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Beatrice Fraboni

Full Professor

Department of Physics and Astronomy "Augusto Righi"

Academic discipline: FIS/03 Physics of Matter

Head of Collegio Superiore

Publications

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Publications prior to 2004

1)       G. Ciatto, F.D'Acapito, B.Fraboni, F.Boscherini, N.El Habra, T.Cesca, A.Gasparotto, E.Moreira, F.Priolo “Local structure of iron implanted in Indium Posphide” Nucl.Instrum.Methods B  200, 100 (2003)

2)       A.Cavallini, B.Fraboni, W.Dusi e M.Zanarini “Defective states induced in CdZnTe and CdTe detectors by high and low energy neutrons” J.Appl.Phys. 94 3135 (2003)

3)       A .Gasparotto, T.Cesca, B.Fraboni, F.Priolo “Correlation among structural, electrical and deep level properties of Fe centers implanted in InP” Physica B 340-342, 403 (2003)

4)       T.Cesca V. Rampazzo, G. Mattei, A. Gasparotto, B. Fraboni, F. Boscherini, F .Priolo, G.Ciatto, C.Bocchi “Atomic Environment of Fe in high temperature implanted InP” Phys.Rev. B 68 224113 (2003)

5)       A.Cavallini, B.Fraboni, W.Dusi, N.Auricchio, M.Zanarini, P.Siffert “Behaviour of CdTe and CdZnTe detectors following electron irradiation” IEEE Trans. Nucl.Science 49, 1598 (2002)

6)       A.Cavallini, B.Fraboni, W.Dusi, N.Auricchio, P.Chirco, M.Zanarini, P.Siffert, P.Fougeres “Radiation effects on II-VI compound based detectors” Nucl.Instru m.Methods A 476 770 (2002)

7)       A.Cavallini, B.Fraboni, W.Dusi, N.Auricchio, M.Zanarini, P.Chirco “The time recovery of spectroscopic properties of CdZnTe and CdTe heavily irradiated detectors” Appl.Phys.A 75, 427 (2002)

8)       A.Gasparotto, T.Cesca, N.El Habra, B.Fraboni, F.Boscherini, F.Priolo, E.C.Moreira, G.Ciatto, F.D'Acapito, G.Scamarcio “Implant and characterization of highly concentrated Fe deep centers in InP” Mat.Sci.Eng.B 91-92C 503 (2002)

9)       A.Gasparotto, B.Fraboni, F.Priolo, F.Enrichi, A.Mazzone, G.Scamarcio, M.Troccoli, R.Mosca “Assessment of electrical and optical properties of heavily Fe-implanted InP” Mat.Sci.Eng.B 80 202 (2001)

10)   B.Fraboni, A.Gasparotto, T.Cesca, F.Priolo, G.Scamarcio, A.Mazzone, M.Troccoli “High Fe solubility in InP by high temperature ion implantation” Nucl.Instr.Meth.B 178 275 (2001)

11)   A.Mazzo ne, M.Troccoli, G.Scamarcio, B.Fraboni, F.Priolo, A.Gasparotto “Mid-ir (3.5µm) electroluminescence from heavily Fe2+ ion implanted semi-insulating InP” Optical Materials 17 189 (2001)

12)   M.Troccoli, G.Scamarcio, B.Fraboni, F.Priolo, A.Gasparotto “Deep level electroluminescence at 3.5µm from semi-insulating InP layers ion implanted with Fe” Semicon.Sci.Technol. 16 L1 (2001)

13)    A.Cavallini, B.Fraboni, N.Auricchio, E.Caroli, W.Dusi, P.Chirco, M.P.Morigi, M.Zanarini, M.Hage-Ali, P.Siffert “Irradiation induced defects in CdTe and CdZnTe detectors” Nucl.Instr.Meth. A 458 392 (2001)

14)   A.Cavallini, B.Fraboni, W.Dusi, M.Zanarini, M.Hage-Ali, P.Siffert “Defects introduced in cadmium telluride by gamma-irradiation” J.Appl.Phys. 89 55 (2001)

15)   B.Fraboni, A.Gasparotto, F.Priolo, G.Scamarcio “High Fe2+/3+ trap concentration in heavily compensated implanted InP” Appl.Phys.A  73 35 (2001)

16)   A.Castaldini, A.Cavallini, B.Fraboni, S.Pizzini “On the role of extended defects on the transport properties of Er-doped silicon”  Phil.Mag.B 80 571 (2000)

17)   A.Cavallini, B.Fraboni, P.Chirco, M.P.Morigi, M.Zanarini, W.Dusi, N.Auricchio, E.Caroli. P.Fougeres, M.Hage-Ali, P.Siffert “Electronic properties of traps induced by gamma-irradiation in CdTe and CdZnTe detectors” Nucl.Instr.Meth. A 448 558 (2000)

18)   A.Castaldini, A.Cavallini, B.Fraboni, S.Pizzini “Charge collection mapping of the back-transfer process in Er-doped silicon” Appl.Phys.Lett. 76 3585 (2000)

19)   A.Cavallini, B.Fraboni, W.Dusi, M.Zanarini, P.Siffert “Deep levels and compensation in  gamma-irradiated CdZnTe” Appl.Phys.Lett. 77, 3212 (2000)

20)   P.Chirco, E.Caroli, A.Cavallini, W.Dusi, B.Fraboni, M.Hage-Ali, M.P.Morigi, P.Siffert, M.Zanarini “CdTe detectors' response to irradiation with high-energy gamma-rays” IEEE Trans.Nucl.Sci. 47 2078 (2000)

21)   A.Cavallini, B.Fraboni, S.Pizzini, S.Binetti, S.Sanguinetti, L.Lazzarini, G.Salviati “Electrical and optical characterization of Er-doped silicon grown by liquid phase epitaxy” J.Appl.Phys. 85 1582 (1999)

22)   A.Gasparotto, A.Carnera, C. Frigeri, F.Priolo, B.Fraboni, A.Camporese, G.Rossetto “Interaction between Fe, dopants and secondary defects in MeV Fe ion  implanted InP” J.Appl.Phys. 85 753 (1999)

23)   A.Cavallini, B.Fraboni, S.Binetti, S.Pizzini, L.Lazzarini, G.Salviati "Electrical and optical analyses of Er-doped silicon grown by Liquid Phase Epitaxy", Journal of Luminescence 80 347 (1999)

24)   S.Binetti, A.Cavallini, A.Dellafiore, B.Fraboni, E.Grilli, M.Guzzi, S.Pizzini, S.Sanguinetti "Erbium doped epilayers grown by LPE", Journal of Luminescence 80 343 (1999)

25)   A.Cavallini, B.Fraboni, S.Binetti, S.Pizzini, L.Lazzarini, G.Salviati "On the influence of dislocations on the luminescence of Si:Er" phys.stat.sol.(a) 171 347 (1999)

26)   C.Frigeri, A.Carnera,A.Gasparotto, B.Fraboni, F.Priolo, A.Camporese, G.Rossetto “Gettering of Fe at the end of range loops and twin band interfaces in Fe-implanted InP” phys.stat.sol.(a) 171 209 (1999)

27)   A.Gasparotto, A.Carnera, A.Paccagnella, B.Fraboni, F.Priolo, E.Gombia, R.Mosca, G.Rossetto “Semi-insulating behaviour of Fe MeV implanted n-type InP”  in Nucl.Instr.Meth.B 148 411 (1999)

28)   S.Binetti, S.Pizzini, A.Cavallini, B.Fraboni “Erbium doped silicon epilayers grown by liquid phase epitaxy” Semiconductors 33 596 (1999)

29)   A.Gasparotto, A.Carnera, A.Paccagnella, B.Fraboni, F.Priolo, E.Gombia, R.Mosca  “High resistance buried layers by MeV Fe implantation in n-type InP” Appl.Phys.Lett. 75 668 (1999)

30)   A.Castaldini, A.Cavallini, B.Fraboni, P.Fernandez, J.Piqueras, "Deep energy levels in CdTe and CdZnTe" J.Appl.Phys. 83 2121 (1998)

31)   A.Cavallini, B.Fraboni and S.Pizzini, "Deep levels in Er doped silicon", Appl.Phys.Lett. 72  468 (1998)

32)   C.Frigeri, A.Carnera, B.Fraboni, A.Gasparotto,A.Cassa, F.Priolo, A.Camporese, G.Rossetto "Defect characterization in InP substrates implanted with 2MeV Fe ions", Mat.Sci.Eng.B44 193 (1997)

33)   S.Pizzini, M.Donghi, S.Binetti, I.Gelmi, A.Cavallini, B.Fraboni and G.Wagner: "Influence of the host composition on the equilibrium structure of Er-centres in silicon", Solid St.Phenom. 54 86 (1997)

34)   S.Binetti, M.Donghi, S.Pizzini, A.Castaldini, A.Cavallini, B.Fraboni, N.Sobolev "Erbium in Silicon:problems and challenges",  Solid St.Phenom. 57-58 197 (1997)

35)   A.Castaldini, A.Cavallini, B.Fraboni, P.Fernandez, J.Piqueras and L.Polenta "Cathodoluminescence and photo-induced current spectroscopy studies of defects in Cd0.8Zn0.2Te", Phys.Rev.B 54 1122 (1996)

36)    A.Castaldini, A.Cavallini, B.Fraboni, J.Piqueras and L.Polenta "Comparison of electrical and luminescence data for A-center in CdTe" Appl.Phys.Lett. 69 3510 (1996)

37)   A.Castaldini, A.Cavallini, B.Fraboni, P.Fernandez, J.Piqueras and L.Polenta "Compensation and deep levels in II-VI compounds"  Mat.Sci.Eng.B42 302 (1996)

38)   A.Castaldini, A.Cavallini, B.Fraboni, P.Fernandez, J.Piqueras, "Midgap traps related to compensation processes in CdTe alloys" Phys.Rev.B 56 14897 (1997)

39)   A.Castaldini, A.Cavallini, B.Fraboni, B.Mendez and J.Piqueras: "Shallow donor and deep level density: influence on the diffusion length in GaAs:Te wafers", Il Vuoto, Scienza e Tecnologia, 3 176 (1995)

40)   A.Castaldini, A.Cavallini, B.Fraboni and J.Piqueras "The EL2 trap in highly doped GaAs:Te", J.Appl.Phys. 78 1089 (1995)

41)   B.Mendez, J.Piqueras, A.Cavallini and B.Fraboni: "Study of defects in implanted GaAs:Te by cathodoluminescence"   Mat. Sci. Eng. B24 138 (1994)

42)   A.Castaldini, A.Cavallini, B.Fraboni, B.Mendez, and J.Piqueras: "Spatial distribution of recombination centres in GaAs:Te. Effects of the doping level" J.Appl.Phys. 76 987 (1994)

43)   D.Cavalcoli, A.Cavallini and B.Fraboni: "The injection dose effect on the evaluation of bulk and surface  parameters in semiconductors" Phil.Mag. B 70 1095 (1994)

44)   A.Castaldini, A.Cavallini, B.Fraboni and J. Piqueras: "Junction spectroscopy of highly doped GaAs : detection of the EL2 trap"  Mat. Sci. Eng. B25 960 (1994)

45)   A.Castaldini, A.Cavallini, B.Fraboni and E.Giannotte: "Effects of diffusion-induced defects on carrier lifetime",  Appl.Surf.Sci. 63, p.301 (1993)

46)   S.Blythe, B.Fraboni, S.Lall, H.Ahmed and U. De Riu: "Layout reconstruction of complex silicon  chips",  IEEE Solid State Circuits  28, p.138 (1993)

47)   A.Cavallini, B.Fraboni and D.Cavalcoli: "Evaluation of diffusion length and surface recombination velocity in semiconductor devices by the method of moments", J.Appl.Phys. 71, p.5964, (1992).

48)   A.Castaldini, A.Cavallini, B.Fraboni and E.Giannotte: "Role of impurities on diffusion-induced defective states",  J. Appl. Phys. 72, p.1622 (1992)

PROCEEDINGS

1)            P. Cosseddu, J.-O. Vogel, B. Fraboni, J. P. Rabe, N. Koch, A. Bonfiglio “Continuous tuning of organic transistor operation from enhancement to depletion mode by means of organic bulk heterojunctions” Mat.Res.Soc.Symp. Proc fall 2008

2)            B. Fraboni, R. DiPietro, A.Castaldini, A. Cavallini, A. Fraleoni Morgera, L. Setti, I. Mencarelli, C. Femoni “Anisotropic charge transport in organic single crystals based on dipolar molecules” Mat.Res.Soc.Symp. Proc. 1091, 66 ( 2008)

3)            E. Orgiu, M.Taki, B. Fraboni, S. Locci, A.Bonfiglio Looking into the Organic Semiconductor/Organic Dielectric Interface in Pentacene Thin film Transistors: Trapping Mechanisms Characterization and Correlation with Transistor Performances” Mat.Res.Soc.Symp. Proc. 1029, 203 (2008)

4)            T. Cesca, A. Gasparotto, G. Mattei, A. Verna, B. Fraboni, G. Impellizzeri and F. Priolo “Role of the substrate doping in the activation of Fe2+ centers in Fe implanted InP” Mat.Res.Soc.Symp. Proc. 864, 2007 (2005)

5)            T.Cesca, A.Gasparotto, N.El Habra, A.Coati, B.Fraboni, F.Priolo, E.C.Moreira, G.Ciatto, C.Bocchi “Incorporation of highly concentrated iron impurities in InP by high temperature ion implantation” Mat.Res.Soc.Symp. Proc. 719, 297 (2002)

6)            P.Chirco, M.P.Morigi, M.Zanarini, A.Cavallini, B.Fraboni, N.Auricchio, E.Caroli, W.Dusi, P.Fougeres, M.Hage-Ali, P.Siffert “ Comparison of the radiation damage induced by thermal neutrons in CdTe and CdZnTe detectors” Proc.SPIE Vol.3768 p.424 (1999)

7)            A.Castaldini, A.Cavallini, B.Fraboni, P.Fernandez, J.Piqueras,”Analyses of compensation related defects in II-VIcompounds” Mat.Res.Soc.Symp. 487 269 (1998)

8)            W.Dusi, E.Caroli, P.Chirco, M.Zanarini, E.Querzola, M.Giacometti, A.Cavallini, B.Fraboni "Study of the radiation damage induced by high-energy gamma-rays in CdTe detectors" Mat.Res.Soc.Symp.487 377 (1998)

9)            A.Castaldini, A.Cavallini, B.Fraboni, P.Fernandez, J.Piqueras "Investigation of deep  energy levels in II-VI compounds" Mat.Res.Soc.Symp.442 605 (1997)

10)        C.Frigeri, A.Carnera, B.Fraboni, A.Gasparotto, F.Priolo, A.Camporese, G.Rossetto “Distribution of Fe and extended defects in Fe-implanted InP", Microscopy of Semiconducting Materials,Ser.No.157 523 (1997) Oxford, UK

11)        A.Castaldini, A.Cavallini, B.Fraboni, S.Binetti, M.Donghi, S.Pizzini,  G.Wagner "Optical and electrical characterization of deep traps in erbium doped silicon" Defect Recognition and Image Processing in Semiconductors, Ser. No.160 297 (1997) Berlin, Germany

12)        C.Frigeri, A.Carnera, B.Fraboni, A.Gasparotto, F.Priolo, A.Camporese, G.Rossetto "Influence of the dislocation loops on the anomalous difusion of Fe implanted into InP" Defects in Semiconductors ICDS19 258 1807 (1997)

13)        A.Carnera, B.Fraboni, A.Gasparotto, F.Priolo, A.Camporese, G.Rossetto, C.Frigeri, A.Cassa: "Dose and doping dependence of damage annealing in Fe MeV implanted InP" Mat.Res.Soc.Symp.396 829 (1996)

14)        A.Castaldini, A.Cavallini, B.Fraboni, J.Piqueras and L.Polenta: "Defect energy levels in Cd-based compounds" Defect Recognition and Image Processing in Semiconductors Ser.No 149 115 (1996)

15)        A.Castaldini, A.Cavallini, P.Fernandez, B.Fraboni, J.Piqueras and L.Polenta:"Electrical and optical properties of defects by complementary spectroscopies" Mat.Res.Soc.Symp.407 366 (1996)

16)        A.Castaldini, A.Cavallini, B.Fraboni, B.Mendez and J.Piqueras: "Influence of defects on diffusion length inhomogeneity in GaAs:Te wafers" Defect Recognition and Image Processing in Semiconductors, Ser. No.135 207 (1994)

17)        R.Blaikie, B.Fraboni, J.R.A.Cleaver and H.Ahmed: "A low temperature EBIC study of quantum wires fabricated in GaAs/AlGaAs heterostructures using ion-implanted gate" Microscopy of Semiconducting Materials Ser. No.134, 436 (1993), Oxford, UK

18)        R.Blaikie, K.Nakazato, B.Fraboni, D.Hasko, J.Cleaver and H.Ahmed: "Fabrication of quantum wires and point contacts in GaAs/AlGaAs heterostructures using Focused Ion Beam implanted gates", Microcircuit Engineering 1990, p.233,  Elsevier Publ. (1990)

 

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