State Device Research Conference, ESSDERC 2002, ita, 2002) [Contribution to conference proceedings]
Gnani E.; Reggiani S.; Rudan M., Full-band transport properties of silicon dioxide using the spherical-harmonics expansion of the BTE, «PHYSICA. B, CONDENSED MATTER», 2002, 314, pp. 193 - 197 [Scientific article]
Gnani E.; Reggiani S.; Colle R.; Rudan M., Calculation of transport parameters of SiO2 polymorphs, «VLSI DESIGN», 2001, 13, pp. 311 - 315 [Scientific article]
Gnani E.; Reggiani S.; Colle R.; Rudan M., Band-structure calculations of SiC>2 by means of hartree-fock and density-functional techniques, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2000, 47, pp. 1795 - 1803 [Scientific article]
